KR970077337A - 스터퍼링후의 기판의 취급방법 및 스퍼터링장치 - Google Patents
스터퍼링후의 기판의 취급방법 및 스퍼터링장치 Download PDFInfo
- Publication number
- KR970077337A KR970077337A KR1019970019772A KR19970019772A KR970077337A KR 970077337 A KR970077337 A KR 970077337A KR 1019970019772 A KR1019970019772 A KR 1019970019772A KR 19970019772 A KR19970019772 A KR 19970019772A KR 970077337 A KR970077337 A KR 970077337A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- sputtering
- cooling stage
- sputtering apparatus
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (14)
- 진공중에 기판을 가열하면서 기판위에 박막을 퇴적시키고, 기판을 냉각 스테이지 위에 올려놓아 강제냉각하고, 기판이 소정온도 이하가 된 후에 기판을 대기압분위기로 되돌리는 것을 특징으로 하는 스퍼터링 후의 기판의 취급방법.
- 제1항에 있어서, 상기 소정온도는 100℃에서 150℃범위의 온도인 것을 특징으로 하는 스퍼터링 후의 기판의 취급방법.
- 진공펌프계를 갖추고 기판위에 스퍼터링에 의해 소정의 박막을 퇴적하는 스퍼터링챔버와, 상기 스퍼터링챔버에 배치되어 스퍼터링 중에 기판을 제1온도로 가열하는 가열수단과, 상기 스퍼터링 챔버에 인접하게 배치되는 한편 진공펌프계 및 벤트 가스 도입계를 갖춘 언로드 락 챔버와, 언로드 락 챔버 내에 배치되는 한편, 스퍼터링이 종료된 후 스퍼터링 챔버에서 반출된 기판과 면접촉을 함으로써 상기 기판을 제2온도까지 강제냉각시키는 냉각스테이지를 구비하는 것을 특징으로 하는 스퍼터링 장치.
- 제3항에 있어서, 상기 제2온도는 100℃에서 150℃범위의 온도인 것을 특징으로 하는 스퍼터링 장치.
- 제3항에 있어서, 상기 냉각스테이지 위에 면접촉하고 있는 기판의 온도를 비접촉방법으로 계측하는 비접촉온도계를 구비하는 것을 특징으로 하는 스퍼터링장치.
- 제3항에 있어서, 상기 언로드 락 챔버 안에는 스퍼터링이 종료한 소정수의 기판을 수용하는 기판카셋트가 배치되고, 스퍼터링 챔버에서 반출된 각 기판을 한장씩 냉각 스테이지에 올려놓은 후 이 기판을 냉각스테이지에서 기판카세트로 반송하여 수용할 수 있는 반송기구가 마련되어 있는 것을 특징으로 하는 스퍼터링장치.
- 제5항에 있어서, 상기 언로드 락 챔버 안에는 스퍼터링이 종료한 소정수의 기판을 수용하는 기판카셋트가 배치되고, 스퍼터링 챔버에서 반출된 각 기판을 한장씩 냉각 스테이지에 올려놓은 후 이 기판을 냉각스테이지에서 기판카세트로 반송하여 수용할 수 있는 반송기구가 마련되는 동시에 이 반송기구의 동작을 제어하는 제어부가 또한 마련되어 있으며, 이 제어부는 상기 비접촉온도계에 의한 기판온도의 계측결과에 따라 상기 냉각스테이지에서 상기 기판카세트로의 반송을 행하도록 당해 반송기구를 제어할 수 있는 것을 특징으로 하는 스퍼터링장치.
- 제6항에 있어서, 상기 반송기구의 동작을 제어하는 제어부를 가지며, 이 제어부는 상기 소정수에 도달할 때의 마지막 한장 또는 몇장의 기판에 대해서만 상기 냉각 스테이지로 올려놓은 동작을 행하도록 상기 반송기구를 제어하는 것을 특징으로 하는 스퍼터링장치.
- 제3항에 있어서, 상기 냉각스테이지는 정전기흡착에 의해 기판을 냉각스테이지의 표면에 흡착하는 정전흡착기구를 갖추고 있는 것을 특징으로 하는 스퍼터링장치.
- 제9항에 있어서, 상기 정전흡착기구는 상기 냉각스테이지의 기판 올려놓는면과 접촉되는 유전체블록과, 상기 유전체블록에 매설된 한쌍의 흡착전극과, 이 흡착전극에 전압을 인가하는 흡착전원을 구비하는 것을 특징으로 하는 스퍼터링장치.
- 제3항에 있어서, 상기 냉각스테이지는 냉각스테이지의 표면과 기판의 뒷면과의 접촉을 강화하는 클램프 기구를 갖추고 있는 것을 특징으로 하는 스퍼터링장치.
- 제11항에 있어서, 상기 클램프기구는 기판의 외측직경에 대응하는 치수를 갖는 고리모양의 클램퍼와, 이 클램퍼를 구동하는 구동기구를 갖추고 있는 것을 특징으로 하는 스퍼터링장치.
- 제3항에 있어서, 상기 냉각스테이지는 기판의 뒷면과 접촉하도록 냉각용 가스를 도입하는 냉각용 가스도입수단을 갖추고 있는 것을 특징으로 하는 스퍼터링장치.
- 제13항에 있어서, 상기 냉각용 가스도입수단은 냉각용 가스가 도입되는 홈을 갖추고 있으며, 이 홈은 상기 냉각스테이지의 상부면에 형성되는 것을 특징으로 하는 스퍼터링장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15004296A JP3852980B2 (ja) | 1996-05-21 | 1996-05-21 | 薄膜作成方法及びスパッタリング装置 |
| JP96-150042 | 1996-05-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970077337A true KR970077337A (ko) | 1997-12-12 |
| KR100270458B1 KR100270458B1 (ko) | 2000-12-01 |
Family
ID=15488239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970019772A Expired - Lifetime KR100270458B1 (ko) | 1996-05-21 | 1997-05-21 | 스터퍼링후의 기판의 취급방법 및 스퍼터링 장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6013162A (ko) |
| JP (1) | JP3852980B2 (ko) |
| KR (1) | KR100270458B1 (ko) |
| TW (1) | TW332307B (ko) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100303446B1 (ko) | 1998-10-29 | 2002-10-04 | 삼성전자 주식회사 | 액정표시장치용박막트랜지스터기판의제조방법 |
| JP2001185506A (ja) * | 1999-12-22 | 2001-07-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP4100466B2 (ja) * | 2000-12-25 | 2008-06-11 | 東京エレクトロン株式会社 | 液処理装置 |
| US6907742B2 (en) * | 2002-12-19 | 2005-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Apparatus and method for controlling wafer temperature |
| KR100576363B1 (ko) * | 2003-05-30 | 2006-05-03 | 삼성전자주식회사 | 인시투 화학기상증착 금속 공정 및 그에 사용되는화학기상증착 장비 |
| CN100536089C (zh) * | 2003-12-30 | 2009-09-02 | 中芯国际集成电路制造(上海)有限公司 | 晶圆快速冷却退火的方法和装置 |
| US20050183824A1 (en) * | 2004-02-25 | 2005-08-25 | Advanced Display Process Engineering Co., Ltd. | Apparatus for manufacturing flat-panel display |
| JP2005320590A (ja) * | 2004-05-10 | 2005-11-17 | National Institute For Materials Science | コンビナトリアル成膜方法とその装置 |
| US7170578B2 (en) * | 2004-11-30 | 2007-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern control system |
| JP2010090434A (ja) * | 2008-10-08 | 2010-04-22 | Renesas Technology Corp | 半導体集積回路装置の製造方法および半導体集積回路装置の製造装置 |
| CN102021521A (zh) * | 2009-09-09 | 2011-04-20 | 鸿富锦精密工业(深圳)有限公司 | 真空溅射装置 |
| TW201137145A (en) * | 2010-04-29 | 2011-11-01 | Hon Hai Prec Ind Co Ltd | Sputtering device |
| KR101620027B1 (ko) * | 2014-04-30 | 2016-05-12 | 주식회사 에스에프에이 | 박막 증착장치용 벤트챔버 |
| CN116724387A (zh) * | 2021-03-15 | 2023-09-08 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法以及程序 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4913790A (en) * | 1988-03-25 | 1990-04-03 | Tokyo Electron Limited | Treating method |
| JP2600399B2 (ja) * | 1989-10-23 | 1997-04-16 | 富士電機株式会社 | 半導体ウエーハ処理装置 |
| TW221318B (ko) * | 1990-07-31 | 1994-02-21 | Tokyo Electron Co Ltd | |
| JPH04141587A (ja) * | 1990-10-01 | 1992-05-15 | Nec Corp | スパッタリング装置 |
| US5267607A (en) * | 1991-05-28 | 1993-12-07 | Tokyo Electron Limited | Substrate processing apparatus |
| US5815396A (en) * | 1991-08-12 | 1998-09-29 | Hitachi, Ltd. | Vacuum processing device and film forming device and method using same |
| JPH05218176A (ja) * | 1992-02-07 | 1993-08-27 | Tokyo Electron Tohoku Kk | 熱処理方法及び被処理体の移載方法 |
| US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
-
1996
- 1996-05-21 JP JP15004296A patent/JP3852980B2/ja not_active Expired - Lifetime
-
1997
- 1997-05-20 TW TW086106744A patent/TW332307B/zh not_active IP Right Cessation
- 1997-05-21 KR KR1019970019772A patent/KR100270458B1/ko not_active Expired - Lifetime
- 1997-05-21 US US08/859,720 patent/US6013162A/en not_active Expired - Lifetime
-
1999
- 1999-11-10 US US09/437,227 patent/US6200432B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW332307B (en) | 1998-05-21 |
| KR100270458B1 (ko) | 2000-12-01 |
| JP3852980B2 (ja) | 2006-12-06 |
| JPH09310173A (ja) | 1997-12-02 |
| US6013162A (en) | 2000-01-11 |
| US6200432B1 (en) | 2001-03-13 |
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