KR970077339A - 스퍼터링장치 - Google Patents

스퍼터링장치 Download PDF

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KR970077339A
KR970077339A KR1019970019774A KR19970019774A KR970077339A KR 970077339 A KR970077339 A KR 970077339A KR 1019970019774 A KR1019970019774 A KR 1019970019774A KR 19970019774 A KR19970019774 A KR 19970019774A KR 970077339 A KR970077339 A KR 970077339A
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target
substrate
cathode
magnet
size
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KR1019970019774A
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KR100270460B1 (ko
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마사히코 고바야시
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니시히라 쥰지
아넬바 가부시기가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3327—Coating high aspect ratio workpieces

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

기판의 주변부분에 많이 보여지는 홀내 보톰커버렛지율의 한쪽으로 치우치는 것을 해소하고 고아스팩트비의 디바이스도 충분한 비율로 생산할 수 있도록 하는 것을 과제로 하며, 그 해결수단으로는 진공용기(1) 내에 같은 축상에 평행하게 대향시켜 타겟(5)과 기판(30)을 배치하여 기판(30)의 표면에 형성된 미세홀(301)의 내면에 박막을 퇴적시킨다. 타겟(5)은 미세홀(301)의 개구의 직경 A, 깊이를 B, 타겟(5)의 크기를 Dt, 기판(30)의 크기를 Ds, 타겟(5)과 기판(30)과의 거리를 L로 한 경우에 tanQ1=(Dt-Ds)/2L을 만족하는 각도 Q1과, tanQ2=A/B를 만족하는 각도 Q2와의 사이에서 Q1=N·Q2이며 N이 0.7 이상, 보다 바람직하게는 0.7 이상 1.2 이하가 되는 관계가 성립하는 크기 Dt를 갖게 한다.

Description

스퍼터링장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 제1도의 스퍼터링장치에서 타겟의 크기의 선정에 관해 설명하기 위한 도면이며 타겟의 크기 Dt, 기판의 크기 Ds, Ts 거리 L의 각 파라메터를 설명하는 모식도.

Claims (6)

  1. 배기계를 갖춘 진공용기와, 진공용기내에 배치됨과 동시에 앞면에 타겟을 갖춘 캐소우드와, 같은 축을 중심으로 상기 타겟과 평행하게 대향시켜 기판을 배치하기 위한 기판홀더를 구비한 스퍼터링장치로서, 상기 기판홀더의 표면에 형성된 홀의 내면에는 박막이 퇴적되어 있고, 박막을 퇴적시키는 홀의 개구의 직경 또는 폭을 A, 홀의 깊이를 B, 타겟의 크기를 Dt, 기판의 크기를 Ds, 타겟과 기판 사이의 거리를 L로 한 경우 상기 캐소우드의 타겟은 tan Q1=(Dt-Ds)/2L을 만족하는 각도 Q1과 tan Q2=A/B를 만족하는 각도 Q2사이에서 Q1=N·Q2, N은 0.7 이상되는 관계가 성립하는 크기 Dt를 갖는 것을 특징으로 하는 스퍼터링장치.
  2. 제1항에 있어서, 상기 캐소우드는 자석기구를 갖춘 마그네트론 캐소우드인 것을 특징으로 하는 스퍼터링장치.
  3. 제2항에 있어서, 상기 자석기구는 그 중심에 배치되는 중심자석과 상기 중심자석을 둘러싸는 고리모양의 주변자석과 상기 중심자석 및 주변자석을 지지하는 평판형 요크를 포함하는 것을 특징으로 하는 스퍼터링장치.
  4. 배기계를 갖춘 진공용기와, 진공용기내에 배치됨과 동시에 앞면에 타겟을 갖춘 캐소우드와, 같은 축을 중심으로 상기 타겟과 평행하게 대향시켜 기판을 배치하기 위한 기판홀더를 구비한 스퍼터링장치로서, 상기 기판홀더의 표면에 형성된 홀의 내면에는 박막이 퇴적되어 있고, 박막을 퇴적시키는 홀의 개구의 직경 또는 폭을 A, 홀의 깊이를 B, 타겟의 크기를 Dt, 기판의 크기를 Ds, 타겟과 기판 사이의 거리를 L로 한 경우 상기 캐소우드의 타겟은 tanQ1=(Dt-Ds)/2L을 만족하는 각도 Q1과 tanQ2=A/B를 만족하는 각도 Q2사이에서 Q1=N·Q2, N은 0.7 이상 또는 1.2 이하가 되는 관계가 성립하는 크기 Dt를 갖는 것을 특징으로 하는 스퍼터링장치.
  5. 제4항에 있어서, 상기 캐소우드는 자석기구를 갖춘 마그네트론 캐소우드인 것을 특징으로 하는 스퍼터링장치.
  6. 제5항에 있어서, 상기 자석기구는 그 중심에 배치되는 중심자석과 상기 중심자석을 둘러싸는 고리모양의 주변자석과 상기 중심자석 및 주변자석을 지지하는 평판형 요크를 포함하는 것을 특징으로 하는 스퍼터링장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970019774A 1996-05-21 1997-05-21 스퍼터링장치 Expired - Lifetime KR100270460B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15004496A JP3523962B2 (ja) 1996-05-21 1996-05-21 スパッタリング装置及びホール内へのスパッタリングによる薄膜作成方法
JP96-150044 1996-05-21

Publications (2)

Publication Number Publication Date
KR970077339A true KR970077339A (ko) 1997-12-12
KR100270460B1 KR100270460B1 (ko) 2000-12-01

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JP (1) JP3523962B2 (ko)
KR (1) KR100270460B1 (ko)
TW (1) TW332896B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3523962B2 (ja) * 1996-05-21 2004-04-26 アネルバ株式会社 スパッタリング装置及びホール内へのスパッタリングによる薄膜作成方法
US6342133B2 (en) * 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
JP4041396B2 (ja) 2000-08-11 2008-01-30 株式会社ルネサステクノロジ 半導体装置の製造方法
JP5248171B2 (ja) * 2008-04-03 2013-07-31 株式会社アルバック 貴金属膜の成膜装置及び貴金属膜の成膜方法
KR20110039920A (ko) * 2009-10-12 2011-04-20 삼성모바일디스플레이주식회사 스퍼터링 장치
TW201502302A (zh) * 2013-07-15 2015-01-16 Metal Ind Res & Dev Ct 可微調整製程參數之濺鍍製程控制系統及其方法
JP6122169B1 (ja) * 2016-03-15 2017-04-26 株式会社東芝 処理装置およびコリメータ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
KR900005785B1 (ko) * 1985-05-13 1990-08-11 닛뽄덴신덴와 가부시끼가이샤 평탄성 박막의 제조방법
EP0440377B1 (en) * 1990-01-29 1998-03-18 Varian Associates, Inc. Collimated deposition apparatus and method
US5232569A (en) * 1992-03-09 1993-08-03 Tulip Memory Systems, Inc. Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates
JP3523962B2 (ja) * 1996-05-21 2004-04-26 アネルバ株式会社 スパッタリング装置及びホール内へのスパッタリングによる薄膜作成方法

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US6071390A (en) 2000-06-06
US6248223B1 (en) 2001-06-19
KR100270460B1 (ko) 2000-12-01
TW332896B (en) 1998-06-01
JP3523962B2 (ja) 2004-04-26
JPH09312272A (ja) 1997-12-02

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