KR970077376A - Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process - Google Patents

Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process Download PDF

Info

Publication number
KR970077376A
KR970077376A KR1019960014214A KR19960014214A KR970077376A KR 970077376 A KR970077376 A KR 970077376A KR 1019960014214 A KR1019960014214 A KR 1019960014214A KR 19960014214 A KR19960014214 A KR 19960014214A KR 970077376 A KR970077376 A KR 970077376A
Authority
KR
South Korea
Prior art keywords
cleaning
water
ozone
hydrofluoric acid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019960014214A
Other languages
Korean (ko)
Inventor
전형탁
Original Assignee
전형탁
안태항
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전형탁, 안태항 filed Critical 전형탁
Priority to KR1019960014214A priority Critical patent/KR970077376A/en
Publication of KR970077376A publication Critical patent/KR970077376A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 세정 기술에 가장 널리 쓰이고 있는 습식 세정 기술 중 O3(오존)을 불어 넣은 DI water(탈이온수)와 HF(불산)용액을 사용한 세정 방법이다. 본 발명의 기술을 요약하면 다음과 같다. 먼저 전처리로서 Si(실리콘)기판위의 유기 오염물과 자연 산화막을 제거하기 위해 piranha 세정(H2SO4(황산)+H2O2(과산화수소수), 비율 4:1, 시간 10분, 온도 120℃)과 HF(불산) 세정(HF(불산)+H2O, 비율 1:100, 세정 시간 5분, 상온)을 하였다. 그리고 위와 같이 진처리된 시편을 1ppm CuSO4(황산 구리)표준 용액에 담궈 인위적으로 Cu(구리)를 금속 불순물로서 기판 위에 오염시켰으며 이 오염된 시편들은 O3(오존)을 불어넣은 DI water 세정(오존 첨가 초순수, 오존 농도 2.0ppm 이상)과 HF(불산) 용액 세정(HF(불산)+H2O, 비율 1:100, 세정시간 5분)의 여러가지 조합 및 반복 처리되어 Cu(구리)금속 불순물의 제거 효과와 그에 따른 Si(실리콘)기판 표면의 거칠기를 알아 보았다. 본 발명은 반도체 생산 세정 공정 중 기존 습식 세정 방법에 쉽게 적용될 수 있도록 하기 위하여 DI water(탈이온수)나 HF(불산)용액 같이 기존의 가장 많이 쓰이는 용액들을 바탕으로 하고 그 용액에 O3(오존)을 첨가하여 세정 효과를 증대시키며 또 그 두가지 용액을 적절히 조합 및 반복 실험함으로써 금속 불순물 제거와 기판의 표면 거칠기에 상당히 효과적인 세정 방법임을 보여 준 것이다. 구체적으로 위의 실험 방법들에 의해 세정된 결과 오염된 구리 불순물은 1013에서 1010atoms/㎠수준으로 크게 감소되었고 그 표면의 거칠기도 2배가량 향상된 결과를 얻었다.The present invention is a cleaning method using DI water (deionized water) and HF (hydrofluoric acid) solution blowing O 3 (ozone) among wet cleaning technologies most widely used in semiconductor cleaning technology. A summary of the technique of the present invention is as follows. First, as a pretreatment, piranha cleaning (H 2 SO 4 (sulfuric acid) + H 2 O 2 (hydrogen peroxide solution), ratio 4: 1, time 10 minutes, temperature 120 (HF (hydrofluoric acid) + H 2 O, ratio 1: 100, cleaning time 5 minutes, room temperature). Then, the specimen treated as above was immersed in 1 ppm CuSO 4 (copper sulfate) standard solution to contaminate Cu (copper) as metal impurities on the substrate. The contaminated specimens were washed with DI water (O 3 ) (HF (fluoric acid) + H 2 O, ratio 1: 100, cleaning time 5 minutes) and Cu (copper) metal The effect of removing impurities and the roughness of the Si (silicon) substrate surface were investigated. The present invention is based on the most commonly used solutions, such as DI water (deionized water) or HF (hydrofluoric acid) solution, in order to be easily applied to a conventional wet cleaning method during the semiconductor production cleaning process, and O 3 (ozone) To increase the cleaning effect and to appropriately combine and repeatedly test the two solutions to show that it is a cleaning method which is effective for the removal of metal impurities and the surface roughness of the substrate. As a result, the contaminated copper impurities were greatly reduced to the level of 10 13 to 10 10 atoms / ㎠ and the roughness of the surface was doubled.

Description

반도체 소자 세정 공정 중 오존 첨가 탈이온 초순수와 불산 용액을 이용한 세정 방법Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명 실시예에 대한 전체 개략도.BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a general schematic view of an embodiment of the present invention.

Claims (4)

Si(실리콘)기판 표면 세정 방법에 있어서, Ozonized DI water(오존 첨가 초순수)와 HF(불산)용액에 의한 기판 세정을 특징으로 하는 방법.A method for cleaning a surface of a silicon (Si) substrate characterized by cleaning the substrate with an Ozonized DI water (ozone-added deionized water) and an HF (hydrofluoric acid) solution. 제1항에 있어서, Ozonized DI water(오존 첨가 초순수)는 초순수 탱크로부터 나온 사용 시점의 초순수에 O3(오존)을 주입시켜 만든 용액으로서 오존의 농도는 2.0∼5.0ppm.The ozonized DI water according to claim 1, wherein the ozonized DI water is a solution prepared by injecting O 3 (ozone) into ultrapure water from the ultrapure water tank at the time of use, the concentration of ozone being 2.0 to 5.0 ppm. 제1항에 있어서, Ozonized DI water(오존 첨가 초순수)와 HF(불산)용액을 조합하여 실험한 후 금속 불순물이 1013에서 1010atoms/㎠로 현저하게 감소하였고, 반복 실험 후 그 금속 불순물량이 2∼5배 향상된 결과.The method according to claim 1, wherein the metal impurities are significantly reduced from 10 13 to 10 10 atoms / cm 2 after the combination of Ozonized DI water (H 2 O) and HF (H 2 O) 2-5 times better results. 제1항에 있어서, Ozonized DI water(오존 첨가 초순수)와 HF(불산)용액을 조합하여 실험한 후 RMS(제곱 평방 평방근)값과 Ra(평균)값에서 보는 것처럼 Si(실리콘)기판의 표면 거칠기가 거의 2배 가량 향상되었고, 반복 실험한 후의 표면 거칠기는 2배 가량 향상된 값과 비슷한 수준인 결과.The method according to claim 1, wherein the surface roughness of the Si (silicon) substrate is measured as RMS (square root mean square) value and Ra (mean) value after the combination of Ozonized DI water and HF And the surface roughness after the repeated experiment is about twice as high as that of the surface roughness improved by about 2 times. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960014214A 1996-05-02 1996-05-02 Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process Ceased KR970077376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960014214A KR970077376A (en) 1996-05-02 1996-05-02 Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960014214A KR970077376A (en) 1996-05-02 1996-05-02 Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process

Publications (1)

Publication Number Publication Date
KR970077376A true KR970077376A (en) 1997-12-12

Family

ID=66216876

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014214A Ceased KR970077376A (en) 1996-05-02 1996-05-02 Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process

Country Status (1)

Country Link
KR (1) KR970077376A (en)

Similar Documents

Publication Publication Date Title
US5810940A (en) Method for cleaning semiconductor wafers
US5714203A (en) Procedure for the drying of silicon
US5954885A (en) Cleaning method
US6431186B1 (en) Method of cleaning electronic components
KR960026336A (en) Method for Cleaning Hydrophobic Silicon Wafers
KR970060426A (en) Cleaning solution and cleaning method
KR940016526A (en) Semiconductor Cleaning Method and Cleaning Solution
JP3325739B2 (en) Silicon wafer cleaning method
JP3857314B2 (en) Silicon drying method
KR970077376A (en) Cleaning method using ozone-deionized ultra-pure water and hydrofluoric acid solution during semiconductor element cleaning process
US6495099B1 (en) Wet processing methods for the manufacture of electronic components
KR970003582A (en) Semiconductor Wafer Cleaning Method
KR100199376B1 (en) Cleaning device and wafer cleaning method using the same
JPS5830135A (en) Method of cleaning semiconductor wafer
Aoki et al. Wafer treatment using electrolysis-ionized water
KR100228372B1 (en) Wafer cleaning apparatus
JPH0750281A (en) Silicon wafer cleaning method
KR950001950A (en) Oxide film formation method by hydrophilization of wafer
KR970003576A (en) Wafer cleaning method
KR970000420B1 (en) Method of Cleaning Semiconductor Wafers
KR940008005A (en) Semiconductor Wafer Cleaning Method
Gupta surface microroughening is examined. The effect of adding small amounts
KR970000699B1 (en) Impurity Wet Cleaning Method on Silicon Substrate Surface Using Reaction Rate Limit
KR970003584A (en) Cleaning Method of Semiconductor Substrate
KR20010021793A (en) Method for washing silicon wafer

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000