KR970077400A - 금 합금 와이어 및 범프 제조 방법 - Google Patents

금 합금 와이어 및 범프 제조 방법 Download PDF

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KR970077400A
KR970077400A KR1019970020964A KR19970020964A KR970077400A KR 970077400 A KR970077400 A KR 970077400A KR 1019970020964 A KR1019970020964 A KR 1019970020964A KR 19970020964 A KR19970020964 A KR 19970020964A KR 970077400 A KR970077400 A KR 970077400A
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히데유끼 아끼모또
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사또 게이찌
다나까 덴시 고교 가부시끼가이샤
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
    • B23K35/3013—Au as the principal constituent
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    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10W72/01—Manufacture or treatment
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    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
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    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
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    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
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Abstract

중량 퍼센트를 Pd : 0.2 내지 5.0% 및 중량 퍼센트 Bi : 1 내지 100ppm이 중량 퍼센트로 적어도 99.99%인 순도를 가지는 금에 첨가되는 금 합금 와이어, 바람직하게는, 이트륨(Y), 랜서늄(La), 칼슘(Ca) 및 베릴륨(Be)으로 구성되는 군으로부터 선택되는 적어도 하나의 원소가 중량 퍼센트로 3 내지 250ppm의 양으로 상기 금에 추가적으로 첨가된다. 상기 금 합금 와이어는 금 합금 범프를 형성하는데 적합하다.

Description

금 합금 와이어 및 범프 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 제1c도의 범프 부분 확대도이다.

Claims (22)

  1. 중량 퍼센트로 Pd : 0.2 내지 5.0% 및 중량 퍼센트로 Bi : 1 내지 100ppm이 중량 퍼센트로 적어도 99.99%인 순도를 가지는 금에 첨가되는 것을 특징으로 하는 금 합금 와이어.
  2. 제1항에 있어서, 상기 금의 상기 순도가 적어도 중량 퍼센트로 99.999%인 것을 특징으로 하는 금 합금 와이어.
  3. 제1항에 있어서, Pd의 상기 양이 0.5 내지 5.0% 범위내에 있는 것을 특징으로 하는 금 합금 와이어.
  4. 제1항에 있어서, Bi의 상기 양이 1 내지 40ppm의 범위내에 있는 것을 특징으로 하는 금 합금 와이어.
  5. 제1항에 있어서, 이트륨(Y), 랜서늄(La), 칼슘(Ca) 및 베릴륨(Be)으로 구성되는 군으로부터 선택되는 적어도 하나의 원소가 중량 퍼센트로 3 내지 250ppm의 양으로 상기 금에 추가적으로 첨가되는 것을 특징으로 하는 금 합금 와이어.
  6. 제5항에 있어서, 상기 적어도 하나의 원소의 상기 양이 3 내지 70ppm인 것을 특징으로 하는 금 합금 와이어.
  7. 제5항에 있어서, 이트륨(Y), 랜서늄(La), 칼슘(Ca) 및 베릴륨(Be)으로 구성되는 군으로부터 적어도 세개의 원소가 상기 금에 첨가되는 것을 특징으로 하는 금 합금 와이어.
  8. 제5항에 있어서, 이트륨(Y), 랜서늄(La), 칼슘(Ca)의 적어도 세개의 원소가 상기 금에 첨가되는 것을 특징으로 하는 금 합금 와이어.
  9. 제1항에 있어서, 상기 와이어는 범프를 형성하기에 특히 적합한 것을 특징으로 하는 금 합금 와이어.
  10. 제1항에 있어서, 상기 와이어는 와이어 본딩에 특히 적합한 것을 특징으로 하는 금 합금 와이어.
  11. 모세관을 통과하는 금 합금 와이어 선단에 볼을 형성하는 단계; 상기 모세관을 하강시켜 상기 볼을 IC 칩의 전극에 가압 본딩하는 단계; 및 상기 금 합금 와이어를 상방으로 잡아당겨 상기 전극에 본딩된 상기 볼로부터 상기 금 합금 와이어를 파단시키므로써, 상기 IC 칩의 상기 전극위에 금 합금 범프를 형성시키는 단계로 이루어지고, 상기 금 합금 와이어는, 중량 퍼센트로 Pd : 0.2 내지 5.0% 및 중량 퍼센트로 Bi : 1 내지 100ppm이 중량 퍼센트로 적어도 99.99%인 순도를 가지는 금에 첨가된 조성을 가지는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  12. 제11항에 있어서, 상기 금의 상기 순도가 중량 퍼센트로 99.999%인 것을 특징으로 하는 금 합금 범프의 형성 방법.
  13. 제11항에 있어서, Pd의 상기 양이 중량 퍼센트로 0.5 내지 5.0%의 범위내에 있는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  14. 제11항에 있어서, 이트륨(Y), 랜서늄(La), 칼슘(Ca) 및 베릴륨(Be)으로 구성되는 군으로부터 선택되는 적어도 하나의 원소가 중량 퍼센트로 3 내지 250ppm의 양으로 상기 금에 추가적으로 첨가되는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  15. 제14항에 있어서, 이트륨(Y), 랜서늄(La) 및 칼슘(Ca)의 적어도 세개의 원소가 상기 금에 첨가되는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  16. 모세관을 통과하는 금 합금 와이어 선단에 볼을 형성하는 단계; 상기 모세관을 하강시켜 상기 볼을 IC 칩의 전극에 가압 본딩하는 단계; 상기 볼 위의 상기 금 합금 와이어에 노치를 만드는 단계; 및 상기 금 합금 와이어를 상방으로 잡아당겨 상기 전극에 본딩된 상기 볼로부터 상기 금 합금 와이어를 파단시키므로써, 상기 IC 칩의 상기 전극 위에 금 합금 범프를 형성시키는 단계로 이루어지고, 상기 금 합금 와이어는, 중량 퍼센트로 Pd : 0.2 내지 5.0% 및 중량 퍼센트로 Bi : 1 내지 100ppm이 중량 퍼센트로 적어도 99.99%인 순도를 가지는 금에 첨가된 조성을 가지는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  17. 제16항에 있어서, 상기 금의 상기 순도가 중량 퍼센트로 99.999%인 것을 특징으로 하는 금 합금 범프의 형성 방법.
  18. 제16항에 있어서, Pd의 상기 양이 중량 퍼센트로 0.5 내지 5.0%의 범위내에 있는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  19. 제16항에 있어서, 이트륨(Y), 랜서늄(La), 칼슘(Ca) 및 베릴륨(Be)으로 구성되는 군으로부터 선택되는 적어도 하나의 원소가 중량 퍼센트로 3 내지 250ppm의 양으로 상기 금에 추가적으로 첨가되는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  20. 제19항에 있어서, 이트륨(Y), 랜서늄(La) 및 칼슘(Ca)의 적어도 세개의 원소가 상기 금에 첨가되는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  21. 사용되는 와이어가 중량 퍼센트로 Pd : 0.2 내지 5.0% 및 중량 퍼센트로 Bi : 1 내지 100ppm이 중량 퍼센트로 적어도 99.99%인 순도를 가지는 금에 첨가되는 조성을 가지는 것을 특징으로 하는 금 합금 범프의 형성 방법.
  22. 제21항에 있어서, 이트륨(Y), 랜서늄(La), 칼슘(Ca) 및 베릴륨(Be)으로 구성되는 군으로부터 선택되는 적어도 하나의 원소가 중량 퍼센트로 3 내지 250ppm의 양으로 상기 금에 추가적으로 첨가되는 것을 특징으로 하는 금 합금 범프의 형성 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970020964A 1996-05-28 1997-05-27 금 합금 와이어 및 금 합금 범프의 형성 방법 Expired - Fee Related KR100275001B1 (ko)

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JP13354696A JP3328135B2 (ja) 1996-05-28 1996-05-28 バンプ形成用金合金線及びバンプ形成方法
JP133546/1996 1996-05-28

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Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
DE19809081A1 (de) * 1998-03-04 1999-09-16 Bosch Gmbh Robert Verfahren und Kontaktstelle zur Herstellung einer elektrischen Verbindung
JP3382918B2 (ja) * 2000-05-31 2003-03-04 田中電子工業株式会社 半導体素子接続用金線
US6523255B2 (en) * 2001-06-21 2003-02-25 International Business Machines Corporation Process and structure to repair damaged probes mounted on a space transformer
US6500760B1 (en) 2001-08-02 2002-12-31 Sandia Corporation Gold-based electrical interconnections for microelectronic devices
US6858943B1 (en) 2003-03-25 2005-02-22 Sandia Corporation Release resistant electrical interconnections for MEMS devices
JP3994113B2 (ja) * 2004-09-30 2007-10-17 田中電子工業株式会社 ワイヤバンプ
KR100899322B1 (ko) * 2004-09-30 2009-05-27 타나카 덴시 코오교오 카부시키가이샤 Ａｕ 합금 본딩·와이어
US8440137B2 (en) * 2004-11-26 2013-05-14 Tanaka Denshi Kogyo K.K. Au bonding wire for semiconductor device
US7595560B2 (en) * 2005-02-22 2009-09-29 Nec Electronics Corporation Semiconductor device
US8193034B2 (en) 2006-11-10 2012-06-05 Stats Chippac, Ltd. Semiconductor device and method of forming vertical interconnect structure using stud bumps
US8174119B2 (en) 2006-11-10 2012-05-08 Stats Chippac, Ltd. Semiconductor package with embedded die
US8133762B2 (en) 2009-03-17 2012-03-13 Stats Chippac, Ltd. Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core
JP4195495B1 (ja) * 2007-11-06 2008-12-10 田中電子工業株式会社 ボールボンディング用金合金線
JP2010123817A (ja) * 2008-11-21 2010-06-03 Fujitsu Ltd ワイヤボンディング方法および電子装置とその製造方法
US8540136B1 (en) 2012-09-06 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for stud bump formation and apparatus for performing the same
WO2017151737A1 (en) * 2016-03-03 2017-09-08 H.C. Starck Inc. Fabricaton of metallic parts by additive manufacturing
CN116329830B (zh) * 2023-05-29 2023-08-29 宁波尚进自动化科技有限公司 芯片引脚的焊接方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649535A (en) * 1979-09-28 1981-05-06 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor device
US4330329A (en) * 1979-11-28 1982-05-18 Tanaka Denshi Kogyo Kabushiki Kaisha Gold bonding wire for semiconductor elements and the semiconductor element
GB2116208B (en) * 1981-12-04 1985-12-04 Mitsubishi Metal Corp Fine gold alloy wire for bonding of a semiconductor device
US4702302A (en) * 1983-02-23 1987-10-27 Sumitomo Electric Industries Ltd. Method of making thin alloy wire
JPS6152961A (ja) * 1984-08-22 1986-03-15 Sumitomo Electric Ind Ltd 金合金線の製造方法
JPS59208751A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd バンプ形成方法
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
JPS62152143A (ja) * 1985-12-26 1987-07-07 Toshiba Corp バンプ形成方法
JPS63145729A (ja) * 1986-03-28 1988-06-17 Nittetsu Micro Metal:Kk 半導体素子ボンデイング用金線
JP2737953B2 (ja) * 1988-09-29 1998-04-08 三菱マテリアル株式会社 金バンプ用金合金細線
JPH02152143A (ja) 1988-12-02 1990-06-12 Toshiba Corp Ｘ線イメージ管及びその製造方法
GB2231336B (en) * 1989-04-28 1993-09-22 Tanaka Electronics Ind Gold wire for the bonding of a semiconductor device
US5139883A (en) * 1989-05-09 1992-08-18 Grigory Raykhtsaum Intermetallic time-temperature integration fuse
JPH03145729A (ja) 1989-10-31 1991-06-20 Sony Corp 半導体装置の製造方法
JPH082623B2 (ja) 1990-08-23 1996-01-17 ソマール株式会社 超高分子量ポリエチレン複合シート及びその製造方法
JP3145729B2 (ja) 1991-05-28 2001-03-12 チノン株式会社 多点測距装置
JP3064692B2 (ja) * 1992-09-30 2000-07-12 田中電子工業株式会社 半導体素子用ボンディング線
JPH06112251A (ja) * 1992-09-30 1994-04-22 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JP3090549B2 (ja) * 1992-09-30 2000-09-25 田中電子工業株式会社 半導体素子用ボンディング線
JP2780611B2 (ja) * 1993-09-06 1998-07-30 三菱マテリアル株式会社 少量成分の合金化で硬質化した金装飾品材
JP3221179B2 (ja) * 1993-09-06 2001-10-22 三菱マテリアル株式会社 硬さ安定性のすぐれた金装飾品用高硬度伸線加工ワイヤー材
US5884398A (en) * 1993-11-16 1999-03-23 Form Factor, Inc. Mounting spring elements on semiconductor devices
JP3085090B2 (ja) * 1994-06-07 2000-09-04 住友金属鉱山株式会社 ボンディングワイヤ
JPH08109424A (ja) * 1994-08-18 1996-04-30 Tanaka Denshi Kogyo Kk ボンディング用金線
JPH08127828A (ja) * 1994-10-28 1996-05-21 Tanaka Denshi Kogyo Kk ボンディング用金線
JPH08193233A (ja) * 1995-01-12 1996-07-30 Mitsubishi Materials Corp 半導体装置用金合金細線
JPH08325657A (ja) * 1995-05-26 1996-12-10 Tanaka Denshi Kogyo Kk ボンディング用金線
JP3585993B2 (ja) * 1995-05-26 2004-11-10 田中電子工業株式会社 ボンディング用金線
JP3367544B2 (ja) * 1995-08-23 2003-01-14 田中電子工業株式会社 ボンディング用金合金細線及びその製造方法
JP3222054B2 (ja) 1996-02-06 2001-10-22 信越化学工業株式会社 ゴム組成物

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JPH09321076A (ja) 1997-12-12
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CN1065001C (zh) 2001-04-25
KR100275001B1 (ko) 2001-01-15
EP0810293B1 (en) 2001-10-24
US6213382B1 (en) 2001-04-10
DE69707559T2 (de) 2002-05-16
TW327697B (en) 1998-03-01
US6159420A (en) 2000-12-12
CN1173546A (zh) 1998-02-18
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