LU91987B1 - Method for manufacturing a semiconductor thin film - Google Patents

Method for manufacturing a semiconductor thin film

Info

Publication number
LU91987B1
LU91987B1 LU91987A LU91987A LU91987B1 LU 91987 B1 LU91987 B1 LU 91987B1 LU 91987 A LU91987 A LU 91987A LU 91987 A LU91987 A LU 91987A LU 91987 B1 LU91987 B1 LU 91987B1
Authority
LU
Luxembourg
Prior art keywords
manufacturing
thin film
semiconductor thin
semiconductor
film
Prior art date
Application number
LU91987A
Inventor
Alex Redinger
Marina Mousel
Susanne Siebentritt
Original Assignee
Univ Luxembourg
Tdk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Luxembourg, Tdk Corp filed Critical Univ Luxembourg
Priority to LU91987A priority Critical patent/LU91987B1/en
Priority to PCT/EP2013/058509 priority patent/WO2013160356A1/en
Application granted granted Critical
Publication of LU91987B1 publication Critical patent/LU91987B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
LU91987A 2012-04-26 2012-04-26 Method for manufacturing a semiconductor thin film LU91987B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
LU91987A LU91987B1 (en) 2012-04-26 2012-04-26 Method for manufacturing a semiconductor thin film
PCT/EP2013/058509 WO2013160356A1 (en) 2012-04-26 2013-04-24 Method for manufacturing a semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
LU91987A LU91987B1 (en) 2012-04-26 2012-04-26 Method for manufacturing a semiconductor thin film

Publications (1)

Publication Number Publication Date
LU91987B1 true LU91987B1 (en) 2013-10-28

Family

ID=48236908

Family Applications (1)

Application Number Title Priority Date Filing Date
LU91987A LU91987B1 (en) 2012-04-26 2012-04-26 Method for manufacturing a semiconductor thin film

Country Status (2)

Country Link
LU (1) LU91987B1 (en)
WO (1) WO2013160356A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10079321B2 (en) * 2016-06-30 2018-09-18 International Business Machines Corporation Technique for achieving large-grain Ag2ZnSn(S,Se)4thin films
CN106960906B (en) * 2017-02-24 2019-02-19 江苏理工学院 A kind of Cu-Sn-Se nanometer phase change thin film material and its preparation method and use

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
BÃR M ET AL: "Impact of KCN etching on the chemical and electronic surface structure of CuZnSnSthin-film solar cell absorbers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 99, no. 15, 10 October 2011 (2011-10-10), pages 152111 - 152111, XP012152471, ISSN: 0003-6951, [retrieved on 20111013], DOI: 10.1063/1.3650717 *
BJÖRN-ARVID SCHUBERT ET AL: "Cu2ZnSnS4 thin film solar cells by fast coevaporation", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS, vol. 19, no. 1, 1 January 2011 (2011-01-01), pages 93 - 96, XP055001284, ISSN: 1062-7995, DOI: 10.1002/pip.976 *
HIRONORI KATAGIRI ET AL: "Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique", APPLIED PHYSICS EXPRESS, THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 1, no. 4, 1 April 2008 (2008-04-01), pages 41201 - 1, XP001517129, ISSN: 1882-0778, DOI: 10.1143/APEX.1.041201 *
PRASHANT K SARSWAT ET AL: "CZTS thin films on transparent conducting electrodes by electrochemical technique", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 520, no. 6, 21 July 2011 (2011-07-21), pages 1694 - 1697, XP028444220, ISSN: 0040-6090, [retrieved on 20110729], DOI: 10.1016/J.TSF.2011.07.052 *
SCRAGG J J ET AL: "A 3.2% efficient Kesterite device from electrodeposited stacked elemental layers", JOURNAL OF ELECTROANALYTICAL CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 646, no. 1-2, 15 July 2010 (2010-07-15), pages 52 - 59, XP027141897, ISSN: 1572-6657, [retrieved on 20100118] *
WANGPERAWONG A ET AL: "Aqueous bath process for deposition of CuZnSnSphotovoltaic absorbers", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 519, no. 8, 24 November 2010 (2010-11-24), pages 2488 - 2492, XP028132120, ISSN: 0040-6090, [retrieved on 20101204], DOI: 10.1016/J.TSF.2010.11.040 *

Also Published As

Publication number Publication date
WO2013160356A1 (en) 2013-10-31

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