MA20423A1 - Dispositif semi-conducteur . - Google Patents

Dispositif semi-conducteur .

Info

Publication number: MA20423A1
Authority: MA; Morocco
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1984-05-02

Application number

MA20647A

Other languages

English (en)

Original Assignee

Alcatel Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-05-02

Filing date

1985-05-02

Publication date

1985-12-31

1985-05-02 Application filed by Alcatel Nv filed Critical Alcatel Nv

1985-12-31 Publication of MA20423A1 publication Critical patent/MA20423A1/fr

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
- H10D18/65—Gate-turn-off devices with turn-off by field effect
- H10D18/655—Gate-turn-off devices with turn-off by field effect produced by insulated gate structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs

MA20647A 1984-05-02 1985-05-02 Dispositif semi-conducteur . MA20423A1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
EP84200608		1984-05-02

Publications (1)

Publication Number	Publication Date
MA20423A1 true MA20423A1 (fr)	1985-12-31

Family

ID=8192437

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
MA20647A MA20423A1 (fr)	1984-05-02	1985-05-02	Dispositif semi-conducteur .

Country Status (11)

Country	Link
US (1)	US4779125A (fr)
EP (1)	EP0210173B1 (fr)
JP (1)	JPS62501111A (fr)
BE (1)	BE903709A (fr)
BR (1)	BR8507182A (fr)
DE (1)	DE3579235D1 (fr)
HU (1)	HUT42204A (fr)
MA (1)	MA20423A1 (fr)
PT (1)	PT80385A (fr)
WO (1)	WO1985005224A1 (fr)
ZA (1)	ZA853266B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5241210A (en) *	1987-02-26	1993-08-31	Kabushiki Kaisha Toshiba	High breakdown voltage semiconductor device
US5438220A (en) *	1987-02-26	1995-08-01	Kabushiki Kaisha Toshiba	High breakdown voltage semiconductor device
SE468731B (sv) *	1991-07-17	1993-03-08	Asea Brown Boveri	Slaeckbart tyristorsystem
GB2267996B (en) *	1992-06-01	1996-04-17	Fuji Electric Co Ltd	Semiconductor device
JPH07297409A (ja) *	1994-03-02	1995-11-10	Toyota Motor Corp	電界効果型半導体装置
JP6255421B2 (ja) *	2013-01-30	2017-12-27	マイクロチップテクノロジーインコーポレイテッドＭｉｃｒｏｃｈｉｐＴｅｃｈｎｏｌｏｇｙＩｎｃｏｒｐｏｒａｔｅｄ	Ｅｓｄ自己保護を有するｄｍｏｓ半導体デバイスおよびそれを備えたｌｉｎバスドライバ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR897772A (fr) *	1938-12-01	1945-03-30	Ig Farbenindustrie Ag	Procédé pour dédoubler des hydrocarbures huileux ou pour hydrogéner sous pression des charbons, goudrons ou huiles minérales
US3394037A (en) *	1965-05-28	1968-07-23	Motorola Inc	Method of making a semiconductor device by masking and diffusion
SE392783B (sv) *	1975-06-19	1977-04-18	Asea Ab	Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4115797A (en) *	1976-10-04	1978-09-19	Fairchild Camera And Instrument Corporation	Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
JPS5478092A (en) *	1977-12-05	1979-06-21	Hitachi Ltd	Lateral semiconductor device
US4199774A (en) *	1978-09-18	1980-04-22	The Board Of Trustees Of The Leland Stanford Junior University	Monolithic semiconductor switching device
US4586073A (en) *	1978-12-20	1986-04-29	At&T Bell Laboratories	High voltage junction solid-state switch
US4213067A (en) *	1978-12-22	1980-07-15	Eaton Corporation	Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path
IE55992B1 (en) *	1982-04-05	1991-03-13	Gen Electric	Insulated gate rectifier with improved current-carrying capability
EP0091686B1 (fr) *	1982-04-12	1989-06-28	General Electric Company	Dispositif semi-conducteur ayant une région diffusée à longueur réduite et procédé pour la fabrication de la région
US4574209A (en) *	1982-06-21	1986-03-04	Eaton Corporation	Split gate EFET and circuitry
US4443931A (en) *	1982-06-28	1984-04-24	General Electric Company	Method of fabricating a semiconductor device with a base region having a deep portion
JPS59105354A (ja) *	1982-12-09	1984-06-18	Toshiba Corp	半導体装置
EP0273030A3 (fr) *	1982-12-13	1988-09-21	General Electric Company	Redresseurs latéraux à porte isolée
SE435436B (sv) *	1983-02-16	1984-09-24	Asea Ab	Tvapoligt overstromsskydd
JPS59184560A (ja) *	1983-03-31	1984-10-19	インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション	半導体接点構造体
BE897772A (fr) *	1983-09-19	1984-03-19	Itt Ind Belgium	Contacts electroniques et dispositifs associes

1985
- 1985-05-01 ZA ZA853266A patent/ZA853266B/xx unknown
- 1985-05-01 US US06/819,089 patent/US4779125A/en not_active Expired - Fee Related
- 1985-05-01 JP JP60502148A patent/JPS62501111A/ja active Pending
- 1985-05-01 EP EP85902502A patent/EP0210173B1/fr not_active Expired - Lifetime
- 1985-05-01 DE DE8585902502T patent/DE3579235D1/de not_active Expired - Lifetime
- 1985-05-01 BR BR8507182A patent/BR8507182A/pt unknown
- 1985-05-01 WO PCT/EP1985/000193 patent/WO1985005224A1/fr not_active Ceased
- 1985-05-01 HU HU852876A patent/HUT42204A/hu unknown
- 1985-05-02 MA MA20647A patent/MA20423A1/fr unknown
- 1985-05-02 PT PT80385A patent/PT80385A/pt not_active IP Right Cessation
- 1985-11-26 BE BE2/60853A patent/BE903709A/nl not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPS62501111A (ja)	1987-04-30
US4779125A (en)	1988-10-18
HUT42204A (en)	1987-06-29
BR8507182A (pt)	1987-04-22
DE3579235D1 (de)	1990-09-20
ZA853266B (en)	1985-12-24
EP0210173B1 (fr)	1990-08-16
WO1985005224A1 (fr)	1985-11-21
BE903709A (nl)	1986-05-26
PT80385A (en)	1985-06-01
EP0210173A1 (fr)	1987-02-04

Publication	Publication Date	Title
DE3650012D1 (de)	1994-09-08	Halbleitervorrichtung.
DE3584702D1 (de)	1992-01-02	Halbleiterlaservorrichtung.
DE3584330D1 (de)	1991-11-14	Halbleiterlaservorrichtung.
NL189326C (nl)	1993-03-01	Halfgeleiderinrichting.
DE3850855D1 (de)	1994-09-01	Halbleitervorrichtung.
DE3576433D1 (de)	1990-04-12	Halbleiterspeichervorrichtung.
DE3763336D1 (de)	1990-07-26	Tragevorrichtung.
DE3584189D1 (de)	1991-10-31	Halbleiterspeichergeraet.
DE3581773D1 (de)	1991-03-28	Halbleiterspeichervorrichtung.
DE3584799D1 (de)	1992-01-16	Halbleitervorrichtung.
DE3587748D1 (de)	1994-03-24	Halbleiterlaseranordnung.
DE3575498D1 (de)	1990-02-22	Halbleiter-fotodetektorvorrichtung.
DE3688064D1 (de)	1993-04-22	Halbleitervorrichtung.
DE3786339D1 (de)	1993-07-29	Halbleiterlaservorrichtung.
DE3750995D1 (de)	1995-03-02	Halbleiterlaservorrichtung.
FR2625043B1 (fr)	1994-02-18	Dispositif semi-conducteur
DE3581370D1 (de)	1991-02-21	Halbleitervorrichtung.
DE3773957D1 (de)	1991-11-28	Halbleitervorrichtung.
DE3889354D1 (de)	1994-06-09	Halbleiteranordnung.
DE3587052D1 (de)	1993-03-18	Halbleiterspeichergeraet.
IT8322373A0 (it)	1983-08-02	Dispositivo semiconduttore.
DE3586568D1 (de)	1992-10-08	Halbleitereinrichtung.
DE3776186D1 (de)	1992-03-05	Halbleiterlaser-vorrichtung.
DE3587457D1 (de)	1993-08-19	Halbleiterspeichereinrichtung.
DE3584614D1 (de)	1991-12-12	Schnittstelleneinrichtung.