MD3548F1 - Photosensitive cell of the photodetector - Google Patents
Photosensitive cell of the photodetector Download PDFInfo
- Publication number
- MD3548F1 MD3548F1 MDA20070120A MD20070120A MD3548F1 MD 3548 F1 MD3548 F1 MD 3548F1 MD A20070120 A MDA20070120 A MD A20070120A MD 20070120 A MD20070120 A MD 20070120A MD 3548 F1 MD3548 F1 MD 3548F1
- Authority
- MD
- Moldova
- Prior art keywords
- substrate
- photon
- photosensitive
- tin
- photodetector
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Inventia se refera la domeniul fotonicii, si anume la instalatiile de detectare a fotonilor, in particular la elementele fotosensibile ale detectoarelor de fotoni in baza de semiconductori. Elementulfotosensibil al detectorului de fotoni contine unsubstrat dielectric de sticla (1), pe care sunt aplicate un substrat de contact (2), un substrat fotosensibil semiconductor (3) din triseleniura de arsen (As2Se3) dopat cu staniu (Sn) cu o concentratie in limitele 3,0…5,0 ( at. si un al doilea substrat de contact (4). Rezultatul consta in aceea ca elementul fotosensibil permite o detectare mai precisa a fotonilor, poseda sensibilitate fotoelectrica sporita si o memorie fotoelectrica cu o capacitate inalta.The invention relates to the field of photonics, namely to photon sensing installations, in particular to the photosensitive elements of photon detectors based on semiconductors. Elementulfotosensitive of the photon detector contains a glass dielectric substrate (1), on which a contact substrate (2), a semiconductor photosensitive substrate (3) of tin doped arsenic (As2Se3) doped with tin (Sn) with a concentration in limits 3.0 ... 5.0 (at. and a second contact substrate (4). The result is that the photosensitive element allows a more accurate detection of photons, possesses increased photoelectric sensitivity and a high capacity photoelectric memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20070120A MD3548G2 (en) | 2007-04-27 | 2007-04-27 | Photosensitive cell of the photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20070120A MD3548G2 (en) | 2007-04-27 | 2007-04-27 | Photosensitive cell of the photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD3548F1 true MD3548F1 (en) | 2008-03-31 |
| MD3548G2 MD3548G2 (en) | 2008-10-31 |
Family
ID=39271509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20070120A MD3548G2 (en) | 2007-04-27 | 2007-04-27 | Photosensitive cell of the photodetector |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD3548G2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD341Z (en) * | 2010-07-30 | 2011-09-30 | Институт Прикладной Физики Академии Наук Молдовы | Method for manufacturing relief holographic diffraction gratings |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD1459C2 (en) * | 1987-06-23 | 2001-02-28 | Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova | Photodetector |
| MD1676G2 (en) * | 1999-07-21 | 2001-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Photodetector |
-
2007
- 2007-04-27 MD MDA20070120A patent/MD3548G2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MD3548G2 (en) | 2008-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |