MD4010F2 - Method for obtaining thin films of oxide semiconductors of In2O3 - Google Patents
Method for obtaining thin films of oxide semiconductors of In2O3 Download PDFInfo
- Publication number
- MD4010F2 MD4010F2 MDA20070334A MD20070334A MD4010F2 MD 4010 F2 MD4010 F2 MD 4010F2 MD A20070334 A MDA20070334 A MD A20070334A MD 20070334 A MD20070334 A MD 20070334A MD 4010 F2 MD4010 F2 MD 4010F2
- Authority
- MD
- Moldova
- Prior art keywords
- in2o3
- oxide semiconductors
- thin films
- films
- obtaining thin
- Prior art date
Links
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 238000005118 spray pyrolysis Methods 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
The invention relates to the field of obtaining thin films of oxide semiconductors, particularly of In2O3. The method includes deposition of films by spray pyrolysis at the temperature of 450...550?C from aqueous InCl3 solutions with the metal salt concentration in the solution exceeding 0.2M with subsequent annealing in the neutral or oxygen-containing atmosphere at a temperature not less than 1000?C. The result of the invention consists in obtaining films with high texture in the direction of (100) having a thickness of 200à3000 nm with large size of the crystallographic plane surface of crystallites.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20070334A MD4010G2 (en) | 2007-12-12 | 2007-12-12 | Method for obtaining thin films of oxide semiconductors of In2O3 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20070334A MD4010G2 (en) | 2007-12-12 | 2007-12-12 | Method for obtaining thin films of oxide semiconductors of In2O3 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| MD20070334A MD20070334A (en) | 2009-09-30 |
| MD4010F2 true MD4010F2 (en) | 2010-01-29 |
| MD4010G2 MD4010G2 (en) | 2010-08-31 |
Family
ID=43568782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20070334A MD4010G2 (en) | 2007-12-12 | 2007-12-12 | Method for obtaining thin films of oxide semiconductors of In2O3 |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4010G2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
| MD175Z (en) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for the obtaining of superconducting films |
| MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
| MD353Z (en) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Superconductor spin valve |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2667437B1 (en) * | 1990-09-28 | 1992-10-30 | Commissariat Energie Atomique | PROCESS FOR THE PREPARATION BY RAPID ANNEALING OF A THIN LAYER OF CRYSTALLIZED MATERIAL OF THE OXIDE TYPE AND SUBSTRATE COATED WITH A THIN LAYER OBTAINED BY THIS PROCESS. |
| JP2735422B2 (en) * | 1991-12-03 | 1998-04-02 | 日鉄鉱業株式会社 | Rutile single crystal processing method |
| RU2051207C1 (en) * | 1992-02-27 | 1995-12-27 | Санкт-Петербургский государственный университет | Method for producing layers of metal hydroxides |
-
2007
- 2007-12-12 MD MDA20070334A patent/MD4010G2/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
| MD175Z (en) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for the obtaining of superconducting films |
| MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
| MD353Z (en) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Superconductor spin valve |
Also Published As
| Publication number | Publication date |
|---|---|
| MD20070334A (en) | 2009-09-30 |
| MD4010G2 (en) | 2010-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |