MD4510C1 - Способ роста структуры n+-p-p+ InP для солнечных батарей - Google Patents

Способ роста структуры n+-p-p+ InP для солнечных батарей Download PDF

Info

Publication number
MD4510C1
MD4510C1 MDA20160074A MD20160074A MD4510C1 MD 4510 C1 MD4510 C1 MD 4510C1 MD A20160074 A MDA20160074 A MD A20160074A MD 20160074 A MD20160074 A MD 20160074A MD 4510 C1 MD4510 C1 MD 4510C1
Authority
MD
Moldova
Prior art keywords
inp
reactor
layer
pinp
growth
Prior art date
Application number
MDA20160074A
Other languages
English (en)
Romanian (ro)
Other versions
MD4510B1 (ru
Inventor
Василе БОТНАРЮК
Петру ГАШИН
Леонид ГОРЧАК
Андрей КОВАЛ
Борис ЧИНИК
Симион РАЕВСКИЙ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20160074A priority Critical patent/MD4510C1/ru
Publication of MD4510B1 publication Critical patent/MD4510B1/ru
Publication of MD4510C1 publication Critical patent/MD4510C1/ru

Links

Abstract

Изобретение относится к полупроводниковой технологии и может быть использовано в устройствах для преобразования солнечного излучения.Способ роста структуры n+-p-p+ InP для солнечных батарей включает рост эпитаксиального слоя pInP на подложках p+InP с кристаллографической ориентацией (100), дезориентацией 3…5° в сторону (110) и с концентрацией носителей заряда 1…3·1018 см-3, рост эпитаксиального слоя n+InP и нанасение омических контактов. Слой n+InP выращен после газового травления реактора и эпитаксиального слоя pInP.
MDA20160074A 2016-06-23 2016-06-23 Способ роста структуры n+-p-p+ InP для солнечных батарей MD4510C1 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (ru) 2016-06-23 2016-06-23 Способ роста структуры n+-p-p+ InP для солнечных батарей

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (ru) 2016-06-23 2016-06-23 Способ роста структуры n+-p-p+ InP для солнечных батарей

Publications (2)

Publication Number Publication Date
MD4510B1 MD4510B1 (ru) 2017-08-31
MD4510C1 true MD4510C1 (ru) 2018-03-31

Family

ID=59759578

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20160074A MD4510C1 (ru) 2016-06-23 2016-06-23 Способ роста структуры n+-p-p+ InP для солнечных батарей

Country Status (1)

Country Link
MD (1) MD4510C1 (ru)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554C1 (ru) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Способ повышения эфективности фотоэлектрических элементов на основе p+InP-p-InP-n+CdS

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1011979A (en) * 1959-06-18 1965-12-01 Monsanto Co Production of epitaxial films
GB1038879A (en) * 1962-07-13 1966-08-10 Monsanto Co Production of chemical compounds and of epitaxial films formed therefrom
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
MD626G2 (ru) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Способ изготовления гетероструктур p+ InP-pInP/CdS и p+GaAs-pGaAs/CdS
MD673G2 (ru) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Способ получения слоев InP
JP2000223422A (ja) * 1999-01-29 2000-08-11 Sumitomo Electric Ind Ltd 半導体エピタキシャルウエハおよびその製造方法ならびに半導体装置
US20060150895A1 (en) * 2000-09-01 2006-07-13 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same
JP2008270484A (ja) * 2007-04-19 2008-11-06 Shin Etsu Handotai Co Ltd 化合物半導体エピタキシャルウェーハの製造方法
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе
UA54800U (ru) * 2010-05-19 2010-11-25 Сычикова Яна Александровна СПОСОБ ПОЛУЧЕНИЯ ПЛЕНКИ НА ПОДКЛАДКЕ ИЗ ПОРИСТОГО СЛОЯ InP
US20120125392A1 (en) * 2010-11-19 2012-05-24 The Boeing Company TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
MD4280B1 (ru) * 2013-09-04 2014-03-31 Universitatea De Stat Din Moldova Способ роста структуры pInP-nCdS
MD972Y (ru) * 2015-02-19 2015-11-30 Universitatea De Stat Din Moldova Способ роста структуры p+InP-p-InP-n+CdS для фотоэлектрических элементов

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1011979A (en) * 1959-06-18 1965-12-01 Monsanto Co Production of epitaxial films
GB1038879A (en) * 1962-07-13 1966-08-10 Monsanto Co Production of chemical compounds and of epitaxial films formed therefrom
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
MD626G2 (ru) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Способ изготовления гетероструктур p+ InP-pInP/CdS и p+GaAs-pGaAs/CdS
MD673G2 (ru) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Способ получения слоев InP
JP2000223422A (ja) * 1999-01-29 2000-08-11 Sumitomo Electric Ind Ltd 半導体エピタキシャルウエハおよびその製造方法ならびに半導体装置
US20060150895A1 (en) * 2000-09-01 2006-07-13 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same
JP2008270484A (ja) * 2007-04-19 2008-11-06 Shin Etsu Handotai Co Ltd 化合物半導体エピタキシャルウェーハの製造方法
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе
UA54800U (ru) * 2010-05-19 2010-11-25 Сычикова Яна Александровна СПОСОБ ПОЛУЧЕНИЯ ПЛЕНКИ НА ПОДКЛАДКЕ ИЗ ПОРИСТОГО СЛОЯ InP
US20120125392A1 (en) * 2010-11-19 2012-05-24 The Boeing Company TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
MD4280B1 (ru) * 2013-09-04 2014-03-31 Universitatea De Stat Din Moldova Способ роста структуры pInP-nCdS
MD972Y (ru) * 2015-02-19 2015-11-30 Universitatea De Stat Din Moldova Способ роста структуры p+InP-p-InP-n+CdS для фотоэлектрических элементов

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
C.J.Keavney and M.B.Spitzer. Indium phosphide solar cells made by ion implantation. Appl.Phys.Lett.52 (17), 25 April 1988, p.1439-1440 *
Mitsuru Sugo, Akio Yamamoto and Masafumi Yamaguchi. N+-p-p+inp Structure inp Solar Cells Grown by Organometallic Vapor-Phase Epitaxy. IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. ED-34. NO.4. APRIL, 1987. PP.772-777 *
Vasile BOTNARIUC, Leonid GORCEAC, Boris CINIC, Andrei COVAL, Ion INCULEŢ, Simion RAEVSCHI, Celule solare cu homojoncţiune din fosfură de indiu, Studia Universitatis Moldaviae, Revistă Ştiinţifică a Universităţii de Stat din Moldova, 2013, nr.2(62) *

Also Published As

Publication number Publication date
MD4510B1 (ru) 2017-08-31

Similar Documents

Publication Publication Date Title
US4912063A (en) Growth of beta-sic thin films and semiconductor devices fabricated thereon
US6660928B1 (en) Multi-junction photovoltaic cell
KR940001249B1 (ko) 단결정 실리콘 기판과 단결정 막의 합성물 및 그 형성방법
Simon et al. Low-cost III–V solar cells grown by hydride vapor-phase epitaxy
GB2492439A (en) Method of cleaving a germanium containing substrate
CA2285788C (en) Method of fabricating film for solar cells
JPS6329928A (ja) シリコン上にガリウムヒ素をエピタキシヤル成長せしめる方法
Kim et al. Highly efficient epitaxial Ge solar cells grown on GaAs (001) substrates by MOCVD using isobutylgermane
Yusof et al. InGaN based Schottky barrier solar cell: Study of the temperature dependence of electrical characteristics
MD4510C1 (ru) Способ роста структуры n+-p-p+ InP для солнечных батарей
Nemirovsky et al. Metalorganic chemical vapor deposition CdTe passivation of HgCdTe
Cox et al. Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures
MD4280C1 (ru) Способ роста структуры pInP-nCdS
CN101608339A (zh) 4H-SiC选择性同质外延生长方法
MD151Y (ro) Procedeu de crestere a straturilor epitaxiale GaAs intr-un reactor orizontal
Ritenour et al. Towards high-efficiency GaAs thin-film solar cells grown via close space vapor transport from a solid source
MD972Z (ru) Способ роста структуры p+InP-p-InP-n+CdS для фотоэлектрических элементов
US20110233730A1 (en) REACTIVE CODOPING OF GaAlInP COMPOUND SEMICONDUCTORS
Greenaway et al. Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices
Giunto et al. Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy
Xu et al. CMOS compatible in-situ n-type doping of ge using new generation doping agents P (MH3) 3 and As (MH3) 3 (M= Si, Ge)
Choi et al. P/N InP homojunction solar cells by LPE and MOCVD techniques
RU2366035C1 (ru) Способ получения структуры многослойного фотоэлектрического преобразователя
MD4686C1 (ru) Способ роста структуры p+InP-p-InP-n+CdS для фотоэлектрических элементов
CA3164557A1 (en) Heteroepitaxial growth method of compound semiconductor materials on multi-oriented semiconductor substrates and devices

Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees