MD627F2 - The method of making epitaxy layers of phosphide indium from gaz phase - Google Patents

The method of making epitaxy layers of phosphide indium from gaz phase

Info

Publication number
MD627F2
MD627F2 MD940257A MD940257A MD627F2 MD 627 F2 MD627 F2 MD 627F2 MD 940257 A MD940257 A MD 940257A MD 940257 A MD940257 A MD 940257A MD 627 F2 MD627 F2 MD 627F2
Authority
MD
Moldova
Prior art keywords
gaz
phase
epitaxy layers
phosphide indium
making
Prior art date
Application number
MD940257A
Other languages
Romanian (ro)
Other versions
MD627G2 (en
Inventor
Vasile Botnariuc
Leonid Gorceac
Ion Diaconu
Andrei Chitoroaga
Valentin Plesca
Simion Raevschi
Original Assignee
Univ De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ De Stat Din Moldova filed Critical Univ De Stat Din Moldova
Priority to MD94-0257A priority Critical patent/MD627G2/en
Publication of MD627F2 publication Critical patent/MD627F2/en
Publication of MD627G2 publication Critical patent/MD627G2/en

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Inventia se refera la tehnologia semiconductorilor si poate fi utilizata la obtinerea straturilor epitaxiale de fosfura de indiu cu parametrii electrofizici dirijabili. Pentru excluderea pierderilor de material al sursei in procesul de saturatie a ei cu fosfor si asigurarea dirijabilitatii compozitiei fazei gazoase prin intermediul procedeului solicitat, c
MD94-0257A 1994-07-25 1994-07-25 The method of making epitaxy layers of phosphide indium from gaz phase MD627G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD94-0257A MD627G2 (en) 1994-07-25 1994-07-25 The method of making epitaxy layers of phosphide indium from gaz phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0257A MD627G2 (en) 1994-07-25 1994-07-25 The method of making epitaxy layers of phosphide indium from gaz phase

Publications (2)

Publication Number Publication Date
MD627F2 true MD627F2 (en) 1996-11-29
MD627G2 MD627G2 (en) 1997-06-30

Family

ID=19738568

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0257A MD627G2 (en) 1994-07-25 1994-07-25 The method of making epitaxy layers of phosphide indium from gaz phase

Country Status (1)

Country Link
MD (1) MD627G2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (en) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for manufacturing a thermoelectric cooler for the Chip substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (en) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for manufacturing a thermoelectric cooler for the Chip substrate

Also Published As

Publication number Publication date
MD627G2 (en) 1997-06-30

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20140725