MD627G2 - The method of making epitaxy layers of phosphide indium from gaz phase - Google Patents
The method of making epitaxy layers of phosphide indium from gaz phaseInfo
- Publication number
- MD627G2 MD627G2 MD94-0257A MD940257A MD627G2 MD 627 G2 MD627 G2 MD 627G2 MD 940257 A MD940257 A MD 940257A MD 627 G2 MD627 G2 MD 627G2
- Authority
- MD
- Moldova
- Prior art keywords
- indium
- bases
- source
- saturation
- gaz
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention relates to the semiconductor technique and may be used for obtaining the indium phosphide epitaxial layers having controlled electrophysical parameters.For removing the source material losses during phosphor saturation thereof and for providing the gase khase compound control by means of the proposed process, including the equipment preparation, bases chemical etching, reactor blow-down within the hydrogen, trichloride thermostatic control, source and bases heating, bases gas etching, the layers growing is conducted by using as source simultaneusly the liquid indium and the solid indium phosphide, located in the separate channels.The technical result of the invention, consists in indium losses prevention at its saturation with phosphor and in the improvement of the epitaxial layers parameters reproduction by the controlled elements proportioning in the gas phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0257A MD627G2 (en) | 1994-07-25 | 1994-07-25 | The method of making epitaxy layers of phosphide indium from gaz phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0257A MD627G2 (en) | 1994-07-25 | 1994-07-25 | The method of making epitaxy layers of phosphide indium from gaz phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD627F2 MD627F2 (en) | 1996-11-29 |
| MD627G2 true MD627G2 (en) | 1997-06-30 |
Family
ID=19738568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD94-0257A MD627G2 (en) | 1994-07-25 | 1994-07-25 | The method of making epitaxy layers of phosphide indium from gaz phase |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD627G2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD151Z (en) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD249Z (en) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for manufacturing a thermoelectric cooler for the Chip substrate |
-
1994
- 1994-07-25 MD MD94-0257A patent/MD627G2/en active IP Right Grant
Non-Patent Citations (2)
| Title |
|---|
| J.Cryst. Growth, vol. 54, nr.1, 1981 (R.C.Clark , Indium phosphide vapor phase epitaxy, p. 88-100). * |
| Сборник "Обзоры по электронной технике", Сер. 2, Полупроводниковые приборы, B. 3, 1985 г. (Т.П.Колмакова, Г.Ф.Лымарь. "Выращивание эпитаксиальных слоев фосфида индия в системе InP-PCl3-H2", c. 93). * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD151Z (en) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| MD627F2 (en) | 1996-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG3A | Granted patent for invention | ||
| IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20140725 |