MX2009005459A - Dispositivo fotovoltaico que incluye apilamiento de metal. - Google Patents

Dispositivo fotovoltaico que incluye apilamiento de metal.

Info

Publication number
MX2009005459A
MX2009005459A MX2009005459A MX2009005459A MX2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A MX 2009005459 A MX2009005459 A MX 2009005459A
Authority
MX
Mexico
Prior art keywords
photovoltaic device
device including
including metal
metal stacking
stacking
Prior art date
Application number
MX2009005459A
Other languages
English (en)
Inventor
Syed Zafar
Greg Helyer
Nelson Christopher Devoe
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of MX2009005459A publication Critical patent/MX2009005459A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Un dispositivo fotovoltaico puede incluir una capa de metal en contacto con una capa semiconductora.
MX2009005459A 2006-11-30 2007-11-15 Dispositivo fotovoltaico que incluye apilamiento de metal. MX2009005459A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US86802306P 2006-11-30 2006-11-30
US11/939,878 US20080128020A1 (en) 2006-11-30 2007-11-14 Photovoltaic devices including a metal stack
PCT/US2007/084828 WO2008067181A2 (en) 2006-11-30 2007-11-15 Photovoltaic device including a metal stack

Publications (1)

Publication Number Publication Date
MX2009005459A true MX2009005459A (es) 2009-06-01

Family

ID=39468615

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009005459A MX2009005459A (es) 2006-11-30 2007-11-15 Dispositivo fotovoltaico que incluye apilamiento de metal.

Country Status (4)

Country Link
US (1) US20080128020A1 (es)
EP (1) EP2089912A4 (es)
MX (1) MX2009005459A (es)
WO (1) WO2008067181A2 (es)

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US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
US8975199B2 (en) 2011-08-12 2015-03-10 Corsam Technologies Llc Fusion formable alkali-free intermediate thermal expansion coefficient glass
US8445394B2 (en) 2008-10-06 2013-05-21 Corning Incorporated Intermediate thermal expansion coefficient glass
EP2351097A2 (en) 2008-10-23 2011-08-03 Alta Devices, Inc. Photovoltaic device
EP2356686A4 (en) * 2008-11-25 2013-05-29 First Solar Inc PV MODULES WITH COPPER IDENTIAL GALLIUM IDENTIFIER
US20100126580A1 (en) * 2008-11-26 2010-05-27 Farrell James F CdTe deposition process for solar cells
US8222765B2 (en) * 2009-02-13 2012-07-17 First Solar, Inc. Photovoltaic power plant output
US8418418B2 (en) 2009-04-29 2013-04-16 3Form, Inc. Architectural panels with organic photovoltaic interlayers and methods of forming the same
US9691921B2 (en) * 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US9136422B1 (en) 2012-01-19 2015-09-15 Alta Devices, Inc. Texturing a layer in an optoelectronic device for improved angle randomization of light
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
DE102010028189B4 (de) * 2010-04-26 2018-09-27 Solarworld Industries Gmbh Solarzelle
US9461186B2 (en) * 2010-07-15 2016-10-04 First Solar, Inc. Back contact for a photovoltaic module
TW201314926A (zh) * 2010-09-27 2013-04-01 Astrowatt Inc 包含半導體層及含金屬層之電子裝置及其形成方法
US20130220413A1 (en) * 2010-11-14 2013-08-29 Arizona Board of Regents, a body Corporate of the State of Arizona acting for and on behalf of Arzon Plasmonic Structures, Methods for Making Plasmonic Structures, and Devices Including Them
CN103597614B (zh) * 2011-06-15 2017-03-01 3M创新有限公司 具有改善的转换效率的太阳能电池
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
US11257978B2 (en) * 2019-03-29 2022-02-22 Utica Leaseco, Llc Front metal contact stack

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US4297717A (en) * 1965-09-28 1981-10-27 Li Chou H Semiconductor device
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
US4172925A (en) * 1978-02-22 1979-10-30 Refac Electronics Corporation Photoelectrochemical cell
US4207119A (en) * 1978-06-02 1980-06-10 Eastman Kodak Company Polycrystalline thin film CdS/CdTe photovoltaic cell
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
DE3242791A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
JPH02268469A (ja) * 1989-03-30 1990-11-02 Atlantic Richfield Co <Arco> 薄膜半導体デバイスとそれを製造する方法
US5103268A (en) * 1989-03-30 1992-04-07 Siemens Solar Industries, L.P. Semiconductor device with interfacial electrode layer
JPH04209576A (ja) * 1990-12-07 1992-07-30 Kanegafuchi Chem Ind Co Ltd 光電変換素子
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
DE4333407C1 (de) * 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
US6805998B2 (en) * 2000-03-24 2004-10-19 Cymbet Corporation Method and apparatus for integrated-battery devices
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US20050064731A1 (en) * 2001-07-20 2005-03-24 Hongkun Park Transition metal oxide nanowires
JP4240933B2 (ja) * 2002-07-18 2009-03-18 キヤノン株式会社 積層体形成方法
US6794976B2 (en) * 2002-12-24 2004-09-21 Illinois Tool Works Inc. HF transformer assembly having a higher leakage inductance boost winding
US7075103B2 (en) * 2003-12-19 2006-07-11 General Electric Company Multilayer device and method of making
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US20050257824A1 (en) 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
US7087521B2 (en) * 2004-11-19 2006-08-08 Intel Corporation Forming an intermediate layer in interconnect joints and structures formed thereby

Also Published As

Publication number Publication date
WO2008067181A3 (en) 2008-08-07
EP2089912A4 (en) 2011-04-27
US20080128020A1 (en) 2008-06-05
WO2008067181A2 (en) 2008-06-05
EP2089912A2 (en) 2009-08-19

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