MY102843A - Apparatus for manufacturing semiconductor single crystals - Google Patents

Apparatus for manufacturing semiconductor single crystals

Info

Publication number
MY102843A
MY102843A MYPI87000270A MYPI19870270A MY102843A MY 102843 A MY102843 A MY 102843A MY PI87000270 A MYPI87000270 A MY PI87000270A MY PI19870270 A MYPI19870270 A MY PI19870270A MY 102843 A MY102843 A MY 102843A
Authority
MY
Malaysia
Prior art keywords
piece
single crystals
semiconductor
pool
semiconductor single
Prior art date
Application number
MYPI87000270A
Inventor
Murakami Katsuhiko
Kazama Akira
Horie Shigetake
Araki Kenji
Kamio Hiroshi
Nakaoka Kazuhide
Original Assignee
Nippon Kokan Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kokan Kk filed Critical Nippon Kokan Kk
Publication of MY102843A publication Critical patent/MY102843A/en

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

AN APPARATUS FOR CONTINUOUSLY MANUFACTURING SEMICONDUCTOR SINGLE CRYSTALS IN WHICH WHILE ROTATING THE SEMICONDUCTOR MATERIAL, THE SEMICONDUCTOR MATERIAL IS PULLED GRADUALLY FROM A MOLTEN POOL (5) OF THE SEMICONDUCTOR MATERIAL MELTED INTO THE CRUCIBLE (1, 4) AND SOLIDIFIED INTO A ROUND SHAPE BAR (7) THEREBY PRODUCING A SEMICONDUCTOR SINGLE CRYSTALS BAR (7), AT LEAST ONE LONG PIECE (9) OF SEMICONDUCTOR STARTING MATERIAL, HEATER (10) FOR HEATING THE STARTING MATERIAL PIECE (9) TO PROVIDE A MELT ON THE LOWER END OF THE PIECE (9), SUPPORT (8) FOR SUPPORTING THE PIECE (9) ABOVE THE MOLTEN POOL (5) VIA A GAP SO THAT THE MELT (11) ON THE LOWER END OF THE PIECE (9) IS DRIPPED INTO THE POOL (5), AND SURFACE CALMATIVE BAFFLE (12, 13) FOR PREVENTING A DISTURBANCE IN THE SURFACE OF THE POOL (5) DUE TO SAID DRIP (11) FROM THE PIECE (9) FROM REACHING TO THE SOLIDIFIED PORTION IN THE CENTRAL SURFACE AREA OF THE MOLTEN POOL (5). (FIG. 1)
MYPI87000270A 1986-03-13 1987-03-11 Apparatus for manufacturing semiconductor single crystals MY102843A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5356086 1986-03-13
JP12919286 1986-06-05

Publications (1)

Publication Number Publication Date
MY102843A true MY102843A (en) 1993-03-31

Family

ID=26394273

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI87000270A MY102843A (en) 1986-03-13 1987-03-11 Apparatus for manufacturing semiconductor single crystals

Country Status (2)

Country Link
CN (1) CN1015649B (en)
MY (1) MY102843A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100800212B1 (en) * 2006-08-02 2008-02-01 주식회사 실트론 Apparatus and method for supplying a solid raw material to a single crystal growth apparatus
CN101698960B (en) * 2009-11-09 2012-11-21 西安隆基硅材料股份有限公司 Material supplementing method and material supplementing device for pulling of crystals
CN105887185A (en) * 2016-05-30 2016-08-24 上海超硅半导体有限公司 Manufacturing method for multiply pulling monocrystalline silicon
CN105887193A (en) * 2016-05-30 2016-08-24 上海超硅半导体有限公司 Silicone single crystal growth technique with uniform axial electrical resistivity
CN111041551B (en) * 2020-01-06 2021-02-05 北京北方华创真空技术有限公司 Czochralski silicon single crystal furnace

Also Published As

Publication number Publication date
CN1015649B (en) 1992-02-26
CN87101952A (en) 1987-09-23

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