MY103709A - Method and apparatus for manufacturing silicon single crystals. - Google Patents

Method and apparatus for manufacturing silicon single crystals.

Info

Publication number
MY103709A
MY103709A MYPI89000584A MYPI19890584A MY103709A MY 103709 A MY103709 A MY 103709A MY PI89000584 A MYPI89000584 A MY PI89000584A MY PI19890584 A MYPI19890584 A MY PI19890584A MY 103709 A MY103709 A MY 103709A
Authority
MY
Malaysia
Prior art keywords
silicon
single crystal
section
silicon single
single crystals
Prior art date
Application number
MYPI89000584A
Inventor
Suzuki Makoto
Araki Kenji
Horie Shigetake
Nakahama Yasumitsu
Kamio Hiroshi
Kazama Akira
Shima Yoshinobu
Original Assignee
Nippon Kokan Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63104278A external-priority patent/JPH01275495A/en
Priority claimed from JP63131653A external-priority patent/JPH01301579A/en
Priority claimed from JP63208446A external-priority patent/JPH0259494A/en
Application filed by Nippon Kokan Kk filed Critical Nippon Kokan Kk
Publication of MY103709A publication Critical patent/MY103709A/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

THE PRESENT INVENTION RELATES TO A METHOD AND APPARATUS FOR MANUFACTURING SILICON SINGLE CRYSTALS BY THE CZOCHRALSKI METHOD, INCLUDING THE STEPS OF DIVIDING A CRUCIBLE CONTAINING MOLTEN SILICON INTO AN INNER SINGLE CRYSTAL GROWING SECTION AND AN OUTER MATERIAL FEEDING SECTION TO ALLOW SAID MOLTEN SILICON TO MOVE SLOWLY, AND PULLING A SILICON SINGLE CRYSTAL FROM SAID SINGLE CRYSTAL GROWING SECTION WHILE CONTINUOUSLY FEEDING SILICON STARTING MATERIAL TO SAID MATERIAL FEEDING SECTION, THE IMPROVEMENT WHEREIN TEMPERATURES OF SAID MATERIAL FEEDING SECTION AND SAID MOLTEN SILICON ARE MAINTAINED HIGHER THAN A MELTING POINT OF SILICON BY AT LEAST MORE THAN 12?C.
MYPI89000584A 1988-04-28 1989-04-28 Method and apparatus for manufacturing silicon single crystals. MY103709A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63104278A JPH01275495A (en) 1988-04-28 1988-04-28 Production of silicon single crystal and device therefor
JP63131653A JPH01301579A (en) 1988-05-31 1988-05-31 Production of silicon single crystal and apparatus therefor
JP63208446A JPH0259494A (en) 1988-08-24 1988-08-24 Production of silicon single crystal and apparatus

Publications (1)

Publication Number Publication Date
MY103709A true MY103709A (en) 1993-08-28

Family

ID=79553796

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI89000584A MY103709A (en) 1988-04-28 1989-04-28 Method and apparatus for manufacturing silicon single crystals.

Country Status (1)

Country Link
MY (1) MY103709A (en)

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