MY123980A - Photoresist compositions comprising polycyclic polymers with acid labile pendant groups - Google Patents

Photoresist compositions comprising polycyclic polymers with acid labile pendant groups

Info

Publication number
MY123980A
MY123980A MYPI98004156A MYPI9804156A MY123980A MY 123980 A MY123980 A MY 123980A MY PI98004156 A MYPI98004156 A MY PI98004156A MY PI9804156 A MYPI9804156 A MY PI9804156A MY 123980 A MY123980 A MY 123980A
Authority
MY
Malaysia
Prior art keywords
acid labile
polymer
pendant groups
photoresist compositions
labile pendant
Prior art date
Application number
MYPI98004156A
Other languages
English (en)
Inventor
Brian L Goodall
Robert S Shick
Larry F Rhodes
Robert David Allen
Richard Anthony Dipietro
Thomas Wallow
Jayaraman Saikumar
Original Assignee
Ibm
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Sumitomo Bakelite Co filed Critical Ibm
Publication of MY123980A publication Critical patent/MY123980A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D487/00Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04Ortho-condensed systems
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
MYPI98004156A 1997-09-12 1998-09-10 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups MY123980A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92890097A 1997-09-12 1997-09-12

Publications (1)

Publication Number Publication Date
MY123980A true MY123980A (en) 2006-06-30

Family

ID=25456971

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI98004156A MY123980A (en) 1997-09-12 1998-09-10 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups

Country Status (10)

Country Link
EP (1) EP1021750A1 (id)
JP (1) JP4416941B2 (id)
KR (1) KR100572899B1 (id)
CN (1) CN1251021C (id)
AU (1) AU747516C (id)
ID (1) ID25549A (id)
MY (1) MY123980A (id)
RU (1) RU2199773C2 (id)
TW (1) TWI235285B (id)
WO (1) WO1999014635A1 (id)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3303599A (en) * 1998-02-23 1999-09-06 B.F. Goodrich Company, The Polycyclic resist compositions with increased etch resistance
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
KR100518993B1 (ko) * 2000-04-27 2005-10-06 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법
JP3997381B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
JP3997382B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
JP4544389B2 (ja) * 2000-04-28 2010-09-15 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI284782B (en) * 2000-04-28 2007-08-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP4626736B2 (ja) * 2000-10-04 2011-02-09 Jsr株式会社 環状オレフィン系共重合体を含む光学透明材料および液晶表示基板材料
KR100555287B1 (ko) * 2001-01-17 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 에테르 화합물, 고분자 화합물, 레지스트 재료 및 패턴형성 방법
US7037993B2 (en) * 2002-04-08 2006-05-02 Zeon Corporation Norbornene-based ring-opening polymerization polymer, product of hydrogenation of norbornene-based ring-opening polymerization polymer, and processes for producing these
WO2004007587A1 (en) * 2002-07-10 2004-01-22 Lg Chem, Ltd. Nobonene-ester based addition polymer and method for preparing the same
EP1448617B1 (en) 2002-07-10 2015-07-01 LG Chem, Ltd. Method for preparing norbornene based addition polymer containing ester or acetyl functional group
KR100526403B1 (ko) 2002-07-10 2005-11-08 주식회사 엘지화학 에스테르기 또는 아세틸기를 포함하는 노보넨계부가중합체의 제조방법
US7989571B2 (en) 2002-07-10 2011-08-02 Lg Chem, Ltd. Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
US7422836B2 (en) * 2003-02-20 2008-09-09 Promerus Llc Dissolution rate modifiers for photoresist compositions
US20070112158A1 (en) * 2003-11-18 2007-05-17 Jsr Corporation Novel (co)polymer, process for producing the same, and process for producing carboxylated (co)polymer
JP2006100563A (ja) * 2004-09-29 2006-04-13 Sumitomo Bakelite Co Ltd 半導体装置
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
KR100990106B1 (ko) 2007-04-13 2010-10-29 후지필름 가부시키가이샤 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
MY146582A (en) * 2007-04-27 2012-08-30 Mitsui Chemicals Inc Resin composition and molded product obtained from the composition
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
KR100989567B1 (ko) 2007-05-15 2010-10-25 후지필름 가부시키가이샤 패턴형성방법
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
WO2008153110A1 (ja) 2007-06-12 2008-12-18 Fujifilm Corporation ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP5332883B2 (ja) * 2009-04-30 2013-11-06 住友ベークライト株式会社 感光性組成物、光導波路、光配線、光電気混載基板、電子機器、および光導波路の形成方法
RU2427016C1 (ru) * 2010-03-03 2011-08-20 Закрытое акционерное общество "Институт прикладной нанотехнологии" Способ получения позитивного фоторезиста
JP6459192B2 (ja) * 2014-03-20 2019-01-30 住友ベークライト株式会社 感光性樹脂組成物
KR102324819B1 (ko) 2014-12-12 2021-11-11 삼성전자주식회사 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
KR101746789B1 (ko) 2014-12-18 2017-06-13 주식회사 엘지화학 고리형 올레핀 화합물의 (공)중합체를 포함하는 수직 배향막
GB201522304D0 (en) 2015-12-17 2016-02-03 Mars Inc Food product for reducing muscle breakdown

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1289237A (en) * 1910-07-05 1918-12-31 Lansing Onderdonk Stamp-affixing machine.
US4106943A (en) * 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Jsr株式会社 ArFエキシマレーザー照射用感放射線性樹脂組成物
WO1997033198A1 (en) * 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
KR100261022B1 (ko) * 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물

Also Published As

Publication number Publication date
RU2199773C2 (ru) 2003-02-27
EP1021750A1 (en) 2000-07-26
JP2001516804A (ja) 2001-10-02
JP4416941B2 (ja) 2010-02-17
CN1251021C (zh) 2006-04-12
WO1999014635A1 (en) 1999-03-25
AU9219998A (en) 1999-04-05
KR100572899B1 (ko) 2006-04-24
TWI235285B (en) 2005-07-01
AU747516C (en) 2003-07-24
CN1276884A (zh) 2000-12-13
KR20010023940A (ko) 2001-03-26
HK1030992A1 (en) 2001-05-25
ID25549A (id) 2000-10-12
AU747516B2 (en) 2002-05-16

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