MY155977A - Ferromagnetic sputtering target - Google Patents

Ferromagnetic sputtering target

Info

Publication number
MY155977A
MY155977A MYPI2013001160A MYPI2013001160A MY155977A MY 155977 A MY155977 A MY 155977A MY PI2013001160 A MYPI2013001160 A MY PI2013001160A MY PI2013001160 A MYPI2013001160 A MY PI2013001160A MY 155977 A MY155977 A MY 155977A
Authority
MY
Malaysia
Prior art keywords
sputtering target
mol
phase
ferromagnetic sputtering
alloy
Prior art date
Application number
MYPI2013001160A
Inventor
Arakawa Atsutoshi
Ikeda Yuki
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY155977A publication Critical patent/MY155977A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

PROVIDED IS A FERROMAGNETIC SPUTTERING TARGET HAVING A METAL COMPOSITION COMPRISING 20 MOL% OR LESS OF CR, 5 MOL% OR MORE OF RU, AND THE BALANCE OF CO, WHEREIN THE TARGET INCLUDES A METAL BASE (A) AND TWO DIFFERENT PHASES (B) AND (C) IN THE METAL BASE (A), THE PHASE (B) BEING A CO-RU ALLOY PHASE CONTAINING 30 MOL% OR MORE OF RU, AND THE PHASE (C) BEING A METAL OR ALLOY PHASE PRIMARILY COMPOSED OF CO OR A CO ALLOY. THE PRESENT INVENTION IMPROVES THE LEAKAGE MAGNETIC FLUX TO PROVIDE A FERROMAGNETIC SPUTTERING TARGET THAT CAN PERFORM STABLE DISCHARGE WITH A MAGNETRON SPUTTERING DEVICE.
MYPI2013001160A 2010-12-22 2011-12-19 Ferromagnetic sputtering target MY155977A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010285905 2010-12-22

Publications (1)

Publication Number Publication Date
MY155977A true MY155977A (en) 2015-12-31

Family

ID=46313845

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2013001160A MY155977A (en) 2010-12-22 2011-12-19 Ferromagnetic sputtering target

Country Status (7)

Country Link
US (1) US20130206592A1 (en)
JP (1) JP5394577B2 (en)
CN (1) CN103180481B (en)
MY (1) MY155977A (en)
SG (1) SG189202A1 (en)
TW (1) TWI509096B (en)
WO (1) WO2012086575A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011089760A1 (en) 2010-01-21 2011-07-28 Jx日鉱日石金属株式会社 Ferromagnetic-material sputtering target
CN102482765B (en) 2010-07-20 2014-03-26 吉坤日矿日石金属株式会社 Sputtering target of ferromagnetic material with low generation of particles
MY157156A (en) 2010-07-20 2016-05-13 Jx Nippon Mining & Metals Corp Sputtering target of ferromagnetic material with low generation of particles
US9732414B2 (en) 2012-01-18 2017-08-15 Jx Nippon Mining And Metals Corporation Co—Cr—Pt-based sputtering target and method for producing same
CN104126026B (en) 2012-02-23 2016-03-23 吉坤日矿日石金属株式会社 Ferromagnetic material sputtering target containing chromated oxide
US9970099B2 (en) 2012-03-09 2018-05-15 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording medium, and process for producing same
JP5592022B2 (en) 2012-06-18 2014-09-17 Ｊｘ日鉱日石金属株式会社 Sputtering target for magnetic recording film
CN115094390A (en) 2014-09-30 2022-09-23 捷客斯金属株式会社 Master alloy for sputtering target and method for producing sputtering target
TWI679291B (en) * 2017-09-21 2019-12-11 日商Ｊｘ金屬股份有限公司 Sputtering target, manufacturing method of laminated film, laminated film and magnetic recording medium
JP6971901B2 (en) * 2018-03-27 2021-11-24 Ｊｘ金属株式会社 Sputtering target
US12230485B2 (en) 2019-07-18 2025-02-18 Tanaka Kikinzoku Kogyo K.K. Sputtering target for magnetic recording medium

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3345199B2 (en) * 1994-12-21 2002-11-18 株式会社日立製作所 Perpendicular magnetic recording medium and magnetic recording device
JP4552668B2 (en) * 2004-02-05 2010-09-29 富士電機デバイステクノロジー株式会社 Perpendicular magnetic recording medium and manufacturing method thereof
US20050277002A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
US20050274221A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
JPWO2009014205A1 (en) * 2007-07-26 2010-10-07 昭和電工株式会社 Perpendicular magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus
JP5394575B2 (en) * 2010-12-17 2014-01-22 Ｊｘ日鉱日石金属株式会社 Ferromagnetic sputtering target
SG188603A1 (en) * 2010-12-17 2013-04-30 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target

Also Published As

Publication number Publication date
CN103180481A (en) 2013-06-26
US20130206592A1 (en) 2013-08-15
SG189202A1 (en) 2013-05-31
JP5394577B2 (en) 2014-01-22
TW201239121A (en) 2012-10-01
TWI509096B (en) 2015-11-21
WO2012086575A1 (en) 2012-06-28
JPWO2012086575A1 (en) 2014-05-22
CN103180481B (en) 2015-04-08

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