MY158548A - Organometallic compounds and methods of use thereof - Google Patents

Organometallic compounds and methods of use thereof

Info

Publication number
MY158548A
MY158548A MYPI20080900A MYPI20080900A MY158548A MY 158548 A MY158548 A MY 158548A MY PI20080900 A MYPI20080900 A MY PI20080900A MY PI20080900 A MYPI20080900 A MY PI20080900A MY 158548 A MY158548 A MY 158548A
Authority
MY
Malaysia
Prior art keywords
metal
precursor compounds
organometallic precursor
methods
organometallic compounds
Prior art date
Application number
MYPI20080900A
Inventor
David W Peters
David M Thompson
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/501,075 external-priority patent/US7547796B2/en
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of MY158548A publication Critical patent/MY158548A/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/508—Network service management, e.g. ensuring proper service fulfilment according to agreements based on type of value added network service under agreement
    • H04L41/5096—Network service management, e.g. ensuring proper service fulfilment according to agreements based on type of value added network service under agreement wherein the managed service relates to distributed or central networked applications
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/5003—Managing SLA; Interaction between SLA and QoS
    • H04L41/5009—Determining service level performance parameters or violations of service level contracts, e.g. violations of agreed response time or mean time between failures [MTBF]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/5061—Network service management, e.g. ensuring proper service fulfilment according to agreements characterised by the interaction between service providers and their network customers, e.g. customer relationship management
    • H04L41/507—Filtering out customers affected by service problems
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L67/00—Network arrangements or protocols for supporting network services or applications
    • H04L67/50—Network services
    • H04L67/535—Tracking the activity of the user
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L69/00—Network arrangements, protocols or services independent of the application payload and not provided for in the other groups of this subclass
    • H04L69/30—Definitions, standards or architectural aspects of layered protocol stacks
    • H04L69/32—Architecture of open systems interconnection [OSI] 7-layer type protocol stacks, e.g. the interfaces between the data link level and the physical level
    • H04L69/322—Intralayer communication protocols among peer entities or protocol data unit [PDU] definitions
    • H04L69/329—Intralayer communication protocols among peer entities or protocol data unit [PDU] definitions in the application layer [OSI layer 7]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/5032—Generating service level reports

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Business, Economics & Management (AREA)
  • General Business, Economics & Management (AREA)
  • Computer Security & Cryptography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

THIS INVENTION RELATED TO ORGANOMETALLIC PRECURSOR COMPOUNDS REPRESENTED BY THE FORMULA (CP(R')x)yM(H)z-y, A PROCESS FOR PRODUCING THE ORGANOMETALLIC PRECURSOR COMPOUNDS, AND A METHOD FOR DEPOSITING A METAL AND/OR METAL CARBIDE LAYER, E.G., TA METAL AND/OR TAC LAYER, ON A SUBSTRATE BY THE THERMAL OR PLASMA ENHANCED DISASSOCIATION OF THE ORGANOMETALLIC PRECURSOR COMPOUNDS, E.G., BY CVD OR ALD TECHNIQUES. THE METAL AND/OR METAL CARBIDE LAYER IS USEFUL AS A LINER OR BARRIER FOR CONDUCTING METALS AND HIGH DIELECTRIC CONSTANT MATERIALS IN INTEGRATED CIRCUIT MANUFACTURING.
MYPI20080900A 2005-09-29 2006-09-26 Organometallic compounds and methods of use thereof MY158548A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72180805P 2005-09-29 2005-09-29
US11/501,075 US7547796B2 (en) 2005-09-29 2006-08-09 Organometallic compounds, processes for the preparation thereof and methods of use thereof

Publications (1)

Publication Number Publication Date
MY158548A true MY158548A (en) 2016-10-14

Family

ID=64327624

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20080900A MY158548A (en) 2005-09-29 2006-09-26 Organometallic compounds and methods of use thereof

Country Status (3)

Country Link
JP (1) JP2009510074A (en)
MY (1) MY158548A (en)
WO (1) WO2007041089A2 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US8153831B2 (en) * 2006-09-28 2012-04-10 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
KR102216575B1 (en) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Titanium aluminum and tantalum aluminum thin films
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (en) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. Formation of SiOC thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
KR102805403B1 (en) 2017-05-05 2025-05-13 에이에스엠 아이피 홀딩 비.브이. Plasma Enhanced Deposition Processes for Controlled Formation of Oxygen Containing Thin Film
WO2018213018A1 (en) 2017-05-16 2018-11-22 Asm Ip Holding B.V. Selective peald of oxide on dielectric
US10991573B2 (en) 2017-12-04 2021-04-27 Asm Ip Holding B.V. Uniform deposition of SiOC on dielectric and metal surfaces
US12359315B2 (en) 2019-02-14 2025-07-15 Asm Ip Holding B.V. Deposition of oxides and nitrides
US12341005B2 (en) 2020-01-17 2025-06-24 Asm Ip Holding B.V. Formation of SiCN thin films
US12142479B2 (en) 2020-01-17 2024-11-12 Asm Ip Holding B.V. Formation of SiOCN thin films
KR20220020210A (en) 2020-08-11 2022-02-18 에이에스엠 아이피 홀딩 비.브이. Methods for Depositing a Titinum Aluminun Carbide Film Structuru on a Substrate and Releated Semiconductor Structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
JPH05209272A (en) * 1991-12-20 1993-08-20 Nec Corp Method for growing tungsten film
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
JP2004228526A (en) * 2003-01-27 2004-08-12 Tokyo Electron Ltd Substrate processing method and semiconductor device manufacturing method
JP2005069726A (en) * 2003-08-28 2005-03-17 Mitsubishi Materials Corp Evaluation method of organometallic compounds
JP2006148089A (en) * 2004-10-22 2006-06-08 Tokyo Electron Ltd Deposition method
US20060121307A1 (en) * 2004-10-22 2006-06-08 Tokyo Electron Limited Film deposition method

Also Published As

Publication number Publication date
WO2007041089A3 (en) 2007-06-07
WO2007041089A2 (en) 2007-04-12
JP2009510074A (en) 2009-03-12

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