MY188184A - Ni-based target material excellent in sputtering property - Google Patents
Ni-based target material excellent in sputtering propertyInfo
- Publication number
- MY188184A MY188184A MYPI2017702870A MYPI2017702870A MY188184A MY 188184 A MY188184 A MY 188184A MY PI2017702870 A MYPI2017702870 A MY PI2017702870A MY PI2017702870 A MYPI2017702870 A MY PI2017702870A MY 188184 A MY188184 A MY 188184A
- Authority
- MY
- Malaysia
- Prior art keywords
- target material
- phase
- content
- total
- alloy
- Prior art date
Links
- 239000013077 target material Substances 0.000 title abstract 3
- 238000004544 sputter deposition Methods 0.000 title 1
- 239000000956 alloy Substances 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 4
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 239000011159 matrix material Substances 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 238000005477 sputtering target Methods 0.000 abstract 2
- 229910018062 Ni-M Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 230000035699 permeability Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
A problem of the present invention is to provide a Ni-based alloy sputtering target material that is capable of obtaining a strong pass-through-flux and has a low magnetic permeability and a high use efficiency. In order to solve such a problem, there is provided a Ni-based sputtering target material including a (Nix-Fev-Coz)-M alloy, wherein: X, Y, and z represent the ratios of the content of Ni, the content of Fe, and the content of Co to the total content of Ni, Fe, and Co, respectively; the alloy includes as M elements, 2 to 20 at.% in total of one or more M1 elements selected from W, Mo, Ta, Cr, V, and Nb, and 0 to 10 at.% in total of one or more M2 elements selected from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, and Ru, and the balance of Ni, Fe, Co and unavoidable impurities; assuming that X + Y + Z = 100 is satisfied, 20 < X < 98, 0 < Y < 50, and 0 < Z < 60 are satisfied; and the alloy includes a microstructure that contains a Ni-M phase as a matrix phase, wherein an Fe phase and/or a Co phase are dispersed in the matrix phase.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015023101A JP6581780B2 (en) | 2015-02-09 | 2015-02-09 | Ni-based target material with excellent sputtering properties |
| PCT/JP2016/053350 WO2016129492A1 (en) | 2015-02-09 | 2016-02-04 | Ni BASED TARGET MATERIAL WITH EXCELLENT SPUTTERING PROPERTIES |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY188184A true MY188184A (en) | 2021-11-24 |
Family
ID=56614649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2017702870A MY188184A (en) | 2015-02-09 | 2016-02-04 | Ni-based target material excellent in sputtering property |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP6581780B2 (en) |
| CN (1) | CN107250424A (en) |
| MY (1) | MY188184A (en) |
| SG (2) | SG10201906538UA (en) |
| TW (1) | TW201700742A (en) |
| WO (1) | WO2016129492A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7385370B2 (en) * | 2019-05-07 | 2023-11-22 | 山陽特殊製鋼株式会社 | Ni-based sputtering target and magnetic recording medium |
| JP7274361B2 (en) * | 2019-06-19 | 2023-05-16 | 山陽特殊製鋼株式会社 | Alloy for seed layer of magnetic recording media |
| WO2021054136A1 (en) * | 2019-09-19 | 2021-03-25 | 日立金属株式会社 | Target |
| CN115161603B (en) * | 2022-05-17 | 2023-02-21 | 广东欧莱高新材料股份有限公司 | Production process of high-purity multi-element alloy rotary sputtering target for high-definition liquid crystal display of high generation |
| CN119549713B (en) * | 2024-12-10 | 2025-11-25 | 先导薄膜材料(安徽)有限公司 | A method for preparing NiFeWAl alloy targets by hot pressing, and NiFeWAl alloy targets. |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941920A (en) * | 1987-11-25 | 1990-07-17 | Hitachi Metals, Ltd. | Sintered target member and method of producing same |
| US20030228238A1 (en) * | 2002-06-07 | 2003-12-11 | Wenjun Zhang | High-PTF sputtering targets and method of manufacturing |
| JP5403418B2 (en) * | 2008-09-22 | 2014-01-29 | 日立金属株式会社 | Method for producing Co-Fe-Ni alloy sputtering target material |
| JP5370917B2 (en) * | 2009-04-20 | 2013-12-18 | 日立金属株式会社 | Method for producing Fe-Co-Ni alloy sputtering target material |
| JP5726615B2 (en) * | 2010-11-22 | 2015-06-03 | 山陽特殊製鋼株式会社 | Alloy for seed layer of magnetic recording medium and sputtering target material |
| JP5751093B2 (en) * | 2011-08-24 | 2015-07-22 | 新日鐵住金株式会社 | Surface-treated hot-dip galvanized steel |
-
2015
- 2015-02-09 JP JP2015023101A patent/JP6581780B2/en active Active
-
2016
- 2016-02-04 CN CN201680006203.9A patent/CN107250424A/en active Pending
- 2016-02-04 SG SG10201906538UA patent/SG10201906538UA/en unknown
- 2016-02-04 WO PCT/JP2016/053350 patent/WO2016129492A1/en not_active Ceased
- 2016-02-04 MY MYPI2017702870A patent/MY188184A/en unknown
- 2016-02-04 SG SG11201706370SA patent/SG11201706370SA/en unknown
- 2016-02-05 TW TW105104154A patent/TW201700742A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016145394A (en) | 2016-08-12 |
| SG11201706370SA (en) | 2017-09-28 |
| CN107250424A (en) | 2017-10-13 |
| JP6581780B2 (en) | 2019-09-25 |
| TW201700742A (en) | 2017-01-01 |
| SG10201906538UA (en) | 2019-08-27 |
| WO2016129492A1 (en) | 2016-08-18 |
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