MY6900306A - Method and apparatus for growing semiconductor crystals - Google Patents

Method and apparatus for growing semiconductor crystals

Info

Publication number
MY6900306A
MY6900306A MY1969306A MY6900306A MY6900306A MY 6900306 A MY6900306 A MY 6900306A MY 1969306 A MY1969306 A MY 1969306A MY 6900306 A MY6900306 A MY 6900306A MY 6900306 A MY6900306 A MY 6900306A
Authority
MY
Malaysia
Prior art keywords
semiconductor crystals
growing semiconductor
growing
crystals
semiconductor
Prior art date
Application number
MY1969306A
Other languages
English (en)
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Publication of MY6900306A publication Critical patent/MY6900306A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
MY1969306A 1960-04-13 1969-12-31 Method and apparatus for growing semiconductor crystals MY6900306A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21997A US3154384A (en) 1960-04-13 1960-04-13 Apparatus for growing compound semiconductor crystal

Publications (1)

Publication Number Publication Date
MY6900306A true MY6900306A (en) 1969-12-31

Family

ID=21807286

Family Applications (1)

Application Number Title Priority Date Filing Date
MY1969306A MY6900306A (en) 1960-04-13 1969-12-31 Method and apparatus for growing semiconductor crystals

Country Status (5)

Country Link
US (1) US3154384A (fr)
BE (1) BE602573A (fr)
DE (1) DE1519914B2 (fr)
GB (1) GB990163A (fr)
MY (1) MY6900306A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3338678A (en) * 1961-04-27 1967-08-29 Ibm Method and apparatus for growing crystals
BE626374A (fr) * 1961-12-22
US3372003A (en) * 1963-07-19 1968-03-05 Shin Nippon Chisso Hiryo Kabus Apparatus and method for producing silicon single crystals for semiconductor
DE1238450B (de) * 1964-06-04 1967-04-13 Consortium Elektrochem Ind Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze
DE1233828B (de) * 1964-07-03 1967-02-09 Wacker Chemie Gmbh Verfahren zur Herstellung, Reinigung und/oder Dotierung von ein- oder polykristallinen Halbleiterverbindungen
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
BE676042A (fr) * 1965-02-10 1966-06-16
NL128651C (fr) * 1966-01-26
US3933990A (en) * 1969-08-11 1976-01-20 Hughes Aircraft Company Synthesization method of ternary chalcogenides
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
US3933572A (en) * 1973-12-11 1976-01-20 The United States Of America As Represented By The Secretary Of The Air Force Method for growing crystals
DE2420899A1 (de) * 1974-04-30 1975-12-11 Wacker Chemitronic Verfahren zur herstellung von einkristallinem galliumarsenid
DE3432467C1 (de) * 1984-09-04 1986-03-27 Kernforschungsanlage Jülich GmbH, 5170 Jülich Stab- und Tiegelhalterung
DE3579080D1 (de) * 1984-09-04 1990-09-13 Forschungszentrum Juelich Gmbh Verfahren zur herstellung eines kristallinen koerpers aus der schmelze.
US4721539A (en) * 1986-07-15 1988-01-26 The United States Of America As Represented By The United States Department Of Energy Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
DE19604027C1 (de) * 1996-01-24 1997-10-23 Forschungsverbund Berlin Ev Vorrichtung zur dampfdruckkontrollierten Czochralski-Züchtung von A¶I¶¶I¶¶I¶B¶V¶-Kristallen
CN116314686B (zh) * 2023-03-20 2025-08-05 超威电源集团有限公司 硒化铜铁/碳氮复合碳纳米管负极材料及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2680410A (en) * 1951-01-02 1954-06-08 Standard Oil Co Self-lubricated rotating seal for centrifugal pumps
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2809135A (en) * 1952-07-22 1957-10-08 Sylvania Electric Prod Method of forming p-n junctions in semiconductor material and apparatus therefor
FR1152250A (fr) * 1956-06-07 1958-02-13 Appareil pour le tirage de monocristaux à partir d'une phase liquide
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US2862283A (en) * 1957-05-28 1958-12-02 Russell Mfg Co Anti-friction fabric
NL113205C (fr) * 1958-08-28 1900-01-01

Also Published As

Publication number Publication date
DE1519914B2 (de) 1971-02-11
US3154384A (en) 1964-10-27
BE602573A (fr) 1961-10-13
DE1519914A1 (de) 1970-02-19
GB990163A (en) 1965-04-28

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