MY8700637A - Wafer and method of working the same - Google Patents

Wafer and method of working the same

Info

Publication number
MY8700637A
MY8700637A MY637/87A MY8700637A MY8700637A MY 8700637 A MY8700637 A MY 8700637A MY 637/87 A MY637/87 A MY 637/87A MY 8700637 A MY8700637 A MY 8700637A MY 8700637 A MY8700637 A MY 8700637A
Authority
MY
Malaysia
Prior art keywords
wafer
working
same
Prior art date
Application number
MY637/87A
Other languages
English (en)
Inventor
Higashi Maejima
Hiroshi Nishizuka
Sususmu Komoriya
Etuo Egashira
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of MY8700637A publication Critical patent/MY8700637A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • B24D5/02—Wheels in one piece
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y10T428/219—Edge structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
MY637/87A 1982-07-30 1987-12-30 Wafer and method of working the same MY8700637A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131949A JPH0624199B2 (ja) 1982-07-30 1982-07-30 ウエハの加工方法

Publications (1)

Publication Number Publication Date
MY8700637A true MY8700637A (en) 1987-12-31

Family

ID=15069972

Family Applications (1)

Application Number Title Priority Date Filing Date
MY637/87A MY8700637A (en) 1982-07-30 1987-12-30 Wafer and method of working the same

Country Status (10)

Country Link
US (1) US4783225A (ja)
JP (1) JPH0624199B2 (ja)
KR (1) KR900006775B1 (ja)
DE (1) DE3326356C3 (ja)
FR (1) FR2531108B1 (ja)
GB (1) GB2126008B (ja)
HK (1) HK69487A (ja)
IT (1) IT1163869B (ja)
MY (1) MY8700637A (ja)
SG (1) SG41787G (ja)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279992A (en) * 1982-07-30 1994-01-18 Hitachi, Ltd. Method of producing a wafer having a curved notch
US5230747A (en) * 1982-07-30 1993-07-27 Hitachi, Ltd. Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer
US4579760A (en) * 1985-01-08 1986-04-01 International Business Machines Corporation Wafer shape and method of making same
JPS62239517A (ja) * 1986-04-10 1987-10-20 Nec Corp 半導体基板
JPH0624179B2 (ja) * 1989-04-17 1994-03-30 信越半導体株式会社 半導体シリコンウェーハおよびその製造方法
JPH0624200B2 (ja) * 1989-04-28 1994-03-30 信越半導体株式会社 半導体デバイス用基板の加工方法
US5036624A (en) * 1989-06-21 1991-08-06 Silicon Technology Corporation Notch grinder
JP2742710B2 (ja) * 1989-06-26 1998-04-22 三菱電機株式会社 半導体ウェハ
JPH04113619A (ja) * 1990-09-03 1992-04-15 Mitsubishi Materials Corp ウェーハおよびその製造方法
JP2559650B2 (ja) * 1991-11-27 1996-12-04 信越半導体株式会社 ウエーハ面取部研磨装置
KR0185234B1 (ko) * 1991-11-28 1999-04-15 가부시키 가이샤 토쿄 세이미쯔 반도체 웨이퍼의 모떼기 방법
JPH07205001A (ja) * 1993-11-16 1995-08-08 Tokyo Seimitsu Co Ltd ウェーハ面取り機
JP2827885B2 (ja) * 1994-02-12 1998-11-25 信越半導体株式会社 半導体単結晶基板およびその製造方法
US5529051A (en) * 1994-07-26 1996-06-25 At&T Corp. Method of preparing silicon wafers
US5510623A (en) * 1995-02-24 1996-04-23 Loral Fairchild Corp. Center readout intra-oral image sensor
JP3336866B2 (ja) * 1996-08-27 2002-10-21 信越半導体株式会社 気相成長用シリコン単結晶基板の製造方法
JP2000254845A (ja) * 1999-03-10 2000-09-19 Nippei Toyama Corp ウエーハのノッチ溝の面取り方法及びウエーハ
MY127032A (en) * 1999-12-28 2006-11-30 Hitachi Metals Ltd Work chamfering apparatus and work chamfering method
US6361405B1 (en) * 2000-04-06 2002-03-26 Applied Materials, Inc. Utility wafer for chemical mechanical polishing
US6804086B2 (en) 2000-04-27 2004-10-12 Seagate Technology Llc Unitary crystalline slider with edges rounded by laser ablation
US6787891B2 (en) * 2000-12-06 2004-09-07 Medtronic, Inc. Freeform substrates and devices
US20020074633A1 (en) * 2000-12-18 2002-06-20 Larson Lary R. Interconnection of active and passive components in substrate
JP2007189093A (ja) * 2006-01-13 2007-07-26 Disco Abrasive Syst Ltd 半導体ウエーハ
TWI314758B (en) * 2006-04-20 2009-09-11 Touch Micro System Tech Wafer having an asymmetric edge profile and method of making the same
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
JP6645502B2 (ja) * 2015-07-24 2020-02-14 Ａｇｃ株式会社 ガラス基板、積層基板、積層基板の製造方法、積層体、梱包体、およびガラス基板の製造方法
JP2017190279A (ja) * 2016-04-15 2017-10-19 住友金属鉱山株式会社 非磁性ガーネット基板の製造方法
CN119748673A (zh) * 2025-01-14 2025-04-04 北京中旗方凯科技有限公司 一种生产半导体晶片的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1095952B (de) * 1958-08-04 1960-12-29 Philips Nv Verfahren zur Herstellung von gleich langen Halbleiterstreifen aus einem homogenen einkristallinen Halbleiterstab fuer mehrere Halbleiteranordnungen
NL256387A (ja) * 1960-09-29
US3951728A (en) * 1974-07-30 1976-04-20 Hitachi, Ltd. Method of treating semiconductor wafers
JPS5846858B2 (ja) * 1975-11-13 1983-10-19 日本電気ホームエレクトロニクス株式会社 ハンドウタイソウチノセイゾウホウホウ
JPS5338594A (en) * 1976-09-20 1978-04-08 Rakuton Kagaku Kougiyou Kk Baits for angling
US4228937A (en) * 1979-03-29 1980-10-21 Rca Corporation Cleaving apparatus
US4344260A (en) * 1979-07-13 1982-08-17 Nagano Electronics Industrial Co., Ltd. Method for precision shaping of wafer materials
US4256229A (en) * 1979-09-17 1981-03-17 Rockwell International Corporation Boat for wafer processing
JPS56105638A (en) * 1980-01-26 1981-08-22 Sumitomo Electric Ind Ltd Manufacture of circular gallium arsenide wafer
JPS5743410A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Manufacture of semiconductor device
JPS5823430A (ja) * 1981-08-04 1983-02-12 Nec Kyushu Ltd 半導体ウエハ−ス
JPH05338594A (ja) * 1992-06-11 1993-12-21 Mitsubishi Heavy Ind Ltd 飛行訓練安全監視装置

Also Published As

Publication number Publication date
HK69487A (en) 1987-10-02
JPH0624199B2 (ja) 1994-03-30
IT1163869B (it) 1987-04-08
FR2531108B1 (fr) 1987-05-07
DE3326356C2 (ja) 1993-07-01
JPS5923524A (ja) 1984-02-07
DE3326356C3 (de) 1998-06-10
DE3326356A1 (de) 1984-02-09
GB2126008B (en) 1986-08-06
FR2531108A1 (fr) 1984-02-03
US4783225A (en) 1988-11-08
IT8322321A0 (it) 1983-07-29
GB2126008A (en) 1984-03-14
KR840005383A (ko) 1984-11-12
GB8320110D0 (en) 1983-08-24
KR900006775B1 (ko) 1990-09-21
SG41787G (en) 1987-07-17

Similar Documents

Publication Publication Date Title
GB2126008B (en) Wafer and method of working the same
DE3361832D1 (en) Semiconductor ic and method of making the same
DE3378872D1 (en) Semiconductor devices and method for making the same
EP0111899A3 (en) Semiconductor device and method of manufacturing the same
DE3174468D1 (en) Semiconductor device and method of manufacturing the same
DE3473531D1 (en) Method of forming semiconductor devices
PL243597A1 (en) Cable and method of manufacturing the same
JPS57117843A (en) High frequency treating tool
GB2124474B (en) Cookware and method of making the same
DE3376043D1 (en) Semiconductor device and method of making the same
DE3264580D1 (en) Semiconductor device and method of manufacturing the same
GB2129613B (en) Semiconductor structures and manufacturing methods
GB2124827B (en) Thermistor- bolometer and method for the manufacture thereof
DE3278822D1 (en) Electrode and method of producing the same
PL242471A1 (en) Insecticide and method of making the same
GB2119298B (en) Method of abrading surfaces
DE3368348D1 (en) Semiconductor device and method of manufacturing same
EP0110656A3 (en) Semiconductor device and method of manufacturing the same
GB2115220B (en) Semiconductor device and method of producing the same
GB2146016B (en) Method for the preparation of haloacetals and halodioxolanes
ZA831548B (en) Herbicidal compositions and method
GB8322843D0 (en) Method of construction
DE3368232D1 (en) Paper block and method of manufacturing the same
PL243387A1 (en) Chisel holder and method of making the same
PL238115A1 (en) Disinfectant-washing agent and method of making the same