NL1000329C2 - Geïntegreerd oscillatorcircuit en werkwijzen voor het vervaardigen, respectievelijk het ontwerpen daarvan. - Google Patents

Geïntegreerd oscillatorcircuit en werkwijzen voor het vervaardigen, respectievelijk het ontwerpen daarvan.

Info

Publication number
NL1000329C2
NL1000329C2 NL1000329A NL1000329A NL1000329C2 NL 1000329 C2 NL1000329 C2 NL 1000329C2 NL 1000329 A NL1000329 A NL 1000329A NL 1000329 A NL1000329 A NL 1000329A NL 1000329 C2 NL1000329 C2 NL 1000329C2
Authority
NL
Netherlands
Prior art keywords
manufacture
design
methods
oscillator circuit
integrated oscillator
Prior art date
Application number
NL1000329A
Other languages
English (en)
Inventor
Gustaaf Borghs
Nicolai Marin
Kristel Fobelets
Steven Brebels
Eric Beyne
Original Assignee
Imec Vzw Interuniversitair Mic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Vzw Interuniversitair Mic filed Critical Imec Vzw Interuniversitair Mic
Priority to NL1000329A priority Critical patent/NL1000329C2/nl
Priority to AT96107063T priority patent/ATE220262T1/de
Priority to DE1996622083 priority patent/DE69622083T2/de
Priority to EP96107063A priority patent/EP0742639B1/en
Priority to US08/646,515 priority patent/US5675295A/en
Application granted granted Critical
Publication of NL1000329C2 publication Critical patent/NL1000329C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/216—Waveguides, e.g. strip lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Waveguide Aerials (AREA)
NL1000329A 1995-05-09 1995-05-09 Geïntegreerd oscillatorcircuit en werkwijzen voor het vervaardigen, respectievelijk het ontwerpen daarvan. NL1000329C2 (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL1000329A NL1000329C2 (nl) 1995-05-09 1995-05-09 Geïntegreerd oscillatorcircuit en werkwijzen voor het vervaardigen, respectievelijk het ontwerpen daarvan.
AT96107063T ATE220262T1 (de) 1995-05-09 1996-05-06 Mikrowellenoszillator, antenne dafür und verfahren zur herstellung
DE1996622083 DE69622083T2 (de) 1995-05-09 1996-05-06 Mikrowellenoszillator, Antenne dafür und Verfahren zur Herstellung
EP96107063A EP0742639B1 (en) 1995-05-09 1996-05-06 Microwave oscillator, an antenna therefor and methods of manufacture
US08/646,515 US5675295A (en) 1995-05-09 1996-05-08 Microwave oscillator, an antenna therefor and methods of manufacture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1000329A NL1000329C2 (nl) 1995-05-09 1995-05-09 Geïntegreerd oscillatorcircuit en werkwijzen voor het vervaardigen, respectievelijk het ontwerpen daarvan.
US08/646,515 US5675295A (en) 1995-05-09 1996-05-08 Microwave oscillator, an antenna therefor and methods of manufacture

Publications (1)

Publication Number Publication Date
NL1000329C2 true NL1000329C2 (nl) 1996-11-12

Family

ID=26642069

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1000329A NL1000329C2 (nl) 1995-05-09 1995-05-09 Geïntegreerd oscillatorcircuit en werkwijzen voor het vervaardigen, respectievelijk het ontwerpen daarvan.

Country Status (3)

Country Link
US (1) US5675295A (nl)
EP (1) EP0742639B1 (nl)
NL (1) NL1000329C2 (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394574A (zh) * 2021-06-17 2021-09-14 网络通信与安全紫金山实验室 一种集成差分天线的太赫兹振荡器及其场路融合方法

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US5751201A (en) * 1996-06-19 1998-05-12 Motorola, Inc. Resonator with metal layers devoid of DC connection and semiconductor device in substrate
US6049308A (en) * 1997-03-27 2000-04-11 Sandia Corporation Integrated resonant tunneling diode based antenna
JP3146260B2 (ja) * 1999-03-05 2001-03-12 郵政省通信総合研究所長 平面放射型発振装置
JP5022549B2 (ja) * 2000-01-28 2012-09-12 アイメック 半導体デバイスを移動、及び、積層させる方法
JP2002124829A (ja) * 2000-10-12 2002-04-26 Murata Mfg Co Ltd 発振器およびそれを用いた電子装置
US6967347B2 (en) * 2001-05-21 2005-11-22 The Regents Of The University Of Colorado Terahertz interconnect system and applications
US6563185B2 (en) * 2001-05-21 2003-05-13 The Regents Of The University Of Colorado High speed electron tunneling device and applications
US7388276B2 (en) * 2001-05-21 2008-06-17 The Regents Of The University Of Colorado Metal-insulator varactor devices
US6566284B2 (en) * 2001-08-07 2003-05-20 Hrl Laboratories, Llc Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio and resonant tunneling diode therefrom
US6657240B1 (en) 2002-01-28 2003-12-02 Taiwan Semiconductoring Manufacturing Company Gate-controlled, negative resistance diode device using band-to-band tunneling
DE10300955B4 (de) * 2003-01-13 2005-10-27 Epcos Ag Radar-Transceiver für Mikrowellen- und Millimeterwellenanwendungen
JP3913253B2 (ja) * 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
JP5129443B2 (ja) * 2004-08-25 2013-01-30 三星電子株式会社 ミリ波及びサブミリ波用電磁波を生成する量子井戸共鳴トンネルジェネレータを安定化するマイクロストリップ
JP5006642B2 (ja) * 2006-05-31 2012-08-22 キヤノン株式会社 テラヘルツ波発振器
US20090181492A1 (en) * 2008-01-11 2009-07-16 Peter Nunan Nano-cleave a thin-film of silicon for solar cell fabrication
JP5366663B2 (ja) * 2008-07-29 2013-12-11 ローム株式会社 テラヘルツ発振素子
JP5717336B2 (ja) 2009-03-27 2015-05-13 キヤノン株式会社 発振器
JP5632599B2 (ja) 2009-09-07 2014-11-26 キヤノン株式会社 発振器
EP2581940A4 (en) * 2010-06-10 2015-12-09 Canon Anelva Corp OSCILLATION ELEMENT AND METHOD FOR PRODUCING THE OSCILLATION ELEMENT
KR101928438B1 (ko) 2012-08-08 2019-02-26 삼성전자주식회사 대전 입자의 진동을 이용한 전자기파 발생기 및 비트 생성기
JP6100024B2 (ja) * 2013-02-27 2017-03-22 キヤノン株式会社 発振素子
US10418940B2 (en) * 2016-12-16 2019-09-17 Intel Corporation Radio frequency interference mitigation in crystal oscillator circuitry
CN110011027A (zh) * 2018-12-28 2019-07-12 瑞声科技(新加坡)有限公司 一种天线、天线阵列和基站
JP7246960B2 (ja) * 2019-02-14 2023-03-28 古河電気工業株式会社 光導波路構造及びその製造方法
CN115548676A (zh) * 2022-08-10 2022-12-30 宁波隔空智能科技有限公司 微带天线组件、雷达收发组件及雷达系统

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US4539528A (en) * 1983-08-31 1985-09-03 Texas Instruments Incorporated Two-port amplifier
US4789645A (en) * 1987-04-20 1988-12-06 Eaton Corporation Method for fabrication of monolithic integrated circuits
EP0296838A2 (en) * 1987-06-26 1988-12-28 Texas Instruments Incorporated Monolithic microwave transmitter/receiver

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US3659222A (en) * 1970-09-01 1972-04-25 Rca Corp High efficiency mode avalanche diode oscillator
US4481487A (en) * 1981-08-14 1984-11-06 Texas Instruments Incorporated Monolithic microwave wide-band VCO
JPS5930309A (ja) * 1982-08-11 1984-02-17 Mitsubishi Electric Corp 電圧同調マイクロ波半導体発振器
JP2614037B2 (ja) * 1985-06-18 1997-05-28 財団法人 半導体研究振興会 超高周波負性抵抗半導体発振器
US5155050A (en) * 1987-06-26 1992-10-13 Texas Instruments Incorporated Method of fabrication of a monolithic microwave transmitter/receiver
US4914407A (en) * 1988-06-07 1990-04-03 Board Of Regents, University Of Texas System Crosstie overlay slow-wave structure and components made thereof for monolithic integrated circuits and optical modulators
US5245745A (en) * 1990-07-11 1993-09-21 Ball Corporation Method of making a thick-film patch antenna structure
JPH04326606A (ja) * 1991-04-26 1992-11-16 Sumitomo Electric Ind Ltd 発振回路
JPH0677729A (ja) * 1992-08-25 1994-03-18 Mitsubishi Electric Corp アンテナ一体化マイクロ波回路
US5339053A (en) * 1993-09-17 1994-08-16 The United States Of America As Represented By The Secretary Of The Army Instant-on microwave oscillators using resonant tunneling diode

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US4539528A (en) * 1983-08-31 1985-09-03 Texas Instruments Incorporated Two-port amplifier
US4789645A (en) * 1987-04-20 1988-12-06 Eaton Corporation Method for fabrication of monolithic integrated circuits
EP0296838A2 (en) * 1987-06-26 1988-12-28 Texas Instruments Incorporated Monolithic microwave transmitter/receiver

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MOUNAIX P ET AL: "INTEGRATION OF A RESONANT-TUNNELING STRUCTURE FOR MICROWAVE APPLICATIONS", JOURNAL DE PHYSIQUE III, vol. 1, no. 4, 1 April 1991 (1991-04-01), pages 539 - 549, XP000224408 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394574A (zh) * 2021-06-17 2021-09-14 网络通信与安全紫金山实验室 一种集成差分天线的太赫兹振荡器及其场路融合方法

Also Published As

Publication number Publication date
US5675295A (en) 1997-10-07
EP0742639A2 (en) 1996-11-13
EP0742639A3 (en) 1997-12-29
EP0742639B1 (en) 2002-07-03

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Legal Events

Date Code Title Description
PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 19991201