NL238657A - - Google Patents

Info

Publication number
NL238657A
NL238657A NL238657DA NL238657A NL 238657 A NL238657 A NL 238657A NL 238657D A NL238657D A NL 238657DA NL 238657 A NL238657 A NL 238657A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL238657A publication Critical patent/NL238657A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00—Compounds of arsenic
    • C01G28/008—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/025—Other inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
    • H01B3/087—Chemical composition of glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/15—Nonoxygen containing chalogenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Glass Compositions (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
NL238657D 1958-04-28 1959-04-29 NL238657A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73083258A 1958-04-28 1958-04-28
US79891259 US2961350A (en) 1958-04-28 1959-03-20 Glass coating of circuit elements

Publications (1)

Publication Number Publication Date
NL238657A true NL238657A (de) 1964-01-27

Family

ID=27112118

Family Applications (1)

Application Number Title Priority Date Filing Date
NL238657D NL238657A (de) 1958-04-28 1959-04-29

Country Status (8)

Country Link
US (1) US2961350A (de)
BE (1) BE578161A (de)
CH (1) CH387175A (de)
DE (1) DE1179277B (de)
ES (1) ES249413A1 (de)
FR (1) FR1226008A (de)
GB (1) GB923338A (de)
NL (1) NL238657A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200310A (en) * 1959-09-22 1965-08-10 Carman Lab Inc Glass encapsulated semiconductor device
NL123202C (de) * 1960-04-22
US3170813A (en) * 1961-05-19 1965-02-23 Westinghouse Electric Corp Method for encapsulating semiconductors
US3251918A (en) * 1961-06-14 1966-05-17 Du Pont Process for making a capacitor element for high temperature operation
US3189799A (en) * 1961-06-14 1965-06-15 Microwave Ass Semiconductor devices and method of fabricating them
US3546013A (en) * 1961-09-29 1970-12-08 Ibm Method of providing protective coverings for semiconductors
US3212921A (en) * 1961-09-29 1965-10-19 Ibm Method of forming a glass film on an object and the product produced thereby
NL284820A (de) * 1961-11-06
US3340438A (en) * 1965-04-05 1967-09-05 Ibm Encapsulation of electronic modules
GB1054450A (de) * 1963-09-26 1900-01-01
US4198444A (en) * 1975-08-04 1980-04-15 General Electric Company Method for providing substantially hermetic sealing means for electronic components
JPS5683050A (en) * 1979-12-12 1981-07-07 Toshiba Corp Semiconductor device
US5112776A (en) * 1988-11-10 1992-05-12 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
US5244841A (en) * 1988-11-10 1993-09-14 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
DE68926344T2 (de) * 1988-11-10 1996-09-05 Applied Materials Inc Planarisationsmethode für IC-Struktur
US5204288A (en) * 1988-11-10 1993-04-20 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material
US5958100A (en) * 1993-06-03 1999-09-28 Micron Technology, Inc. Process of making a glass semiconductor package
WO2003088354A2 (de) 2002-04-15 2003-10-23 Schott Ag Verfahren zur herstellung eines kopierschutzes für eine elektronische schaltung und entsprechendes bauteil
DE50309735D1 (de) * 2002-04-15 2008-06-12 Schott Ag Verfahren zur gehäusebildung bei elektronischen bauteilen so wie so hermetisch verkapselte elektronische bauteile
AU2003245876A1 (en) * 2002-04-15 2003-10-27 Schott Ag Method for forming housings for electronic components and electronic components that are hermetically encapsulated thereby
US6925781B1 (en) 2004-02-03 2005-08-09 Playtex Products, Inc. Integrated cutting tool for waste disposal method and apparatus
JP6505975B2 (ja) 2013-03-15 2019-04-24 スコット コーポレーションSchott Corporation 赤外光学用の低軟化点光学ガラスを用いたオプティカルボンディング及び形成された製造物
EP3724621A4 (de) * 2017-12-11 2021-12-01 SCHOTT Corporation Athermische gläser und athermische systeme für infrarotoptik

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE597244C (de) * 1930-07-24 1934-05-19 Porzellanfabrik Ph Rosenthal & Verfahren zur Herstellung elektrischer Widerstaende
DE765307C (de) * 1938-07-29 1954-08-16 Siemens Schuckertwerke A G Leicht schmelzbares siliciumfreies Glas
US2706692A (en) * 1951-12-07 1955-04-19 Poor & Co Method of bonding vitreous enamels and articles produced thereby
US2883295A (en) * 1958-02-24 1959-04-21 Servo Corp Of America Glass composition

Also Published As

Publication number Publication date
CH387175A (de) 1965-01-31
ES249413A1 (es) 1959-12-01
FR1226008A (fr) 1960-07-06
GB923338A (en) 1963-04-10
DE1179277B (de) 1964-10-08
BE578161A (fr) 1959-08-17
US2961350A (en) 1960-11-22

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