NL6907831A - - Google Patents

Info

Publication number
NL6907831A
NL6907831A NL6907831A NL6907831A NL6907831A NL 6907831 A NL6907831 A NL 6907831A NL 6907831 A NL6907831 A NL 6907831A NL 6907831 A NL6907831 A NL 6907831A NL 6907831 A NL6907831 A NL 6907831A
Authority
NL
Netherlands
Application number
NL6907831A
Other versions
NL157662B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6907831.A priority Critical patent/NL157662B/xx
Priority to US00034489A priority patent/US3721592A/en
Priority to CA082622A priority patent/CA933019A/en
Priority to AT444570A priority patent/AT318004B/de
Priority to CH739970A priority patent/CH544159A/de
Priority to GB2422270A priority patent/GB1311509A/en
Priority to JP45042811A priority patent/JPS4843249B1/ja
Priority to DE2024608A priority patent/DE2024608C3/de
Priority to BE750761D priority patent/BE750761A/fr
Priority to FR7018478A priority patent/FR2048615A5/fr
Publication of NL6907831A publication Critical patent/NL6907831A/xx
Publication of NL157662B publication Critical patent/NL157662B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)
NL6907831.A 1969-05-22 1969-05-22 Werkwijze voor het etsen van een oppervlak onder toepassing van een etsmasker, alsmede voorwerpen, verkregen door toepassing van deze werkwijze. NL157662B (nl)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NL6907831.A NL157662B (nl) 1969-05-22 1969-05-22 Werkwijze voor het etsen van een oppervlak onder toepassing van een etsmasker, alsmede voorwerpen, verkregen door toepassing van deze werkwijze.
US00034489A US3721592A (en) 1969-05-22 1970-05-04 Etching method employing an etching mask while suppressing underetching
CA082622A CA933019A (en) 1969-05-22 1970-05-13 Etching method employing an etching mask while suppressing underetching
AT444570A AT318004B (de) 1969-05-22 1970-05-19 Verfahren zum Ätzen von Oberflächen unter Verwendung einer Ätzmaske
CH739970A CH544159A (de) 1969-05-22 1970-05-19 Verfahren zum Ätzen von Oberflächen unter Verwendung einer Ätzmaske
GB2422270A GB1311509A (en) 1969-05-22 1970-05-19 Etching methods
JP45042811A JPS4843249B1 (fr) 1969-05-22 1970-05-20
DE2024608A DE2024608C3 (de) 1969-05-22 1970-05-20 Verfahren zum Ätzen der Oberfläche eines Gegenstandes
BE750761D BE750761A (fr) 1969-05-22 1970-05-21 Procede de decapage a l'aide d'un masque evitant le risque de decapage marginal
FR7018478A FR2048615A5 (fr) 1969-05-22 1970-05-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6907831.A NL157662B (nl) 1969-05-22 1969-05-22 Werkwijze voor het etsen van een oppervlak onder toepassing van een etsmasker, alsmede voorwerpen, verkregen door toepassing van deze werkwijze.

Publications (2)

Publication Number Publication Date
NL6907831A true NL6907831A (fr) 1970-11-24
NL157662B NL157662B (nl) 1978-08-15

Family

ID=19806987

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6907831.A NL157662B (nl) 1969-05-22 1969-05-22 Werkwijze voor het etsen van een oppervlak onder toepassing van een etsmasker, alsmede voorwerpen, verkregen door toepassing van deze werkwijze.

Country Status (10)

Country Link
US (1) US3721592A (fr)
JP (1) JPS4843249B1 (fr)
AT (1) AT318004B (fr)
BE (1) BE750761A (fr)
CA (1) CA933019A (fr)
CH (1) CH544159A (fr)
DE (1) DE2024608C3 (fr)
FR (1) FR2048615A5 (fr)
GB (1) GB1311509A (fr)
NL (1) NL157662B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313177B2 (fr) * 1973-06-20 1978-05-08
GB1437112A (en) * 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
US3955981A (en) * 1975-01-06 1976-05-11 Zenith Radio Corporation Method of forming electron-transmissive apertures in a color selection mask by photoetching with two resist layers
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
JPS54115085A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
DE3035859A1 (de) * 1980-09-23 1982-05-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur aetztechnischen und/oder galvanischen herstellung von ringzonen in engen bohrungen
DE3273637D1 (en) * 1982-04-19 1986-11-13 Lovejoy Ind Inc Method for shaping and finishing a workpiece
DE3343704A1 (de) * 1983-12-02 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum aetzen von lochrasterplatten, insbesondere fuer plasma-kathoden-display
US4631113A (en) * 1985-12-23 1986-12-23 Signetics Corporation Method for manufacturing a narrow line of photosensitive material
US4759821A (en) * 1986-08-19 1988-07-26 International Business Machines Corporation Process for preparing a vertically differentiated transistor device
DE3806287A1 (de) * 1988-02-27 1989-09-07 Asea Brown Boveri Aetzverfahren zur strukturierung einer mehrschicht-metallisierung
FR2683944B1 (fr) * 1991-11-14 1994-02-18 Sgs Thomson Microelectronics Sa Procede de gravure d'un sillon profond.
FR2702306B1 (fr) * 1993-03-05 1995-04-14 Alcatel Nv Procédé d'auto-alignement d'un contact métallique sur un substrat de matériau semi-conducteur.
US6361703B1 (en) * 1999-03-04 2002-03-26 Caterpillar Inc. Process for micro-texturing a mold
TWI234819B (en) * 2003-05-06 2005-06-21 Walsin Lihwa Corp Selective etch method for side wall protection and structure formed using the method

Also Published As

Publication number Publication date
DE2024608C3 (de) 1980-05-29
US3721592A (en) 1973-03-20
JPS4843249B1 (fr) 1973-12-18
FR2048615A5 (fr) 1971-03-19
AT318004B (de) 1974-09-25
NL157662B (nl) 1978-08-15
GB1311509A (en) 1973-03-28
DE2024608B2 (de) 1979-09-06
CH544159A (de) 1973-11-15
DE2024608A1 (de) 1970-11-26
BE750761A (fr) 1970-11-23
CA933019A (en) 1973-09-04

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS