NL7801879A - Halfgeleidergeheugen. - Google Patents

Halfgeleidergeheugen.

Info

Publication number: NL7801879A
Authority: NL; Netherlands
Prior art keywords: semiconductor memory; semiconductor; memory
Prior art date: 1977-02-21

Application number

NL7801879A

Other languages

English (en)

Other versions

NL191683C (nl

NL191683B (nl

Original Assignee

Zaidan Hojin Handotai Kenkyu

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-02-21

Filing date

1978-02-20

Publication date

1978-08-23

1977-02-21 Priority claimed from JP1846577A external-priority patent/JPS53103330A/ja

1977-02-26 Priority claimed from JP52020653A external-priority patent/JPS5852348B2/ja

1977-03-30 Priority claimed from JP52035956A external-priority patent/JPS5837995B2/ja

1977-03-31 Priority claimed from JP3630477A external-priority patent/JPS53121528A/ja

1977-04-02 Priority claimed from JP3790577A external-priority patent/JPS53123040A/ja

1977-07-11 Priority claimed from JP8322677A external-priority patent/JPS5418284A/ja

1978-02-20 Application filed by Zaidan Hojin Handotai Kenkyu filed Critical Zaidan Hojin Handotai Kenkyu

1978-08-23 Publication of NL7801879A publication Critical patent/NL7801879A/nl

1995-03-16 Priority to NL9500518A priority Critical patent/NL9500518A/nl

1995-10-02 Publication of NL191683B publication Critical patent/NL191683B/nl

1996-02-05 Application granted granted Critical

1996-02-05 Publication of NL191683C publication Critical patent/NL191683C/nl

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/10—DRAM devices comprising bipolar components
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Non-Volatile Memory (AREA)

NL7801879A 1977-02-21 1978-02-20 Halfgeleidergeheugenschakeling. NL191683C (nl)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
NL9500518A NL9500518A (nl)	1977-02-21	1995-03-16	Halfgeleidergeheugenschakeling.

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
JP1846577A JPS53103330A (en)	1977-02-21	1977-02-21	Semiconductor memory
JP52020653A JPS5852348B2 (ja)	1977-02-26	1977-02-26	半導体メモリ
JP52035956A JPS5837995B2 (ja)	1977-03-30	1977-03-30	半導体メモリ
JP3630477A JPS53121528A (en)	1977-03-31	1977-03-31	Semiconductor memory
JP3790577A JPS53123040A (en)	1977-04-02	1977-04-02	Semiconductor memory
JP8322677A JPS5418284A (en)	1977-07-11	1977-07-11	Semiconductor memory

Publications (3)

Publication Number	Publication Date
NL7801879A true NL7801879A (nl)	1978-08-23
NL191683B NL191683B (nl)	1995-10-02
NL191683C NL191683C (nl)	1996-02-05

Family

ID=27548791

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7801879A NL191683C (nl)	1977-02-21	1978-02-20	Halfgeleidergeheugenschakeling.

Country Status (5)

Country	Link
US (3)	US4434433A (nl)
DE (1)	DE2807181C2 (nl)
FR (1)	FR2381373B1 (nl)
GB (1)	GB1602361A (nl)
NL (1)	NL191683C (nl)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5808328A (en) *	1977-02-21	1998-09-15	Zaidan Hojin Handotai Kenkyu Shinkokai	High-speed and high-density semiconductor memory
DE2820913A1 (de) *	1977-05-15	1978-11-23	Zaidan Hojin Handotai Kenkyu	Integrierte halbleitervorrichtung
US4284997A (en) *	1977-07-07	1981-08-18	Zaidan Hojin Handotai Kenkyu Shinkokai	Static induction transistor and its applied devices
JPS5466080A (en) *	1977-11-05	1979-05-28	Nippon Gakki Seizo Kk	Semiconductor device
JPS54145486A (en) *	1978-05-08	1979-11-13	Handotai Kenkyu Shinkokai	Gaas semiconductor device
JPS5599765A (en) *	1979-01-25	1980-07-30	Nec Corp	Mos memory device
DE3065928D1 (en) *	1979-01-25	1984-01-26	Nec Corp	Semiconductor memory device
JPS55115355A (en) *	1979-02-28	1980-09-05	Nec Corp	Mos type memory
JPS55103756A (en) *	1979-01-31	1980-08-08	Semiconductor Res Found	Electrostatic induction transistor integrated circuit
FR2480502A1 (fr) *	1980-04-14	1981-10-16	Thomson Csf	Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
FR2480501A1 (fr) *	1980-04-14	1981-10-16	Thomson Csf	Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication
FR2480505A1 (fr) *	1980-04-14	1981-10-16	Thomson Csf	Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication
EP0055110A3 (en) *	1980-12-22	1984-11-14	Texas Instruments Incorporated	Nonvolatile high density jfet ram cell
JPS57173978A (en) *	1981-04-21	1982-10-26	Nippon Gakki Seizo Kk	Integrated circuit device
NL8103376A (nl) *	1981-07-16	1983-02-16	Philips Nv	Weergeefinrichting.
US4624046A (en) *	1982-01-04	1986-11-25	Fairchild Camera & Instrument Corp.	Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
JPS58154256A (ja) *	1982-03-10	1983-09-13	Hitachi Ltd	半導体装置
US4528745A (en) *	1982-07-13	1985-07-16	Toyo Denki Seizo Kabushiki Kaisha	Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques
EP0126292B1 (en) *	1983-04-21	1987-12-02	Kabushiki Kaisha Toshiba	Semiconductor device having an element isolation layer and method of manufacturing the same
KR920010461B1 (ko) *	1983-09-28	1992-11-28	가부시끼가이샤 히다찌세이사꾸쇼	반도체 메모리와 그 제조 방법
USRE33261E (en) *	1984-07-03	1990-07-10	Texas Instruments, Incorporated	Trench capacitor for high density dynamic RAM
JPS6147662A (ja) *	1984-08-15	1986-03-08	Olympus Optical Co Ltd	固体撮像装置
US5208657A (en) *	1984-08-31	1993-05-04	Texas Instruments Incorporated	DRAM Cell with trench capacitor and vertical channel in substrate
JPH0793365B2 (ja) *	1984-09-11	1995-10-09	株式会社東芝	半導体記憶装置およびその製造方法
US4824793A (en) *	1984-09-27	1989-04-25	Texas Instruments Incorporated	Method of making DRAM cell with trench capacitor
US5225697A (en) *	1984-09-27	1993-07-06	Texas Instruments, Incorporated	dRAM cell and method
US5102817A (en) *	1985-03-21	1992-04-07	Texas Instruments Incorporated	Vertical DRAM cell and method
JPS62114265A (ja) *	1985-11-13	1987-05-26	Mitsubishi Electric Corp	半導体記憶装置
JPS62219966A (ja) *	1986-03-22	1987-09-28	Toshiba Corp	半導体装置
US4829017A (en) *	1986-09-25	1989-05-09	Texas Instruments Incorporated	Method for lubricating a high capacity dram cell
US4786958A (en) *	1986-11-17	1988-11-22	General Motors Corporation	Lateral dual gate thyristor and method of fabricating same
US5109259A (en) *	1987-09-22	1992-04-28	Texas Instruments Incorporated	Multiple DRAM cells in a trench
US4861731A (en) *	1988-02-02	1989-08-29	General Motors Corporation	Method of fabricating a lateral dual gate thyristor
JP2655859B2 (ja) *	1988-02-03	1997-09-24	株式会社日立製作所	半導体記憶装置
US5103276A (en) *	1988-06-01	1992-04-07	Texas Instruments Incorporated	High performance composed pillar dram cell
US5225363A (en) *	1988-06-28	1993-07-06	Texas Instruments Incorporated	Trench capacitor DRAM cell and method of manufacture
US5105245A (en) *	1988-06-28	1992-04-14	Texas Instruments Incorporated	Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US4910709A (en) *	1988-08-10	1990-03-20	International Business Machines Corporation	Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
US5051796A (en) *	1988-11-10	1991-09-24	Texas Instruments Incorporated	Cross-point contact-free array with a high-density floating-gate structure
US5238855A (en) *	1988-11-10	1993-08-24	Texas Instruments Incorporated	Cross-point contact-free array with a high-density floating-gate structure
US5850093A (en) *	1989-11-20	1998-12-15	Tarng; Huang Chang	Uni-directional flash device
JP3469251B2 (ja) *	1990-02-14	2003-11-25	株式会社東芝	半導体装置の製造方法
KR940007651B1 (ko) *	1990-04-06	1994-08-22	마쯔시다덴기산교 가부시기가이샤	반도체메모리소자
JPH04188869A (ja) *	1990-11-22	1992-07-07	Mitsubishi Electric Corp	接合型電界効果トランジスタとキャパシタとを含む半導体記憶装置およびその製造方法
JP3202223B2 (ja) *	1990-11-27	2001-08-27	日本電気株式会社	トランジスタの製造方法
KR940002835B1 (ko) *	1991-04-17	1994-04-04	재단법인 한국전자통신연구소	접합전계형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조
US5208172A (en) *	1992-03-02	1993-05-04	Motorola, Inc.	Method for forming a raised vertical transistor
JP3229012B2 (ja) *	1992-05-21	2001-11-12	株式会社東芝	半導体装置の製造方法
BE1007475A3 (nl) *	1993-09-06	1995-07-11	Philips Electronics Nv	Halfgeleiderinrichting met een niet-vluchtig geheugen en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
GB9421138D0 (en) *	1994-10-20	1994-12-07	Hitachi Europ Ltd	Memory device
EP0726603B1 (en) *	1995-02-10	1999-04-21	SILICONIX Incorporated	Trenched field effect transistor with PN depletion barrier
JPH11191596A (ja) *	1997-04-02	1999-07-13	Sony Corp	半導体メモリセル及びその製造方法
US6204529B1 (en) *	1999-08-27	2001-03-20	Hsing Lan Lung	8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate
US6507063B2 (en) *	2000-04-17	2003-01-14	International Business Machines Corporation	Poly-poly/MOS capacitor having a gate encapsulating first electrode layer
JP4226205B2 (ja) *	2000-08-11	2009-02-18	富士雄舛岡	半導体記憶装置の製造方法
US6784483B2 (en) *	2002-09-04	2004-08-31	Macronix International Co., Ltd.	Method for preventing hole and electron movement in NROM devices
JP2004111478A (ja) *	2002-09-13	2004-04-08	Sharp Corp	不揮発性半導体記憶装置およびその製造方法
US6887768B1 (en) *	2003-05-15	2005-05-03	Lovoltech, Inc.	Method and structure for composite trench fill
US7288809B1 (en) *	2003-12-16	2007-10-30	Spansion Llc	Flash memory with buried bit lines
US7315474B2 (en) *	2005-01-03	2008-01-01	Macronix International Co., Ltd	Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
DE102011003456A1 (de) *	2011-02-01	2012-08-02	Robert Bosch Gmbh	Halbleiteranordnung mit reduziertem Einschaltwiderstand

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2930950A (en) *	1956-12-10	1960-03-29	Teszner Stanislas	High power field-effect transistor
DE1514431C3 (de) *	1965-04-07	1974-08-22	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität
US3428875A (en) *	1966-10-03	1969-02-18	Fairchild Camera Instr Co	Variable threshold insulated gate field effect device
US3387286A (en) *	1967-07-14	1968-06-04	Ibm	Field-effect transistor memory
JPS4844585B1 (nl) *	1969-04-12	1973-12-25
US3676715A (en)	1970-06-26	1972-07-11	Bell Telephone Labor Inc	Semiconductor apparatus for image sensing and dynamic storage
US3720922A (en) *	1971-03-17	1973-03-13	Rca Corp	Charge coupled memory
US4014036A (en)	1971-07-06	1977-03-22	Ibm Corporation	Single-electrode charge-coupled random access memory cell
US3740621A (en) *	1971-08-30	1973-06-19	Rca Corp	Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
BE789501A (fr) *	1971-09-30	1973-03-29	Siemens Ag	Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur
DE2333400C2 (de) *	1972-06-30	1982-05-13	Sony Corp., Tokyo	Sperrschicht-Feldeffekttransistor
US3876992A (en)	1972-11-01	1975-04-08	Ibm	Bipolar transistor memory with capacitive storage
US3811076A (en) *	1973-01-02	1974-05-14	Ibm	Field effect transistor integrated circuit and memory
US3982264A (en)	1973-04-25	1976-09-21	Sony Corporation	Junction gated field effect transistor
JPS5066184A (nl)	1973-10-12	1975-06-04
US3978459A (en) *	1975-04-21	1976-08-31	Intel Corporation	High density mos memory array
US4012757A (en) *	1975-05-05	1977-03-15	Intel Corporation	Contactless random-access memory cell and cell pair
US4000413A (en) *	1975-05-27	1976-12-28	Intel Corporation	Mos-ram
US3986180A (en)	1975-09-22	1976-10-12	International Business Machines Corporation	Depletion mode field effect transistor memory system
US4003036A (en) *	1975-10-23	1977-01-11	American Micro-Systems, Inc.	Single IGFET memory cell with buried storage element
US4115914A (en)	1976-03-26	1978-09-26	Hughes Aircraft Company	Electrically erasable non-volatile semiconductor memory
US4064492A (en)	1976-10-05	1977-12-20	Schuermeyer Fritz L	Virtually nonvolatile random access memory cell
US4187602A (en) *	1976-12-27	1980-02-12	Texas Instruments Incorporated	Static memory cell using field implanted resistance
NL7700879A (nl) *	1977-01-28	1978-08-01	Philips Nv	Halfgeleiderinrichting.
NL7701172A (nl) *	1977-02-04	1978-08-08	Philips Nv	Halfgeleidergeheugeninrichting.
US4135289A (en)	1977-08-23	1979-01-23	Bell Telephone Laboratories, Incorporated	Method for producing a buried junction memory device
US4471368A (en) *	1977-10-13	1984-09-11	Mohsen Amr M	Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor
US4245231A (en) *	1978-12-26	1981-01-13	Motorola Inc.	Combination capacitor and transistor structure for use in monolithic circuits
US4364075A (en) *	1980-09-02	1982-12-14	Intel Corporation	CMOS Dynamic RAM cell and method of fabrication
JPS6058781A (ja) *	1983-09-09	1985-04-04	Olympus Optical Co Ltd	固体撮像装置
US4791611A (en) *	1985-09-11	1988-12-13	University Of Waterloo	VLSI dynamic memory
US4864374A (en) *	1987-11-30	1989-09-05	Texas Instruments Incorporated	Two-transistor dram cell with high alpha particle immunity

1978
- 1978-02-20 NL NL7801879A patent/NL191683C/nl not_active IP Right Cessation
- 1978-02-20 GB GB6699/78A patent/GB1602361A/en not_active Expired
- 1978-02-20 DE DE2807181A patent/DE2807181C2/de not_active Expired
- 1978-02-21 FR FR7804914A patent/FR2381373B1/fr not_active Expired
1980
- 1980-08-04 US US06/174,724 patent/US4434433A/en not_active Expired - Lifetime
1987
- 1987-08-17 US US07/087,974 patent/US4994999A/en not_active Expired - Lifetime
1992
- 1992-02-24 US US07/839,704 patent/US5883406A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
FR2381373A1 (fr)	1978-09-15
US5883406A (en)	1999-03-16
FR2381373B1 (fr)	1987-11-06
US4994999A (en)	1991-02-19
GB1602361A (en)	1981-11-11
US4434433A (en)	1984-02-28
DE2807181A1 (de)	1978-08-31
NL191683C (nl)	1996-02-05
DE2807181C2 (de)	1985-11-28
NL191683B (nl)	1995-10-02

Legal Events

Date	Code	Title	Description
1979-07-25	BB	A search report has been drawn up
1981-03-25	BC	A request for examination has been filed
1985-01-01	A85	Still pending on 85-01-01
1998-05-06	V4	Discontinued because of reaching the maximum lifetime of a patent	Free format text: 980220

Publication	Publication Date	Title
NL7801879A (nl)	1978-08-23	Halfgeleidergeheugen.
IT7820837A0 (it)	1978-03-03	Memoria semiconduttrice.
NL7707297A (nl)	1978-01-09	Halfgeleider-geheugeninrichting.
IT1084379B (it)	1985-05-25	Procedimento di piroscissione.
NL191914C (nl)	1996-10-04	Halfgeleiderinrichting.
IT7819704A0 (it)	1978-01-27	Dispositivo semiconduttore perfezionato.
NL7704864A (nl)	1977-11-08	Halfgeleidergeheugen.
NL178729C (nl)	1986-05-01	Halfgeleidergeheugen.
IT7819600A0 (it)	1978-01-25	Dispositivo semiconduttore.
NL179244C (nl)	1986-08-01	Halfgeleidergeheugen.
NL7709931A (nl)	1978-03-14	Halfgeleider-geheugeninrichting.
NL7808060A (nl)	1979-02-13	Halfgeleiderelement.
NL7809899A (nl)	1979-04-03	Geheugencel.
NL7806294A (nl)	1978-12-12	Geintegreerde halfgeleider -geheugeninrichting.
IT7823559A0 (it)	1978-05-18	Procedimento di incapsulamento.
DE3072204D1 (de)	1992-12-17	Halbleiterspeicheranordnung.
NL7607984A (nl)	1977-01-25	Halfgeleidergeheugen.
NL7701172A (nl)	1978-08-08	Halfgeleidergeheugeninrichting.
NL7710360A (nl)	1978-03-28	Halfgeleidergeheugen.
DD130698A5 (de)	1978-04-19	Halbleiterspeicher
IT7831321A0 (it)	1978-12-27	Dispositivo semiconduttore.
IT8023529A0 (it)	1980-07-18	Struttura semiconduttrice.
NL7811807A (nl)	1979-06-07	Laterale halfgeleiderinrichtingen.
NL181612C (nl)	1988-03-16	Halfgeleiderinrichting.
NL7901262A (nl)	1979-08-21	Geheugeninrichting.