NL8004990A - Foto-galvanische elementen. - Google Patents

Foto-galvanische elementen. Download PDF

Info

Publication number: NL8004990A
Authority: NL; Netherlands
Prior art keywords: cds; type semiconductor; semiconductor material; indium; silicon
Prior art date: 1979-09-10

Application number

NL8004990A

Other languages

English (en)

Dutch (nl)

Original Assignee

Eni Ente Naz Idrocarb

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-09-10

Filing date

1980-09-03

Publication date

1981-03-12

1980-09-03 Application filed by Eni Ente Naz Idrocarb filed Critical Eni Ente Naz Idrocarb

1981-03-12 Publication of NL8004990A publication Critical patent/NL8004990A/nl

Links

APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 18
229910052738 indium Inorganic materials 0.000 claims description 17
239000000463 material Substances 0.000 claims description 16
239000004065 semiconductor Substances 0.000 claims description 14
238000001704 evaporation Methods 0.000 claims description 13
230000008020 evaporation Effects 0.000 claims description 12
229910052717 sulfur Inorganic materials 0.000 claims description 12
229910052793 cadmium Inorganic materials 0.000 claims description 9
229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
229910052980 cadmium sulfide Inorganic materials 0.000 description 34
239000010410 layer Substances 0.000 description 22
229910052710 silicon Inorganic materials 0.000 description 17
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
239000010703 silicon Substances 0.000 description 16
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 13
239000000758 substrate Substances 0.000 description 13
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
239000011593 sulfur Substances 0.000 description 11
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 10
238000000034 method Methods 0.000 description 10
238000006243 chemical reaction Methods 0.000 description 9
239000010453 quartz Substances 0.000 description 9
230000007704 transition Effects 0.000 description 8
WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 7
229910052782 aluminium Inorganic materials 0.000 description 7
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
239000007788 liquid Substances 0.000 description 6
229910052757 nitrogen Inorganic materials 0.000 description 6
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
125000005842 heteroatom Chemical group 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
238000006862 quantum yield reaction Methods 0.000 description 4
239000000126 substance Substances 0.000 description 4
VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
238000001816 cooling Methods 0.000 description 3
238000000151 deposition Methods 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
238000009434 installation Methods 0.000 description 3
230000005855 radiation Effects 0.000 description 3
229910052715 tantalum Inorganic materials 0.000 description 3
238000007740 vapor deposition Methods 0.000 description 3
235000012431 wafers Nutrition 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
229920004482 WACKER® Polymers 0.000 description 2
239000012298 atmosphere Substances 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
239000013078 crystal Substances 0.000 description 2
239000008367 deionised water Substances 0.000 description 2
229910021641 deionized water Inorganic materials 0.000 description 2
230000008021 deposition Effects 0.000 description 2
238000005286 illumination Methods 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
239000000843 powder Substances 0.000 description 2
230000003595 spectral effect Effects 0.000 description 2
230000008016 vaporization Effects 0.000 description 2
RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
230000002745 absorbent Effects 0.000 description 1
239000002250 absorbent Substances 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
230000003667 anti-reflective effect Effects 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000012300 argon atmosphere Substances 0.000 description 1
239000012141 concentrate Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
239000000498 cooling water Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000003795 desorption Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
229910052740 iodine Inorganic materials 0.000 description 1
239000011630 iodine Substances 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000005226 mechanical processes and functions Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
239000004570 mortar (masonry) Substances 0.000 description 1
239000003921 oil Substances 0.000 description 1
238000005457 optimization Methods 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000005297 pyrex Substances 0.000 description 1
238000002310 reflectometry Methods 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
239000010959 steel Substances 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
238000012360 testing method Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

Photovoltaic Devices (AREA)

NL8004990A 1979-09-10 1980-09-03 Foto-galvanische elementen. NL8004990A (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
IT25569/79A IT1163710B (it)	1979-09-10	1979-09-10	Celle fotovoltaiche
IT2556979		1979-09-10

Publications (1)

Publication Number	Publication Date
NL8004990A true NL8004990A (nl)	1981-03-12

Family

ID=11217123

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8004990A NL8004990A (nl)	1979-09-10	1980-09-03	Foto-galvanische elementen.

Country Status (11)

Country	Link
US (1)	US4366337A (sr)
JP (2)	JPS5681980A (sr)
AU (1)	AU539090B2 (sr)
BE (1)	BE885167A (sr)
CA (1)	CA1168741A (sr)
DE (1)	DE3033203A1 (sr)
DK (1)	DK159349C (sr)
FR (1)	FR2465319A1 (sr)
GB (1)	GB2058452B (sr)
IT (1)	IT1163710B (sr)
NL (1)	NL8004990A (sr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE212009000031U1 (de) *	2008-03-05	2010-11-04	Global Solar Energy, Inc., Tuscon	Vorrichtung zum Aufbringen einer dünnschichtigen Pufferschicht auf einen flexiblen Träger
JP5738601B2 (ja)	2008-03-05	2015-06-24	ハナジー・ハイ−テク・パワー・（エイチケー）・リミテッド	薄膜太陽電池セルのための緩衝層蒸着
US9252318B2 (en)	2008-03-05	2016-02-02	Hanergy Hi-Tech Power (Hk) Limited	Solution containment during buffer layer deposition
WO2009111052A1 (en) *	2008-03-05	2009-09-11	Global Solar Energy, Inc.	Heating for buffer layer deposition
US20100087015A1 (en) *	2008-03-05	2010-04-08	Global Solar Energy, Inc.	Feedback for buffer layer deposition
US20160359070A1 (en)	2015-06-02	2016-12-08	International Business Machines Corporation	Controllable indium doping for high efficiency czts thin-film solar cells
CN115295665A (zh) *	2022-07-08	2022-11-04	中山大学	一种采用无掺杂发射极的太阳电池及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3720125A (en) *	1971-08-02	1973-03-13	Whitney Corp W	Adjustable stripper with stroke control
DE2214055A1 (de) *	1972-03-23	1973-09-27	Agfa Gevaert Ag	Sensibilisierte elektrophotographische schichten

1979
- 1979-09-10 IT IT25569/79A patent/IT1163710B/it active
1980
- 1980-08-13 US US06/177,597 patent/US4366337A/en not_active Expired - Lifetime
- 1980-08-13 DK DK349780A patent/DK159349C/da not_active IP Right Cessation
- 1980-08-15 AU AU61503/80A patent/AU539090B2/en not_active Ceased
- 1980-08-28 GB GB8027776A patent/GB2058452B/en not_active Expired
- 1980-09-03 DE DE19803033203 patent/DE3033203A1/de not_active Withdrawn
- 1980-09-03 NL NL8004990A patent/NL8004990A/nl not_active Application Discontinuation
- 1980-09-08 FR FR8019360A patent/FR2465319A1/fr active Granted
- 1980-09-09 CA CA000359963A patent/CA1168741A/en not_active Expired
- 1980-09-10 BE BE0/202056A patent/BE885167A/fr not_active IP Right Cessation
- 1980-09-10 JP JP12477480A patent/JPS5681980A/ja active Pending
1989
- 1989-02-22 JP JP1989018990U patent/JPH02748U/ja active Pending

Also Published As

Publication number	Publication date
FR2465319A1 (fr)	1981-03-20
DE3033203A1 (de)	1981-03-19
US4366337A (en)	1982-12-28
GB2058452B (en)	1983-10-05
IT7925569A0 (it)	1979-09-10
DK349780A (da)	1981-03-11
BE885167A (fr)	1981-03-10
JPH02748U (sr)	1990-01-05
AU6150380A (en)	1981-03-19
AU539090B2 (en)	1984-09-13
FR2465319B1 (sr)	1985-03-08
GB2058452A (en)	1981-04-08
DK159349C (da)	1991-03-11
CA1168741A (en)	1984-06-05
IT1163710B (it)	1987-04-08
DK159349B (da)	1990-10-01
JPS5681980A (en)	1981-07-04

Legal Events

Date	Code	Title
1982-12-01	BA	A request for search or an international-type search has been filed
1983-01-03	BB	A search report has been drawn up
1985-01-01	A85	Still pending on 85-01-01
1987-08-03	BC	A request for examination has been filed
1991-05-01	BV	The patent application has lapsed

Publication	Publication Date	Title
George et al.	1988	Reactively evaporated films of indium sulphide
Garcia et al.	1997	Chemical deposition of bismuth selenide thin films using N, N-dimethylselenourea
Tufte et al.	1969	Growth and Properties of Hg1− x Cd x Te Epitaxial Layers
Nagatomo et al.	1990	Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility
Hemanth Kumar et al.	2019	Fabrication of visible light photodetector using co-evaporated Indium Sulfide thin films
MXPA98000205A (en)	1998-04-01	Photodetectors using nitrides ii
Kim et al.	2023	Fabrication of High‐Responsivity Sb2Se3‐Based Photodetectors through Selenization Process
US4434025A (en)	1984-02-28	Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light
NL8004990A (nl)	1981-03-12	Foto-galvanische elementen.
Sathaye et al.	1976	Studies on thin films of cadmium sulphide prepared by a chemical deposition method
Sakai et al.	1964	Properties of photoconductive CdS evaporated films
US4121238A (en)	1978-10-17	Metal oxide/indium phosphide devices
GB1604147A (en)	1981-12-02	Epitaxial techniques for electro-optical applications
EP2312644A1 (en)	2011-04-20	Ultraviolet light receiving element and method for measuring amount of ultraviolet light
Somorjai	1964	Effect of light on the evaporation and oxidation of CdS single crystals
Corsi	1974	Pb x Sn1− x Te layers by rf multicathode sputtering
Brost et al.	1995	Observation of the photorefractive effect in vanadium-doped CdMnTe
CN1684275A (zh)	2005-10-19	一种日盲区紫外探测器用的薄膜材料及其制造方法
Shah et al.	1992	HgBrxI2− x photodetectors for use in scintillation spectroscopy
Campe	1984	Growth and electrical properties of AgGaS2 thin films
Bujatti et al.	1965	Photovoltaic effects at rectifying junctions to deposited CdS films
Howson et al.	1970	Related optical and electrical properties of thin films of indium arsenide
RU2459012C2 (ru)	2012-08-20	Способ изготовления тонких пленок на основе моносульфида самария
Pal et al.	1991	The anomalous photovoltaic effect in polycrystalline zinc telluride films
Sebastian et al.	1996	Chemical vapour transport by gas (CVTG): optimization of the system for CdS thin film deposition