NL8200414A - Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. Download PDF

Info

Publication number: NL8200414A
Authority: NL; Netherlands
Prior art keywords: semiconductor device; substrate; semiconductor; layer; radiation beams
Prior art date: 1982-02-04

Application number

NL8200414A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-02-04

Filing date

1982-02-04

Publication date

1983-09-01

1982-02-04 Application filed by Philips Nv filed Critical Philips Nv

1982-02-04 Priority to NL8200414A priority Critical patent/NL8200414A/nl

1983-01-26 Priority to EP83200122A priority patent/EP0086008A3/de

1983-02-01 Priority to AU10872/83A priority patent/AU1087283A/en

1983-02-02 Priority to ES519470A priority patent/ES519470A0/es

1983-02-02 Priority to JP58014701A priority patent/JPS58134492A/ja

1983-09-01 Publication of NL8200414A publication Critical patent/NL8200414A/nl

Links

239000004065 semiconductor Substances 0.000 title claims description 43
238000004519 manufacturing process Methods 0.000 title description 3
239000000758 substrate Substances 0.000 claims description 35
230000005855 radiation Effects 0.000 claims description 31
239000000463 material Substances 0.000 claims description 7
230000005540 biological transmission Effects 0.000 claims description 3
239000004744 fabric Substances 0.000 claims 1
239000010902 straw Substances 0.000 claims 1
238000001816 cooling Methods 0.000 description 10
238000000034 method Methods 0.000 description 7
230000003287 optical effect Effects 0.000 description 7
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
229910001218 Gallium arsenide Inorganic materials 0.000 description 5
238000010276 construction Methods 0.000 description 4
238000009792 diffusion process Methods 0.000 description 4
238000005530 etching Methods 0.000 description 4
239000000203 mixture Substances 0.000 description 4
239000013307 optical fiber Substances 0.000 description 4
239000011701 zinc Substances 0.000 description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
230000008901 benefit Effects 0.000 description 3
239000013078 crystal Substances 0.000 description 3
229910052737 gold Inorganic materials 0.000 description 3
239000010931 gold Substances 0.000 description 3
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
239000011651 chromium Substances 0.000 description 2
230000000694 effects Effects 0.000 description 2
229910052732 germanium Inorganic materials 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
239000007791 liquid phase Substances 0.000 description 2
230000000873 masking effect Effects 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
239000012071 phase Substances 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
229910052725 zinc Inorganic materials 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
229910021555 Chromium Chloride Inorganic materials 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
229910000070 arsenic hydride Inorganic materials 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
239000002775 capsule Substances 0.000 description 1
239000004568 cement Substances 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
238000005352 clarification Methods 0.000 description 1
230000001427 coherent effect Effects 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
125000005842 heteroatom Chemical group 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000005498 polishing Methods 0.000 description 1
238000006748 scratching Methods 0.000 description 1
230000002393 scratching effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
230000000087 stabilizing effect Effects 0.000 description 1
QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
230000007704 transition Effects 0.000 description 1
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Led Devices (AREA)
Optical Head (AREA)

NL8200414A 1982-02-04 1982-02-04 Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. NL8200414A (nl)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
NL8200414A NL8200414A (nl)	1982-02-04	1982-02-04	Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.
EP83200122A EP0086008A3 (de)	1982-02-04	1983-01-26	Halbleitervorrichtung zur Erzeugung von mindestens zwei Strahlen
AU10872/83A AU1087283A (en)	1982-02-04	1983-02-01	Semiconductor device generating two wavelengths
ES519470A ES519470A0 (es)	1982-02-04	1983-02-02	Un dispositivo semiconductor.
JP58014701A JPS58134492A (ja)	1982-02-04	1983-02-02	少くとも２つの光ビ−ムを発生する半導体装置

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8200414		1982-02-04
NL8200414A NL8200414A (nl)	1982-02-04	1982-02-04	Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number	Publication Date
NL8200414A true NL8200414A (nl)	1983-09-01

Family

ID=19839193

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8200414A NL8200414A (nl)	1982-02-04	1982-02-04	Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.

Country Status (5)

Country	Link
EP (1)	EP0086008A3 (de)
JP (1)	JPS58134492A (de)
AU (1)	AU1087283A (de)
ES (1)	ES519470A0 (de)
NL (1)	NL8200414A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4747110A (en) *	1985-02-13	1988-05-24	Matsushita Electric Industrial Co., Ltd.	Semiconductor laser device capable of emitting laser beams of different wavelengths
JPS61287289A (ja) *	1985-06-14	1986-12-17	Sharp Corp	光メモリ用半導体レ−ザ装置
US4843031A (en) *	1987-03-17	1989-06-27	Matsushita Electric Industrial Co., Ltd.	Method of fabricating compound semiconductor laser using selective irradiation
DE3728568A1 (de) *	1987-08-27	1989-03-16	Telefunken Electronic Gmbh	Halbleiterlaseranordnung
US6136623A (en) *	1998-05-06	2000-10-24	Xerox Corporation	Multiple wavelength laser arrays by flip-chip bonding
CN112067123A (zh)	2014-09-23	2020-12-11	赫普塔冈微光有限公司	紧凑、功率有效的堆叠宽带光学发射器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4873090A (de) *	1971-12-27	1973-10-02
NL8101409A (nl) *	1981-03-23	1982-10-18	Philips Nv	Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.

1982
- 1982-02-04 NL NL8200414A patent/NL8200414A/nl not_active Application Discontinuation
1983
- 1983-01-26 EP EP83200122A patent/EP0086008A3/de not_active Withdrawn
- 1983-02-01 AU AU10872/83A patent/AU1087283A/en not_active Abandoned
- 1983-02-02 JP JP58014701A patent/JPS58134492A/ja active Pending
- 1983-02-02 ES ES519470A patent/ES519470A0/es active Granted

Also Published As

Publication number	Publication date
AU1087283A (en)	1983-08-11
JPS58134492A (ja)	1983-08-10
EP0086008A2 (de)	1983-08-17
EP0086008A3 (de)	1985-04-10
ES8401284A1 (es)	1983-11-16
ES519470A0 (es)	1983-11-16

Legal Events

Date	Code	Title
1983-09-01	A1B	A search report has been drawn up
1985-01-01	A85	Still pending on 85-01-01
1985-10-01	BV	The patent application has lapsed

Publication	Publication Date	Title
RU2491683C2 (ru)	2013-08-27	Контакт для полупроводникового светоизлучающего устройства
CA1173549A (en)	1984-08-28	Semiconductor laser having at least two radiation beams, and method of manufacturing same
JP4897133B2 (ja)	2012-03-14	半導体発光素子、その製造方法および配設基板
US7808011B2 (en)	2010-10-05	Semiconductor light emitting devices including in-plane light emitting layers
EP0502670B1 (de)	1995-08-30	Laserdioden-Array
KR101589855B1 (ko)	2016-02-12	발광 다이오드 및 그 제조 방법
EP2033238B1 (de)	2015-10-14	Lichtemittierende halbleitervorrichtung mit poröser schicht
CA1226929A (en)	1987-09-15	Multiple wavelength light emitting devices
EP3121857A2 (de)	2017-01-25	Lichtemittierende vorrichtung
JP2012019234A (ja)	2012-01-26	ＧａＮをベースとする発光ダイオードチップおよび発光ダイオード構造素子の製造法
JPH05257173A (ja)	1993-10-08	半導体光機能素子
TW512415B (en)	2002-12-01	Laser separated die with tapered sidewalls for improved light extraction
EP0204725A1 (de)	1986-12-17	Asymmetrischer chip-entwurf für lichtausstrahlende dioden.
KR101479914B1 (ko)	2015-01-08	발광 다이오드, 발광 다이오드 램프 및 조명 장치
US3614661A (en)	1971-10-19	Semiconductor laser diode arrangement for exciting light-wave conductors
EP0086008A2 (de)	1983-08-17	Halbleitervorrichtung zur Erzeugung von mindestens zwei Strahlen
JP4155847B2 (ja)	2008-09-24	積層型発光ダイオード素子
NL8201409A (nl)	1983-11-01	Halfgeleiderlaser en werkwijze ter vervaardiging ervan.
NL8802936A (nl)	1990-06-18	Electroluminescerende diode met lage capaciteit.
JPH09172198A (ja)	1997-06-30	発光ダイオードおよびその製造方法
KR20050009089A (ko)	2005-01-24	ＡｌＧａＩｎＰ계 발광 다이오드 및 그 제조방법
JPH07107945B2 (ja)	1995-11-15	半導体発光装置
JPH04283948A (ja)	1992-10-08	光半導体素子用サブマウント
KR19990029068A (ko)	1999-04-15	반도체 레이저 칩 및 적외선 에미터 소자
JPH0482278A (ja)	1992-03-16	発光ダイオード