NL8201910A - Beeldopneeminrichting. - Google Patents

Beeldopneeminrichting. Download PDF

Info

Publication number
NL8201910A
NL8201910A NL8201910A NL8201910A NL8201910A NL 8201910 A NL8201910 A NL 8201910A NL 8201910 A NL8201910 A NL 8201910A NL 8201910 A NL8201910 A NL 8201910A NL 8201910 A NL8201910 A NL 8201910A
Authority
NL
Netherlands
Prior art keywords
current
output
transistor
electrode
transistors
Prior art date
Application number
NL8201910A
Other languages
English (en)
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL8201910A publication Critical patent/NL8201910A/nl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/76—Circuitry for compensating brightness variation in the scene by influencing the image signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)
NL8201910A 1981-05-09 1982-05-10 Beeldopneeminrichting. NL8201910A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6978681 1981-05-09
JP56069786A JPS57184376A (en) 1981-05-09 1981-05-09 Signal output circuit of image pickup device

Publications (1)

Publication Number Publication Date
NL8201910A true NL8201910A (nl) 1982-12-01

Family

ID=13412781

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8201910A NL8201910A (nl) 1981-05-09 1982-05-10 Beeldopneeminrichting.

Country Status (8)

Country Link
US (1) US4463383A (de)
JP (1) JPS57184376A (de)
AT (1) AT384924B (de)
CA (1) CA1185005A (de)
DE (1) DE3217046A1 (de)
FR (1) FR2505589A1 (de)
GB (1) GB2100952B (de)
NL (1) NL8201910A (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3221520A1 (de) * 1982-06-08 1984-03-01 Telefunken electronic GmbH, 7100 Heilbronn Anordnung mit mehreren phototransistoren
JPS5966277A (ja) * 1982-10-07 1984-04-14 Toshiba Corp 固体イメ−ジセンサ
US4549215A (en) * 1983-04-07 1985-10-22 Rca Corporation Low noise black level reference for CCD imagers
US4914519A (en) * 1986-09-19 1990-04-03 Canon Kabushiki Kaisha Apparatus for eliminating noise in a solid-state image pickup device
US5771070A (en) * 1985-11-15 1998-06-23 Canon Kabushiki Kaisha Solid state image pickup apparatus removing noise from the photoelectric converted signal
JPH084127B2 (ja) * 1986-09-30 1996-01-17 キヤノン株式会社 光電変換装置
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
EP0232593B1 (de) * 1985-11-15 1994-03-09 Canon Kabushiki Kaisha Photoelektrische Wandlervorrichtung
US4876534A (en) * 1988-02-05 1989-10-24 Synaptics Incorporated Scanning method and apparatus for current signals having large dynamic range
FR2713037B1 (fr) * 1993-11-23 1995-12-29 Thomson Csf Circuit d'injection, en imagerie thermique.
EP0726578A1 (de) * 1995-02-09 1996-08-14 International Business Machines Corporation Leseverstärker mit mehreren Referenzen
US6873362B1 (en) * 1995-03-22 2005-03-29 Sony Corporation Scanning switch transistor for solid-state imaging device
JP3774499B2 (ja) 1996-01-24 2006-05-17 キヤノン株式会社 光電変換装置
US5923794A (en) * 1996-02-06 1999-07-13 Polaroid Corporation Current-mediated active-pixel image sensing device with current reset
US6141048A (en) * 1996-08-19 2000-10-31 Eastman Kodak Company Compact image capture device
GB2318473B (en) * 1996-10-17 2000-11-29 Sony Corp Solid state imaging device,signal processing method and camera
US6137535A (en) * 1996-11-04 2000-10-24 Eastman Kodak Company Compact digital camera with segmented fields of view
JPH11103418A (ja) * 1997-09-29 1999-04-13 Canon Inc 光電変換装置
US6005619A (en) * 1997-10-06 1999-12-21 Photobit Corporation Quantum efficiency improvements in active pixel sensors
JP3226859B2 (ja) * 1997-11-17 2001-11-05 日本電気株式会社 撮像装置
US6697111B1 (en) 1998-04-08 2004-02-24 Ess Technology, Inc. Compact low-noise active pixel sensor with progressive row reset
US6493030B1 (en) 1998-04-08 2002-12-10 Pictos Technologies, Inc. Low-noise active pixel sensor for imaging arrays with global reset
US6535247B1 (en) 1998-05-19 2003-03-18 Pictos Technologies, Inc. Active pixel sensor with capacitorless correlated double sampling
US6532040B1 (en) 1998-09-09 2003-03-11 Pictos Technologies, Inc. Low-noise active-pixel sensor for imaging arrays with high speed row reset
US6587142B1 (en) 1998-09-09 2003-07-01 Pictos Technologies, Inc. Low-noise active-pixel sensor for imaging arrays with high speed row reset
US6677995B1 (en) * 1999-02-04 2004-01-13 Agere Systems Inc. Array readout system
US6809767B1 (en) 1999-03-16 2004-10-26 Kozlowski Lester J Low-noise CMOS active pixel sensor for imaging arrays with high speed global or row reset
JP4724893B2 (ja) * 1999-04-15 2011-07-13 ソニー株式会社 固体撮像素子およびその画素信号処理方法
US6750912B1 (en) 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
US6498331B1 (en) 1999-12-21 2002-12-24 Pictos Technologies, Inc. Method and apparatus for achieving uniform low dark current with CMOS photodiodes
DE10041796A1 (de) * 2000-08-25 2002-03-14 Infineon Technologies Ag Elektronische Verstärkerschaltung mit schaltbarem Eingangstransistor
US6940551B2 (en) 2000-09-25 2005-09-06 Foveon, Inc. Active pixel sensor with noise cancellation
US6504141B1 (en) 2000-09-29 2003-01-07 Rockwell Science Center, Llc Adaptive amplifier circuit with enhanced dynamic range
US6965707B1 (en) 2000-09-29 2005-11-15 Rockwell Science Center, Llc Compact active pixel with low-noise snapshot image formation
US6900839B1 (en) 2000-09-29 2005-05-31 Rockwell Science Center, Llc High gain detector amplifier with enhanced dynamic range for single photon read-out of photodetectors
US6873359B1 (en) 2000-09-29 2005-03-29 Rockwell Science Center, Llc. Self-adjusting, adaptive, minimal noise input amplifier circuit
US6888572B1 (en) 2000-10-26 2005-05-03 Rockwell Science Center, Llc Compact active pixel with low-noise image formation
US6538245B1 (en) 2000-10-26 2003-03-25 Rockwell Science Center, Llc. Amplified CMOS transducer for single photon read-out of photodetectors
US6937025B1 (en) 2003-07-17 2005-08-30 Foveon, Inc. Method and circuit employing current sensing to read a sensor
US8120077B2 (en) * 2004-12-16 2012-02-21 Panasonic Corporation Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise
EP1903267A1 (de) * 2005-07-12 2008-03-26 Inax Corporation Steuerventilvorrichtung für wasserableitung/stopp und strömungsregelung
JP4753373B2 (ja) * 2005-09-16 2011-08-24 株式会社半導体エネルギー研究所 表示装置及び表示装置の駆動方法
US20080204578A1 (en) * 2007-02-23 2008-08-28 Labsphere, Inc. Image sensor dark correction method, apparatus, and system
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US11405575B2 (en) * 2017-12-26 2022-08-02 Sony Semiconductor Solutions Corporation Solid-state imaging element, comparator, and electronic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3696250A (en) * 1970-09-17 1972-10-03 Rca Corp Signal transfer system for panel type image sensor
JPS5610667B2 (de) * 1973-06-20 1981-03-10
NL7416330A (nl) * 1974-12-16 1976-06-18 Philips Nv Inrichting voor het uitlezen van de ladings- toestand van een fototransistor.
JPS55105480A (en) * 1979-02-07 1980-08-13 Hitachi Ltd Solid state pickup device
US4233630A (en) * 1979-09-04 1980-11-11 Zenith Radio Corporation Circuit for modifying the IF response of a television receiver
JPS5651165A (en) * 1979-10-03 1981-05-08 Hitachi Ltd Noise eliminating circuit

Also Published As

Publication number Publication date
GB2100952B (en) 1984-11-21
FR2505589A1 (fr) 1982-11-12
DE3217046A1 (de) 1983-01-20
AT384924B (de) 1988-01-25
GB2100952A (en) 1983-01-06
US4463383A (en) 1984-07-31
CA1185005A (en) 1985-04-02
ATA182382A (de) 1987-06-15
JPS57184376A (en) 1982-11-13

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BV The patent application has lapsed