NL8300631A - Inrichting voor het opwekken van coherente straling. - Google Patents

Inrichting voor het opwekken van coherente straling. Download PDF

Info

Publication number: NL8300631A
Authority: NL; Netherlands
Prior art keywords: semiconductor; layer; junction; cathode; breakdown voltage
Prior art date: 1983-02-21

Application number

NL8300631A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-02-21

Filing date

1983-02-21

Publication date

1984-09-17

1983-02-21 Application filed by Philips Nv filed Critical Philips Nv

1983-02-21 Priority to NL8300631A priority Critical patent/NL8300631A/nl

1984-02-03 Priority to US06/576,974 priority patent/US4631731A/en

1984-02-16 Priority to CA000447568A priority patent/CA1257676A/en

1984-02-20 Priority to AT84200222T priority patent/ATE29345T1/de

1984-02-20 Priority to DE8484200222T priority patent/DE3465843D1/de

1984-02-20 Priority to AU24738/84A priority patent/AU571488B2/en

1984-02-20 Priority to EP84200222A priority patent/EP0119646B1/de

1984-02-21 Priority to JP59029663A priority patent/JPS59161891A/ja

1984-09-17 Publication of NL8300631A publication Critical patent/NL8300631A/nl

Links

230000005855 radiation Effects 0.000 title claims abstract description 15
230000001427 coherent effect Effects 0.000 title claims description 7
239000004065 semiconductor Substances 0.000 claims abstract description 74
239000000463 material Substances 0.000 claims abstract description 21
238000002347 injection Methods 0.000 claims abstract description 8
239000007924 injection Substances 0.000 claims abstract description 8
239000010410 layer Substances 0.000 claims description 65
230000015556 catabolic process Effects 0.000 claims description 15
150000001875 compounds Chemical class 0.000 claims description 13
230000005670 electromagnetic radiation Effects 0.000 claims description 12
239000011247 coating layer Substances 0.000 claims description 11
238000010894 electron beam technology Methods 0.000 claims description 6
230000001133 acceleration Effects 0.000 claims description 5
239000002344 surface layer Substances 0.000 claims description 5
230000002441 reversible effect Effects 0.000 claims description 3
239000011669 selenium Substances 0.000 claims description 3
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
229910052793 cadmium Inorganic materials 0.000 claims description 2
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
229910052760 oxygen Inorganic materials 0.000 claims description 2
239000001301 oxygen Substances 0.000 claims description 2
229910052711 selenium Inorganic materials 0.000 claims description 2
229910052717 sulfur Inorganic materials 0.000 claims description 2
239000011593 sulfur Substances 0.000 claims description 2
229910052714 tellurium Inorganic materials 0.000 claims description 2
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
229910052725 zinc Inorganic materials 0.000 claims 1
239000011701 zinc Substances 0.000 claims 1
230000008901 benefit Effects 0.000 abstract description 8
230000009471 action Effects 0.000 abstract description 2
238000000926 separation method Methods 0.000 abstract 1
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
229910052980 cadmium sulfide Inorganic materials 0.000 description 5
PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
238000000034 method Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
229910001218 Gallium arsenide Inorganic materials 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000005083 Zinc sulfide Substances 0.000 description 2
IPCGGVKCDVFDQU-UHFFFAOYSA-N [Zn].[Se]=S Chemical compound [Zn].[Se]=S IPCGGVKCDVFDQU-UHFFFAOYSA-N 0.000 description 2
229910052785 arsenic Inorganic materials 0.000 description 2
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
238000010276 construction Methods 0.000 description 2
238000009826 distribution Methods 0.000 description 2
238000005530 etching Methods 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
230000009467 reduction Effects 0.000 description 2
230000002829 reductive effect Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
230000007704 transition Effects 0.000 description 2
239000011787 zinc oxide Substances 0.000 description 2
229910052984 zinc sulfide Inorganic materials 0.000 description 2
UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
239000011149 active material Substances 0.000 description 1
230000006978 adaptation Effects 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
229910052788 barium Inorganic materials 0.000 description 1
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229910052797 bismuth Inorganic materials 0.000 description 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
229910052792 caesium Inorganic materials 0.000 description 1
TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
239000000969 carrier Substances 0.000 description 1
230000008859 change Effects 0.000 description 1
238000004891 communication Methods 0.000 description 1
238000001816 cooling Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
238000013461 design Methods 0.000 description 1
239000006185 dispersion Substances 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
238000003384 imaging method Methods 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
238000009434 installation Methods 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
230000009545 invasion Effects 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
229910052744 lithium Inorganic materials 0.000 description 1
238000005259 measurement Methods 0.000 description 1
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
229910052753 mercury Inorganic materials 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000010355 oscillation Effects 0.000 description 1
230000036961 partial effect Effects 0.000 description 1
238000000059 patterning Methods 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000012552 review Methods 0.000 description 1
239000010979 ruby Substances 0.000 description 1
229910001750 ruby Inorganic materials 0.000 description 1
VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 description 1
229960005265 selenium sulfide Drugs 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
229910052716 thallium Inorganic materials 0.000 description 1
BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 description 1
DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/0955—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
- H01S3/0959—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam

Landscapes

Physics & Mathematics (AREA)
Electromagnetism (AREA)
High Energy & Nuclear Physics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Glass Compositions (AREA)
Analysing Materials By The Use Of Radiation (AREA)

NL8300631A 1983-02-21 1983-02-21 Inrichting voor het opwekken van coherente straling. NL8300631A (nl)

Priority Applications (8)

Application Number	Priority Date	Filing Date	Title
NL8300631A NL8300631A (nl)	1983-02-21	1983-02-21	Inrichting voor het opwekken van coherente straling.
US06/576,974 US4631731A (en)	1983-02-21	1984-02-03	Device for producing or amplifying coherent radiation
CA000447568A CA1257676A (en)	1983-02-21	1984-02-16	Device for producing coherent radiation
AT84200222T ATE29345T1 (de)	1983-02-21	1984-02-20	Vorrichtung zur erzeugung von kohaerenter strahlung.
DE8484200222T DE3465843D1 (en)	1983-02-21	1984-02-20	Device for producing coherent radiation
AU24738/84A AU571488B2 (en)	1983-02-21	1984-02-20	Semiconductor laser
EP84200222A EP0119646B1 (de)	1983-02-21	1984-02-20	Vorrichtung zur Erzeugung von kohärenter Strahlung
JP59029663A JPS59161891A (ja)	1983-02-21	1984-02-21	可干渉性放射線発生装置

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8300631A NL8300631A (nl)	1983-02-21	1983-02-21	Inrichting voor het opwekken van coherente straling.
NL8300631		1983-02-21

Publications (1)

Publication Number	Publication Date
NL8300631A true NL8300631A (nl)	1984-09-17

Family

ID=19841445

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8300631A NL8300631A (nl)	1983-02-21	1983-02-21	Inrichting voor het opwekken van coherente straling.

Country Status (8)

Country	Link
US (1)	US4631731A (de)
EP (1)	EP0119646B1 (de)
JP (1)	JPS59161891A (de)
AT (1)	ATE29345T1 (de)
AU (1)	AU571488B2 (de)
CA (1)	CA1257676A (de)
DE (1)	DE3465843D1 (de)
NL (1)	NL8300631A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL8400632A (nl) *	1984-02-29	1985-09-16	Philips Nv	Inrichting voor het opwekken van elektromagnetische straling.
DE3538175C2 (de) *	1984-11-21	1996-06-05	Philips Electronics Nv	Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8701497A (nl) *	1987-06-26	1989-01-16	Philips Nv	Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
US4894832A (en) *	1988-09-15	1990-01-16	North American Philips Corporation	Wide band gap semiconductor light emitting devices
JP2548352B2 (ja) *	1989-01-17	1996-10-30	松下電器産業株式会社	発光素子およびその製造方法
FR2661566B1 (fr) *	1990-04-25	1995-03-31	Commissariat Energie Atomique	Laser compact a semi-conducteur du type a pompage electronique.
FR2690005B1 (fr) *	1992-04-10	1994-05-20	Commissariat A Energie Atomique	Canon a electrons compact comportant une source d'electrons a micropointes et laser a semi-conducteur utilisant ce canon pour le pompage electronique.
JPH06104533A (ja) *	1992-09-22	1994-04-15	Matsushita Electric Ind Co Ltd	青色発光素子およびその製造方法
US5513198A (en) *	1993-07-14	1996-04-30	Corning Incorporated	Packaging of high power semiconductor lasers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3393373A (en) *	1963-07-11	1968-07-16	Stimler Morton	Electron stimulated optical maser
US3655986A (en) *	1964-10-20	1972-04-11	Massachusetts Inst Technology	Laser device
US3575627A (en) *	1967-12-29	1971-04-20	Rca Corp	Cathode-ray tube with screen comprising laser crystals
US3715162A (en) *	1971-04-19	1973-02-06	Minnesota Mining & Mfg	Free exciton indirect transition laser
JPS4862392A (de) *	1971-12-06	1973-08-31
US3821773A (en) *	1972-01-24	1974-06-28	Beta Ind Inc	Solid state emitting device and method of producing the same
JPS5110074A (ja) *	1974-07-10	1976-01-27	Iichiro Matsumoto	Kokuruiseifunho
US3942132A (en) *	1974-09-06	1976-03-02	The United States Of America As Represented By The Secretary Of The Army	Combined electron beam semiconductor modulator and junction laser
NL7901122A (nl) *	1979-02-13	1980-08-15	Philips Nv	Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
NL184589C (nl) *	1979-07-13	1989-09-01	Philips Nv	Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

1983
- 1983-02-21 NL NL8300631A patent/NL8300631A/nl not_active Application Discontinuation
1984
- 1984-02-03 US US06/576,974 patent/US4631731A/en not_active Expired - Fee Related
- 1984-02-16 CA CA000447568A patent/CA1257676A/en not_active Expired
- 1984-02-20 AT AT84200222T patent/ATE29345T1/de not_active IP Right Cessation
- 1984-02-20 EP EP84200222A patent/EP0119646B1/de not_active Expired
- 1984-02-20 AU AU24738/84A patent/AU571488B2/en not_active Ceased
- 1984-02-20 DE DE8484200222T patent/DE3465843D1/de not_active Expired
- 1984-02-21 JP JP59029663A patent/JPS59161891A/ja active Pending

Also Published As

Publication number	Publication date
AU2473884A (en)	1984-08-30
EP0119646B1 (de)	1987-09-02
DE3465843D1 (en)	1987-10-08
JPS59161891A (ja)	1984-09-12
EP0119646A1 (de)	1984-09-26
AU571488B2 (en)	1988-04-21
US4631731A (en)	1986-12-23
CA1257676A (en)	1989-07-18
ATE29345T1 (de)	1987-09-15

Legal Events

Date	Code	Title
1984-09-17	A1B	A search report has been drawn up
1985-01-01	A85	Still pending on 85-01-01
1988-10-03	BV	The patent application has lapsed

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