NL8301215A - Halfgeleiderinrichting voor het opwekken van electromagnetische straling. - Google Patents

Halfgeleiderinrichting voor het opwekken van electromagnetische straling. Download PDF

Info

Publication number: NL8301215A
Authority: NL; Netherlands
Prior art keywords: layers; active; semiconductor; layer; thickness
Prior art date: 1983-04-07

Application number

NL8301215A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-04-07

Filing date

1983-04-07

Publication date

1984-11-01

1983-04-07 Application filed by Philips Nv filed Critical Philips Nv

1983-04-07 Priority to NL8301215A priority Critical patent/NL8301215A/nl

1984-04-04 Priority to EP84200473A priority patent/EP0124924B1/de

1984-04-04 Priority to DE8484200473T priority patent/DE3465849D1/de

1984-04-06 Priority to JP59067779A priority patent/JPS59197187A/ja

1984-11-01 Publication of NL8301215A publication Critical patent/NL8301215A/nl

1985-12-31 Priority to US06/816,972 priority patent/US4644378A/en

Links

239000004065 semiconductor Substances 0.000 title claims description 53
230000005670 electromagnetic radiation Effects 0.000 title description 3
230000004888 barrier function Effects 0.000 claims description 31
230000005855 radiation Effects 0.000 claims description 24
239000000463 material Substances 0.000 claims description 17
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 16
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 16
MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 10
150000001875 compounds Chemical class 0.000 claims description 7
HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 7
IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 claims description 5
229910005540 GaP Inorganic materials 0.000 claims description 5
230000000694 effects Effects 0.000 description 14
239000000758 substrate Substances 0.000 description 7
230000001427 coherent effect Effects 0.000 description 6
238000000034 method Methods 0.000 description 6
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
150000001768 cations Chemical group 0.000 description 3
238000001451 molecular beam epitaxy Methods 0.000 description 3
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000002800 charge carrier Substances 0.000 description 2
230000007423 decrease Effects 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
239000011669 selenium Substances 0.000 description 2
229910052711 selenium Inorganic materials 0.000 description 2
125000003748 selenium group Chemical group *[Se]* 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
230000007704 transition Effects 0.000 description 2
-1 1.57 eV Chemical compound 0.000 description 1
241000024188 Andala Species 0.000 description 1
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
230000003321 amplification Effects 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000005530 etching Methods 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
238000006748 scratching Methods 0.000 description 1
230000002393 scratching effect Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
230000005428 wave function Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
- H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
- H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Nanotechnology (AREA)
Optics & Photonics (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Biophysics (AREA)
Life Sciences & Earth Sciences (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Semiconductor Lasers (AREA)
Led Devices (AREA)

NL8301215A 1983-04-07 1983-04-07 Halfgeleiderinrichting voor het opwekken van electromagnetische straling. NL8301215A (nl)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
NL8301215A NL8301215A (nl)	1983-04-07	1983-04-07	Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
EP84200473A EP0124924B1 (de)	1983-04-07	1984-04-04	Halbleiteranordnung zur Erzeugung elektromagnetischer Strahlung
DE8484200473T DE3465849D1 (en)	1983-04-07	1984-04-04	Semiconductor devise for generating electromagnetic radiation
JP59067779A JPS59197187A (ja)	1983-04-07	1984-04-06	半導体装置
US06/816,972 US4644378A (en)	1983-04-07	1985-12-31	Semiconductor device for generating electromagnetic radiation

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8301215		1983-04-07
NL8301215A NL8301215A (nl)	1983-04-07	1983-04-07	Halfgeleiderinrichting voor het opwekken van electromagnetische straling.

Publications (1)

Publication Number	Publication Date
NL8301215A true NL8301215A (nl)	1984-11-01

Family

ID=19841666

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8301215A NL8301215A (nl)	1983-04-07	1983-04-07	Halfgeleiderinrichting voor het opwekken van electromagnetische straling.

Country Status (5)

Country	Link
US (1)	US4644378A (de)
EP (1)	EP0124924B1 (de)
JP (1)	JPS59197187A (de)
DE (1)	DE3465849D1 (de)
NL (1)	NL8301215A (de)

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US5244749A (en) *	1992-08-03	1993-09-14	At&T Bell Laboratories	Article comprising an epitaxial multilayer mirror
US5362977A (en) *	1992-12-28	1994-11-08	At&T Bell Laboratories	Single mirror light-emitting diodes with enhanced intensity
US6603784B1 (en)	1998-12-21	2003-08-05	Honeywell International Inc.	Mechanical stabilization of lattice mismatched quantum wells
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1983
- 1983-04-07 NL NL8301215A patent/NL8301215A/nl not_active Application Discontinuation
1984
- 1984-04-04 EP EP84200473A patent/EP0124924B1/de not_active Expired
- 1984-04-04 DE DE8484200473T patent/DE3465849D1/de not_active Expired
- 1984-04-06 JP JP59067779A patent/JPS59197187A/ja active Granted
1985
- 1985-12-31 US US06/816,972 patent/US4644378A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH048956B2 (de)	1992-02-18
JPS59197187A (ja)	1984-11-08
US4644378A (en)	1987-02-17
DE3465849D1 (en)	1987-10-08
EP0124924A1 (de)	1984-11-14
EP0124924B1 (de)	1987-09-02

Legal Events

Date	Code	Title
1984-11-01	A1B	A search report has been drawn up
1985-01-01	A85	Still pending on 85-01-01
1985-02-01	BT	A notification was added to the application dossier and made available to the public
1986-12-01	BV	The patent application has lapsed

Publication	Publication Date	Title
NL8301215A (nl)	1984-11-01	Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
KR100254302B1 (ko)	2000-05-01	발광다이오드
EP0359329B1 (de)	1994-03-16	Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand
US5034794A (en)	1991-07-23	Infrared imaging device
US6903379B2 (en)	2005-06-07	GaN based LED lighting extraction efficiency using digital diffractive phase grating
US5010374A (en)	1991-04-23	Quantum well laser utilizing an inversion layer
EP0692827B1 (de)	1999-06-09	Oberflächenemittierende lumineszente Halbleitervorrichtung
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US20040070004A1 (en)	2004-04-15	Led packages having improved light extraction
US20060121702A1 (en)	2006-06-08	III-nitride light emitting devices fabricated by substrate removal
CN1259237A (zh)	2000-07-05	光电子半导体元件
US5008891A (en)	1991-04-16	Semiconductor light-emitting devices
BE1007251A3 (nl)	1995-05-02	Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.
US4817103A (en)	1989-03-28	Semiconductor light emitting device with stacked active regions
GB2178595A (en)	1987-02-11	Semiconductor laser devices
US5222090A (en)	1993-06-22	700-850 nanometer semiconductor diode laser
US4365260A (en)	1982-12-21	Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material
JP2710171B2 (ja)	1998-02-10	面入出力光電融合素子
US5812574A (en)	1998-09-22	Quantum optical semiconductor device producing output optical emission with sharply defined spectrum
EP0194335B1 (de)	1991-01-02	Halbleiterlaser-Vorrichtungen
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KR100545113B1 (ko)	2006-04-14	가시파장의수직공동표면방출레이저
US5057881A (en)	1991-10-15	Light emitting compositional semiconductor device
US4270094A (en)	1981-05-26	Semiconductor light emitting device