NL8301331A - Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan. Download PDF

Info

Publication number: NL8301331A
Authority: NL; Netherlands
Prior art keywords: layer; conductivity type; semiconductor; passive; substrate
Prior art date: 1983-04-15

Application number

NL8301331A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-04-15

Filing date

1983-04-15

Publication date

1984-11-01

1983-04-15 Application filed by Philips Nv filed Critical Philips Nv

1983-04-15 Priority to NL8301331A priority Critical patent/NL8301331A/nl

1984-03-30 Priority to US06/595,091 priority patent/US4653057A/en

1984-04-11 Priority to AT84200506T priority patent/ATE25900T1/de

1984-04-11 Priority to CA000451790A priority patent/CA1243104A/fr

1984-04-11 Priority to EP84200506A priority patent/EP0122674B1/fr

1984-04-11 Priority to DE8484200506T priority patent/DE3462644D1/de

1984-04-13 Priority to AU26811/84A priority patent/AU565081B2/en

1984-04-14 Priority to JP59075685A priority patent/JPS59200485A/ja

1984-11-01 Publication of NL8301331A publication Critical patent/NL8301331A/nl

1986-12-31 Priority to US06/948,387 priority patent/US4731345A/en

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 85
230000005670 electromagnetic radiation Effects 0.000 title claims abstract description 6
238000004519 manufacturing process Methods 0.000 title claims description 9
239000000758 substrate Substances 0.000 claims abstract description 57
230000000903 blocking effect Effects 0.000 claims abstract description 45
238000000034 method Methods 0.000 claims description 24
239000000463 material Substances 0.000 claims description 17
239000002019 doping agent Substances 0.000 claims description 9
230000005855 radiation Effects 0.000 claims description 9
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
238000005530 etching Methods 0.000 claims description 6
239000011777 magnesium Substances 0.000 claims description 5
239000011701 zinc Substances 0.000 claims description 5
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
229910052790 beryllium Inorganic materials 0.000 claims description 4
ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
229910052749 magnesium Inorganic materials 0.000 claims description 4
229910052725 zinc Inorganic materials 0.000 claims description 4
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
229910052711 selenium Inorganic materials 0.000 claims description 3
239000011669 selenium Substances 0.000 claims description 3
229910052714 tellurium Inorganic materials 0.000 claims description 3
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
238000009792 diffusion process Methods 0.000 abstract description 5
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
229910001218 Gallium arsenide Inorganic materials 0.000 description 5
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
238000001816 cooling Methods 0.000 description 2
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
239000004568 cement Substances 0.000 description 1
230000001427 coherent effect Effects 0.000 description 1
238000010924 continuous production Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000009826 distribution Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
239000007791 liquid phase Substances 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
230000002265 prevention Effects 0.000 description 1
230000037452 priming Effects 0.000 description 1
238000006748 scratching Methods 0.000 description 1
230000002393 scratching effect Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Light Receiving Elements (AREA)
Recrystallisation Techniques (AREA)
Led Devices (AREA)
Bipolar Transistors (AREA)
Hall/Mr Elements (AREA)

NL8301331A 1983-04-15 1983-04-15 Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan. NL8301331A (nl)

Priority Applications (9)

Application Number	Priority Date	Filing Date	Title
NL8301331A NL8301331A (nl)	1983-04-15	1983-04-15	Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
US06/595,091 US4653057A (en)	1983-04-15	1984-03-30	Semiconductor device for processing electro-magnetic radiation
AT84200506T ATE25900T1 (de)	1983-04-15	1984-04-11	Halbleiteranordnung zur erzeugung oder verstaerkung elektromagnetischer strahlung und verfahren zu deren herstellung.
CA000451790A CA1243104A (fr)	1983-04-15	1984-04-11	Laser a semiconducteur ou amplificateur de lumiere
EP84200506A EP0122674B1 (fr)	1983-04-15	1984-04-11	Dispositif semi-conducteur pour la production ou l'amplification d'un rayonnement électromagnétique et son procédé de fabrication
DE8484200506T DE3462644D1 (en)	1983-04-15	1984-04-11	Semiconductor device for producing or amplifying electro-magnetic radiation and method of manufacturing same
AU26811/84A AU565081B2 (en)	1983-04-15	1984-04-13	Semiconductor device producing or amplifying radiation
JP59075685A JPS59200485A (ja)	1983-04-15	1984-04-14	半導体装置及び製造方法
US06/948,387 US4731345A (en)	1983-04-15	1986-12-31	Method of making a semiconductor laser by continuous liquid phase epitaxy with out-diffusion from one or more adjacent layers

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8301331A NL8301331A (nl)	1983-04-15	1983-04-15	Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
NL8301331		1983-04-15

Publications (1)

Publication Number	Publication Date
NL8301331A true NL8301331A (nl)	1984-11-01

Family

ID=19841708

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8301331A NL8301331A (nl)	1983-04-15	1983-04-15	Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.

Country Status (8)

Country	Link
US (2)	US4653057A (fr)
EP (1)	EP0122674B1 (fr)
JP (1)	JPS59200485A (fr)
AT (1)	ATE25900T1 (fr)
AU (1)	AU565081B2 (fr)
CA (1)	CA1243104A (fr)
DE (1)	DE3462644D1 (fr)
NL (1)	NL8301331A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL8301331A (nl) *	1983-04-15	1984-11-01	Philips Nv	Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
DE3435148A1 (de) *	1984-09-25	1986-04-03	Siemens AG, 1000 Berlin und 8000 München	Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
US4932033A (en) *	1986-09-26	1990-06-05	Canon Kabushiki Kaisha	Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
US5311533A (en) *	1992-10-23	1994-05-10	Polaroid Corporation	Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion
CN112636175A (zh) *	2020-12-22	2021-04-09	度亘激光技术（苏州）有限公司	一种半导体器件的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3920491A (en) *	1973-11-08	1975-11-18	Nippon Electric Co	Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region
US4149175A (en) *	1975-06-20	1979-04-10	Matsushita Electric Industrial Co., Ltd.	Solidstate light-emitting device
US4326176A (en) *	1976-04-16	1982-04-20	Hitachi, Ltd.	Semiconductor laser device
US4194933A (en) *	1977-05-06	1980-03-25	Bell Telephone Laboratories, Incorporated	Method for fabricating junction lasers having lateral current confinement
US4185256A (en) *	1978-01-13	1980-01-22	Xerox Corporation	Mode control of heterojunction injection lasers and method of fabrication
DE2822146C2 (de) *	1978-05-20	1982-11-25	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
JPS54152878A (en) *	1978-05-23	1979-12-01	Sharp Corp	Structure of semiconductor laser element and its manufacture
DE2942540A1 (de) *	1978-10-25	1980-04-30	Int Standard Electric Corp	Streifenlaser
US4317085A (en) *	1979-09-12	1982-02-23	Xerox Corporation	Channeled mesa laser
US4366568A (en) *	1979-12-20	1982-12-28	Matsushita Electric Industrial Co. Ltd.	Semiconductor laser
JPS5710285A (en) *	1980-06-20	1982-01-19	Hitachi Ltd	Semiconductor laser
JPS57118687A (en) *	1981-01-16	1982-07-23	Sumitomo Electric Ind Ltd	Manufacture of semiconductor laser
DE3105786A1 (de) *	1981-02-17	1982-09-02	Siemens AG, 1000 Berlin und 8000 München	Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
NL8301331A (nl) *	1983-04-15	1984-11-01	Philips Nv	Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
JPS6050983A (ja) *	1983-08-30	1985-03-22	Sharp Corp	半導体レ−ザ素子の製造方法
NL8403017A (nl) *	1984-10-04	1986-05-01	Philips Nv	Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een met mg gedoteerde epitaxiale laag wordt afgezet.

1983
- 1983-04-15 NL NL8301331A patent/NL8301331A/nl not_active Application Discontinuation
1984
- 1984-03-30 US US06/595,091 patent/US4653057A/en not_active Expired - Fee Related
- 1984-04-11 EP EP84200506A patent/EP0122674B1/fr not_active Expired
- 1984-04-11 DE DE8484200506T patent/DE3462644D1/de not_active Expired
- 1984-04-11 CA CA000451790A patent/CA1243104A/fr not_active Expired
- 1984-04-11 AT AT84200506T patent/ATE25900T1/de not_active IP Right Cessation
- 1984-04-13 AU AU26811/84A patent/AU565081B2/en not_active Ceased
- 1984-04-14 JP JP59075685A patent/JPS59200485A/ja active Pending
1986
- 1986-12-31 US US06/948,387 patent/US4731345A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
AU2681184A (en)	1984-10-18
EP0122674A1 (fr)	1984-10-24
DE3462644D1 (en)	1987-04-16
AU565081B2 (en)	1987-09-03
CA1243104A (fr)	1988-10-11
JPS59200485A (ja)	1984-11-13
EP0122674B1 (fr)	1987-03-11
ATE25900T1 (de)	1987-03-15
US4731345A (en)	1988-03-15
US4653057A (en)	1987-03-24

Legal Events

Date	Code	Title
1984-11-01	A1B	A search report has been drawn up
1985-01-01	A85	Still pending on 85-01-01
1986-12-01	BV	The patent application has lapsed

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US6317444B1 (en)	2001-11-13	Optical device including carbon-doped contact layers
EP0132081B1 (fr)	1987-09-09	Laser à semi-conducteur
EP0051669B1 (fr)	1987-06-24	Fabrication de semi-conducteurs utilisant les rayons laser
JPS63318195A (ja)	1988-12-27	横方向埋め込み型面発光レ−ザ
NL8202197A (nl)	1982-12-16	Licht emitterende inrichting.
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CA1096962A (fr)	1981-03-03	Laser injection a diodes en heterostructure ayant une region active retrecie
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NL8301331A (nl)	1984-11-01	Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
US5629232A (en)	1997-05-13	Method of fabricating semiconductor light emitting devices
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US4447822A (en)	1984-05-08	Light emitting diode