ATE25900T1 - Halbleiteranordnung zur erzeugung oder verstaerkung elektromagnetischer strahlung und verfahren zu deren herstellung. - Google Patents

Halbleiteranordnung zur erzeugung oder verstaerkung elektromagnetischer strahlung und verfahren zu deren herstellung.

Info

Publication number
ATE25900T1
ATE25900T1 AT84200506T AT84200506T ATE25900T1 AT E25900 T1 ATE25900 T1 AT E25900T1 AT 84200506 T AT84200506 T AT 84200506T AT 84200506 T AT84200506 T AT 84200506T AT E25900 T1 ATE25900 T1 AT E25900T1
Authority
AT
Austria
Prior art keywords
electromagnetic radiation
substrate
layer
amplification
generation
Prior art date
Application number
AT84200506T
Other languages
English (en)
Inventor
Oirschot Theodorus Gerardu Van
Holstlaan
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of ATE25900T1 publication Critical patent/ATE25900T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Bipolar Transistors (AREA)
  • Hall/Mr Elements (AREA)
AT84200506T 1983-04-15 1984-04-11 Halbleiteranordnung zur erzeugung oder verstaerkung elektromagnetischer strahlung und verfahren zu deren herstellung. ATE25900T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8301331A NL8301331A (nl) 1983-04-15 1983-04-15 Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
EP84200506A EP0122674B1 (de) 1983-04-15 1984-04-11 Halbleiteranordnung zur Erzeugung oder Verstärkung elektromagnetischer Strahlung und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
ATE25900T1 true ATE25900T1 (de) 1987-03-15

Family

ID=19841708

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84200506T ATE25900T1 (de) 1983-04-15 1984-04-11 Halbleiteranordnung zur erzeugung oder verstaerkung elektromagnetischer strahlung und verfahren zu deren herstellung.

Country Status (8)

Country Link
US (2) US4653057A (de)
EP (1) EP0122674B1 (de)
JP (1) JPS59200485A (de)
AT (1) ATE25900T1 (de)
AU (1) AU565081B2 (de)
CA (1) CA1243104A (de)
DE (1) DE3462644D1 (de)
NL (1) NL8301331A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8301331A (nl) * 1983-04-15 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
US4932033A (en) * 1986-09-26 1990-06-05 Canon Kabushiki Kaisha Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
US5311533A (en) * 1992-10-23 1994-05-10 Polaroid Corporation Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion
CN112636175A (zh) * 2020-12-22 2021-04-09 度亘激光技术（苏州）有限公司 一种半导体器件的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920491A (en) * 1973-11-08 1975-11-18 Nippon Electric Co Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region
US4149175A (en) * 1975-06-20 1979-04-10 Matsushita Electric Industrial Co., Ltd. Solidstate light-emitting device
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
US4194933A (en) * 1977-05-06 1980-03-25 Bell Telephone Laboratories, Incorporated Method for fabricating junction lasers having lateral current confinement
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
DE2822146C2 (de) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
DE2942540A1 (de) * 1978-10-25 1980-04-30 Int Standard Electric Corp Streifenlaser
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4366568A (en) * 1979-12-20 1982-12-28 Matsushita Electric Industrial Co. Ltd. Semiconductor laser
JPS5710285A (en) * 1980-06-20 1982-01-19 Hitachi Ltd Semiconductor laser
JPS57118687A (en) * 1981-01-16 1982-07-23 Sumitomo Electric Ind Ltd Manufacture of semiconductor laser
DE3105786A1 (de) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
NL8301331A (nl) * 1983-04-15 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
JPS6050983A (ja) * 1983-08-30 1985-03-22 Sharp Corp 半導体レ−ザ素子の製造方法
NL8403017A (nl) * 1984-10-04 1986-05-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een met mg gedoteerde epitaxiale laag wordt afgezet.

Also Published As

Publication number Publication date
NL8301331A (nl) 1984-11-01
AU2681184A (en) 1984-10-18
EP0122674A1 (de) 1984-10-24
DE3462644D1 (en) 1987-04-16
AU565081B2 (en) 1987-09-03
CA1243104A (en) 1988-10-11
JPS59200485A (ja) 1984-11-13
EP0122674B1 (de) 1987-03-11
US4731345A (en) 1988-03-15
US4653057A (en) 1987-03-24

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee