NL8901376A - Geintegreerde geheugenschakeling met een leesversterker. - Google Patents
Geintegreerde geheugenschakeling met een leesversterker. Download PDFInfo
- Publication number
- NL8901376A NL8901376A NL8901376A NL8901376A NL8901376A NL 8901376 A NL8901376 A NL 8901376A NL 8901376 A NL8901376 A NL 8901376A NL 8901376 A NL8901376 A NL 8901376A NL 8901376 A NL8901376 A NL 8901376A
- Authority
- NL
- Netherlands
- Prior art keywords
- transistor
- current
- control transistor
- branch
- memory circuit
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8901376A NL8901376A (nl) | 1989-05-31 | 1989-05-31 | Geintegreerde geheugenschakeling met een leesversterker. |
| DE69021273T DE69021273T2 (de) | 1989-05-31 | 1990-05-25 | Integrierte Speicherschaltung mit einem Leseverstärker. |
| EP90201314A EP0400728B1 (fr) | 1989-05-31 | 1990-05-25 | Circuit intégré de mémorisation muni d'un amplificateur de lecture |
| ES90201314T ES2077630T3 (es) | 1989-05-31 | 1990-05-25 | Memoria integrada que contiene un amplificador de la grabacion. |
| CN90103239A CN1019614B (zh) | 1989-05-31 | 1990-05-28 | 包含读出放大器的集成存储器 |
| IE191090A IE71667B1 (en) | 1989-05-31 | 1990-05-28 | Integrated memory comprising a sense amplifier |
| CA002017607A CA2017607C (fr) | 1989-05-31 | 1990-05-28 | Memoire integre comportant un amplificateur de detection |
| FI902648A FI902648A7 (fi) | 1989-05-31 | 1990-05-28 | Integroitu muisti, jossa on ilmaisinvahvistin |
| KR1019900007832A KR0155374B1 (ko) | 1989-05-31 | 1990-05-30 | 집적 전계 효과 트랜지스터 메모리 |
| JP2138618A JP2760634B2 (ja) | 1989-05-31 | 1990-05-30 | 集積メモリ |
| US07/707,556 US5253137A (en) | 1989-05-31 | 1991-05-30 | Integrated circuit having a sense amplifier |
| HK61896A HK61896A (en) | 1989-05-31 | 1996-04-11 | Integrated memory comprising a sense amplifier |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8901376A NL8901376A (nl) | 1989-05-31 | 1989-05-31 | Geintegreerde geheugenschakeling met een leesversterker. |
| NL8901376 | 1989-05-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8901376A true NL8901376A (nl) | 1990-12-17 |
Family
ID=19854753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8901376A NL8901376A (nl) | 1989-05-31 | 1989-05-31 | Geintegreerde geheugenschakeling met een leesversterker. |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP0400728B1 (fr) |
| JP (1) | JP2760634B2 (fr) |
| KR (1) | KR0155374B1 (fr) |
| CN (1) | CN1019614B (fr) |
| CA (1) | CA2017607C (fr) |
| DE (1) | DE69021273T2 (fr) |
| ES (1) | ES2077630T3 (fr) |
| FI (1) | FI902648A7 (fr) |
| HK (1) | HK61896A (fr) |
| IE (1) | IE71667B1 (fr) |
| NL (1) | NL8901376A (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2531226Y2 (ja) * | 1992-11-26 | 1997-04-02 | 喜和 石渡 | 紙幣の収納機構 |
| DE69526336D1 (de) * | 1995-04-28 | 2002-05-16 | St Microelectronics Srl | Leseschaltung für Speicherzellen mit niedriger Versorgungsspannung |
| JPH10133908A (ja) * | 1996-10-29 | 1998-05-22 | Mitsubishi Electric Corp | マイクロプロセッサ |
| US6754119B2 (en) * | 2001-07-26 | 2004-06-22 | Samsung Electronics Co., Ltd. | Sense amplifier for memory device |
| KR100408420B1 (ko) * | 2002-01-09 | 2003-12-03 | 삼성전자주식회사 | 감지증폭기의 센싱속도를 향상시킬 수 있는 반도체메모리장치의 감지증폭기 구동회로 |
| CN1326148C (zh) * | 2002-08-14 | 2007-07-11 | 力旺电子股份有限公司 | 利用栅极互耦驱动的负载晶体管读取数据的快速存储器 |
| JP4351178B2 (ja) * | 2005-02-25 | 2009-10-28 | 寛治 大塚 | 半導体記憶装置 |
| JP2007133987A (ja) * | 2005-11-11 | 2007-05-31 | Toshiba Corp | 半導体記憶装置および半導体記憶装置の駆動方法 |
| KR100897252B1 (ko) | 2006-06-30 | 2009-05-14 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
| CN101399018B (zh) * | 2007-09-26 | 2011-09-14 | 中华映管股份有限公司 | 信号控制电路及方法、液晶显示器及其时序控制器 |
| GB2510828B (en) * | 2013-02-13 | 2015-06-03 | Surecore Ltd | Single wordline low-power SRAM cells |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4039861A (en) * | 1976-02-09 | 1977-08-02 | International Business Machines Corporation | Cross-coupled charge transfer sense amplifier circuits |
-
1989
- 1989-05-31 NL NL8901376A patent/NL8901376A/nl not_active Application Discontinuation
-
1990
- 1990-05-25 ES ES90201314T patent/ES2077630T3/es not_active Expired - Lifetime
- 1990-05-25 DE DE69021273T patent/DE69021273T2/de not_active Expired - Lifetime
- 1990-05-25 EP EP90201314A patent/EP0400728B1/fr not_active Expired - Lifetime
- 1990-05-28 FI FI902648A patent/FI902648A7/fi not_active Application Discontinuation
- 1990-05-28 CN CN90103239A patent/CN1019614B/zh not_active Expired
- 1990-05-28 CA CA002017607A patent/CA2017607C/fr not_active Expired - Fee Related
- 1990-05-28 IE IE191090A patent/IE71667B1/en not_active IP Right Cessation
- 1990-05-30 JP JP2138618A patent/JP2760634B2/ja not_active Expired - Lifetime
- 1990-05-30 KR KR1019900007832A patent/KR0155374B1/ko not_active Expired - Fee Related
-
1996
- 1996-04-11 HK HK61896A patent/HK61896A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2017607C (fr) | 2001-07-24 |
| ES2077630T3 (es) | 1995-12-01 |
| IE71667B1 (en) | 1997-02-26 |
| JPH0319198A (ja) | 1991-01-28 |
| EP0400728B1 (fr) | 1995-08-02 |
| KR900019043A (ko) | 1990-12-22 |
| CN1048282A (zh) | 1991-01-02 |
| JP2760634B2 (ja) | 1998-06-04 |
| CN1019614B (zh) | 1992-12-23 |
| FI902648A7 (fi) | 1990-12-01 |
| EP0400728A1 (fr) | 1990-12-05 |
| KR0155374B1 (ko) | 1998-12-01 |
| FI902648A0 (fi) | 1990-05-28 |
| CA2017607A1 (fr) | 1990-11-30 |
| DE69021273D1 (de) | 1995-09-07 |
| IE901910L (en) | 1990-11-30 |
| DE69021273T2 (de) | 1996-04-04 |
| HK61896A (en) | 1996-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |