NL9301480A - Inrichting voor het opwekken van een plasma door middel van kathodeverstuiving en microgolfbestraling. - Google Patents

Inrichting voor het opwekken van een plasma door middel van kathodeverstuiving en microgolfbestraling. Download PDF

Info

Publication number: NL9301480A
Authority: NL; Netherlands
Prior art keywords: plasma; microwave; target; plasma chamber; shielding plates
Prior art date: 1992-09-10

Application number

NL9301480A

Other languages

English (en)

Dutch (nl)

Original Assignee

Leybold Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-09-10

Filing date

1993-08-26

Publication date

1994-04-05

1993-08-26 Application filed by Leybold Ag filed Critical Leybold Ag

1994-04-05 Publication of NL9301480A publication Critical patent/NL9301480A/nl

Links

238000004544 sputter deposition Methods 0.000 title claims description 17
239000004020 conductor Substances 0.000 claims description 6
239000004809 Teflon Substances 0.000 claims description 5
229920006362 Teflon® Polymers 0.000 claims description 5
238000007789 sealing Methods 0.000 claims description 4
230000001681 protective effect Effects 0.000 claims description 3
239000000758 substrate Substances 0.000 description 12
239000007789 gas Substances 0.000 description 4
238000000034 method Methods 0.000 description 4
239000002245 particle Substances 0.000 description 4
239000012212 insulator Substances 0.000 description 3
230000003993 interaction Effects 0.000 description 3
239000000463 material Substances 0.000 description 3
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
229910052756 noble gas Inorganic materials 0.000 description 1
150000002835 noble gases Chemical class 0.000 description 1
239000000615 nonconductor Substances 0.000 description 1
238000000678 plasma activation Methods 0.000 description 1
238000007747 plating Methods 0.000 description 1
239000010970 precious metal Substances 0.000 description 1
230000005855 radiation Effects 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
230000000638 stimulation Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Power Engineering (AREA)
Physical Vapour Deposition (AREA)
Plasma Technology (AREA)
Chemical Vapour Deposition (AREA)

NL9301480A 1992-09-10 1993-08-26 Inrichting voor het opwekken van een plasma door middel van kathodeverstuiving en microgolfbestraling. NL9301480A (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE4230290A DE4230290A1 (de)	1992-09-10	1992-09-10	Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung
DE4230290		1992-09-10

Publications (1)

Publication Number	Publication Date
NL9301480A true NL9301480A (nl)	1994-04-05

Family

ID=6467677

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL9301480A NL9301480A (nl)	1992-09-10	1993-08-26	Inrichting voor het opwekken van een plasma door middel van kathodeverstuiving en microgolfbestraling.

Country Status (5)

Country	Link
US (1)	US5397448A (ja)
JP (1)	JPH06220632A (ja)
KR (1)	KR940007214A (ja)
DE (1)	DE4230290A1 (ja)
NL (1)	NL9301480A (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4336830A1 (de) *	1993-10-28	1995-05-04	Leybold Ag	Plasma-Zerstäubungsanlage mit Mikrowellenunterstützung
JP2592217B2 (ja) *	1993-11-11	1997-03-19	株式会社フロンテック	高周波マグネトロンプラズマ装置
JP3100837B2 (ja) *	1993-12-24	2000-10-23	松下電器産業株式会社	スパッタリング装置
US5616224A (en) *	1995-05-09	1997-04-01	Deposition Sciences, Inc.	Apparatus for reducing the intensity and frequency of arcs which occur during a sputtering process
US6238527B1 (en) *	1997-10-08	2001-05-29	Canon Kabushiki Kaisha	Thin film forming apparatus and method of forming thin film of compound by using the same
WO2002084702A2 (en) *	2001-01-16	2002-10-24	Lampkin Curtis M	Sputtering deposition apparatus and method for depositing surface films
GB0505517D0 (en) *	2005-03-17	2005-04-27	Dupont Teijin Films Us Ltd	Coated polymeric substrates
US20060248636A1 (en) *	2005-05-06	2006-11-09	Brill Hygienic Products, Inc.	Automated toilet seat system with quick disconnect cable
GB201316366D0 (en) *	2013-09-13	2013-10-30	Teer Coatings Ltd	Improvements to coating apparatus
KR101674615B1 (ko) *	2015-05-14	2016-11-09	주식회사 아바코	증착장치
FR3079775B1 (fr) *	2018-04-06	2021-11-26	Addup	Dispositif de chauffage a confinement magnetique pour appareil de fabrication additive selective
US12159768B2 (en) *	2019-03-25	2024-12-03	Recarbon, Inc.	Controlling exhaust gas pressure of a plasma reactor for plasma stability
DE102020201829A1 (de) *	2020-02-13	2021-08-19	Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein	Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung mit zusätzlichen Plasmaquellen
KR102328322B1 (ko) *	2020-04-03	2021-11-19	인제대학교 산학협력단	대기압 중주파 플라즈마 처리장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0173164A1 (en) *	1984-08-31	1986-03-05	Hitachi, Ltd.	Microwave assisting sputtering
US4610770A (en) *	1983-12-26	1986-09-09	Hitachi, Ltd.	Method and apparatus for sputtering
JPS62151561A (ja) *	1985-12-25	1987-07-06	Hitachi Ltd	スパツタリング装置
JPH03253561A (ja) *	1990-03-02	1991-11-12	Nippon Telegr & Teleph Corp <Ntt>	スパッタ型粒子供給源およびそれを用いた加工装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3500328A1 (de) *	1985-01-07	1986-07-10	Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa	Zerstaeubungsaetzvorrichtung
DE3920834A1 (de) *	1989-06-24	1991-02-21	Leybold Ag	Mikrowellen-kathodenzerstaeubungseinrichtung
JPH0436465A (ja) *	1990-06-01	1992-02-06	Matsushita Electric Ind Co Ltd	マイクロ波プラズマ発生装置

1992
- 1992-09-10 DE DE4230290A patent/DE4230290A1/de not_active Withdrawn
1993
- 1993-08-17 US US08/108,081 patent/US5397448A/en not_active Expired - Fee Related
- 1993-08-26 NL NL9301480A patent/NL9301480A/nl not_active Application Discontinuation
- 1993-08-30 JP JP5237344A patent/JPH06220632A/ja active Pending
- 1993-08-31 KR KR1019930017227A patent/KR940007214A/ko not_active Ceased

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4610770A (en) *	1983-12-26	1986-09-09	Hitachi, Ltd.	Method and apparatus for sputtering
EP0173164A1 (en) *	1984-08-31	1986-03-05	Hitachi, Ltd.	Microwave assisting sputtering
JPS62151561A (ja) *	1985-12-25	1987-07-06	Hitachi Ltd	スパツタリング装置
JPH03253561A (ja) *	1990-03-02	1991-11-12	Nippon Telegr & Teleph Corp <Ntt>	スパッタ型粒子供給源およびそれを用いた加工装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 381 (C - 464) 12 December 1987 (1987-12-12) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 049 (C - 0908) 7 February 1992 (1992-02-07) *

Also Published As

Publication number	Publication date
JPH06220632A (ja)	1994-08-09
US5397448A (en)	1995-03-14
DE4230290A1 (de)	1994-03-17
KR940007214A (ko)	1994-04-26

Legal Events

Date	Code	Title
1995-06-01	BA	A request for search or an international-type search has been filed
1997-05-01	BB	A search report has been drawn up
1997-07-01	BC	A request for examination has been filed
1999-05-03	BV	The patent application has lapsed

Publication	Publication Date	Title
KR100659828B1 (ko)	2006-12-19	이온화 물리적 증착 방법 및 장치
KR100228534B1 (ko)	1999-11-01	음극스퍼터링을 이용한 플라즈마 발생장치
KR890004880B1 (ko)	1989-11-30	스퍼터링 방법 및 장치
US4166018A (en)	1979-08-28	Sputtering process and apparatus
US3956093A (en)	1976-05-11	Planar magnetron sputtering method and apparatus
JP3775689B2 (ja)	2006-05-17	材料をイオン化スパッタリングする方法と装置
US5122252A (en)	1992-06-16	Arrangement for the coating of substrates
EP0115119B1 (en)	1991-12-18	Shaped field magnetron electrode
EP1038045B1 (en)	2013-11-13	A method for magnetically enhanced sputtering
US3594295A (en)	1971-07-20	Rf sputtering of insulator materials
NL9301480A (nl)	1994-04-05	Inrichting voor het opwekken van een plasma door middel van kathodeverstuiving en microgolfbestraling.
KR19980080200A (ko)	1998-11-25	전자빔과 자기장을 이용한 이온화된 금속 플라즈마를 발생시키기 위한 방법
US4404077A (en)	1983-09-13	Integrated sputtering apparatus and method
US4434042A (en)	1984-02-28	Planar magnetron sputtering apparatus
US3669860A (en)	1972-06-13	Method and apparatus for applying a film to a substrate surface by diode sputtering
US4716340A (en)	1987-12-29	Pre-ionization aided sputter gun
US6432285B1 (en)	2002-08-13	Planar magnetron sputtering apparatus
US5531877A (en)	1996-07-02	Microwave-enhanced sputtering configuration
US5167789A (en)	1992-12-01	Apparatus for coating a substrate
JPS593546B2 (ja)	1984-01-24	スパツタ装置
KR20040050064A (ko)	2004-06-14	플랫 마그네트론
JPH0645093A (ja)	1994-02-18	プラズマ発生装置
RU2032766C1 (ru)	1995-04-10	Магнетронное распылительное устройство
EP0778608A2 (en)	1997-06-11	Plasma generators and methods of generating plasmas
GB2209769A (en)	1989-05-24	Sputter coating