NO129877B - - Google Patents

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Publication number
NO129877B
NO129877B NO00985/69A NO98569A NO129877B NO 129877 B NO129877 B NO 129877B NO 00985/69 A NO00985/69 A NO 00985/69A NO 98569 A NO98569 A NO 98569A NO 129877 B NO129877 B NO 129877B
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NO
Norway
Prior art keywords
parts
conductive
insulating
conductive coating
voltage
Prior art date
Application number
NO00985/69A
Other languages
English (en)
Inventor
D Robinson
J Beale
J Shannon
J Kerr
M Das
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of NO129877B publication Critical patent/NO129877B/no

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

Anordning ved elektriske vakuumovner.
I elektriske vakuumovner oppstår det på grunn av det lave trykk i den gass som fyller det rom hvori selve ovnen er innesluttet glimming ved de spenningsførende deler for ovnen. Hvis det eksempelvis gjel-der en høyfrekvensovn, vil glimmingen finne sted ved denne spole eller tilledningene til denne. Denne glimming kan di-rekte skade de deler hvorfra glimmingen går ut men virker også indirekte skadelig ved den ozondannelse som den bevirker og som ved oksydering skader både metall-deler og deler av isolasjonsmaterial.
For å unngå denne glimdannelse er det tidligere kjent å bekle ovnens induksjonsspole og andre spenningsførende deler med et lag av isolasjonsmaterial. I hen-hold til foreliggende oppfinnelse er dette isolerende lag på utsiden forsynt med et ledende belegg som hensiktsmessig er av et umagnetisk material med forholdsvis høy ledningsmotstand og som i hver vinning er delt opp i et nødvendig antall deler som er ført til jordpotensial eller annet passende potensial. Herved oppnås at spennings-påkjenningen konsentreres til det isolerende belegg slik at den fortynnede gass som omgir de spenningsførende deler helt avlastes fra elektrisk påkjenning.
Anordningen må dog være slik at det ikke kan oppnås noen sterke strømmer i det ledende belegg, hverken ved kontakt med spenningsførende deler med forskjel-lig potensial eller ved elektriske spennin-ger. Da det på den annen side bør være en forholdsvis god ledningsevne i det ledende belegg er det derfor som regel nød-vendig å dele opp skjermen i flere atskilte deler, idet det dog over sprekkene eller mellomrommene mellom disse deler legges et ledende belegg som er isolert fra skjer-mens deler. Det som er sagt ovenfor kan hensiktsmessig uttrykkes slik at de spen-ningsførende deler bør være avskjermet fra gassen i vakuumbeholderen ved hjelp av en skjerm som elektrostatisk sett er «tett». En slik «tett» avskjerming kan oppnås enten ved at de spenningsførende deler bekles med en isolasjonslakk som på ytter-siden bekles med et tynt lag av en såkalt glimbeskyttelseslakk hensiktsmessig med en forholdsvis høy motstand. I stedet for å overtrekke de spenningsførende deler med en isolerende lakk som på utsiden for-synes med et mer eller mindre ledende belegg kan også det spenningsførende legeme, i hvert fall hvis det har enkel form, iso-leres ved hjelp av en bevikling av et bånd av isolasjonsmaterial, som på den ene side er forsynt med et ledende belegg, eksempelvis en matallfolie. Denne folie skal ha en bredde som er mindre enn bredden av båndet slik at metallfolien i en vinning ikke kommer i berøring med metallfolien i en tilleggende vinning.
På vedføyete tegning viser fig. 1 i ver-tikalriss en induksjonsspole i en elektrisk ovn, som antas å være innesluttet i en va-kuumbeholder som ikke er vist på tegningen.
Fig. 2 viser induksjonsspolen sett
ovenfra.
På tegningen betegner 1 generelt de enkelte vinninger i spolen mens 2 betegner tilledningene til spolen. 3 betegner en del av veggen i den beholder som omgir spolen og 4 viser skjematisk en isolerende
tetningsskive, som ligger tettende mot va-kuumbeholderens vegg ved et hull i denne
hvorigjennom tilledningene 2 passerer ut
av beholderen.
Fig. 3 viser i tverrsnitt en utførelses-form for den leder som danner spolen. I
figuren betegner 5 den rørformete kob-berleder som er omgitt av et hylster av
isolasjonsmaterial 6, som igjen er omgitt
av en ledende skjerm 7. Denne skjerm 7
er, som vist i fig. 1, gjennom forbindelses-ledninger 8 ført til jord eller et annet passende potensial.
Som det fremgår av fig. 2 er det ledende belegg 7 oppdelt i flere deler langs
spolen slik at det oppstår mellomrom som
er antydet med strekete linjer. Mellomrommene er dekket av ikke metallbelagte
partier 9 av isolasjonsmaterial, men disse
ubelagte partier er på den ene kant over-dekket av metallbånd 10, som på den annen kant er isolert fra delene av det ledende belegg.

Claims (3)

1. Anordning for unngåelse av glimdannelse i elektriske induksjonsovner som arbeider i et evakuert rom, hvor ovnens
induksjonsspole og andre spenningsførende deler er belagt med et isolerende lag, karakterisert ved at dette isolerende lag (6) på utsiden er belagt med et ledende lag (7), som i hver vinning er delt opp i et nødvendig antall deler som er ført til jordpotensial (8) eller annet passende potensial.
2. Anordning som angitt i påstand 1, karakterisert ved at mellomrommet mellom to ledende belegg som ligger nær opp-til hverandre er dekket av isolasjonsmaterial (9), på hvilket et ledende lag (10) er anbragt på en slik måte at det har kontakt med det ene nedenfor-liggende ledende belegg (7) og er isolert mot det annet, samt er ført til et jordpotensial (8) eller et annet passende potensial.
3. Anordning som angitt i påstand 1, karakterisert ved at de spenningsførende deler (1, 2) av ovnen som befinner seg i vakuumrommet er isolert ved hjelp av isolerende bånd, som på den ene side er forsynt med et ledende belegg som har mindre bredde enn båndene.
NO00985/69A 1968-03-11 1969-03-08 NO129877B (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB01845/68A GB1261723A (en) 1968-03-11 1968-03-11 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
NO129877B true NO129877B (no) 1974-06-04

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Application Number Title Priority Date Filing Date
NO00985/69A NO129877B (no) 1968-03-11 1969-03-08

Country Status (13)

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US (1) US3653978A (no)
JP (2) JPS5134269B1 (no)
AT (1) AT311417B (no)
BE (1) BE729657A (no)
CA (1) CA934882A (no)
CH (1) CH505473A (no)
DE (1) DE1913052C2 (no)
DK (1) DK135196B (no)
ES (1) ES385205A1 (no)
FR (1) FR2003656A1 (no)
GB (1) GB1261723A (no)
NL (1) NL162253C (no)
NO (1) NO129877B (no)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1316555A (no) * 1969-08-12 1973-05-09
US3895966A (en) * 1969-09-30 1975-07-22 Sprague Electric Co Method of making insulated gate field effect transistor with controlled threshold voltage
US3988761A (en) * 1970-02-06 1976-10-26 Sony Corporation Field-effect transistor and method of making the same
USRE28500E (en) * 1970-12-14 1975-07-29 Low noise field effect transistor with channel having subsurface portion of high conductivity
US3775191A (en) * 1971-06-28 1973-11-27 Bell Canada Northern Electric Modification of channel regions in insulated gate field effect transistors
GB1345818A (en) * 1971-07-27 1974-02-06 Mullard Ltd Semiconductor devices
JPS5123432B2 (no) * 1971-08-26 1976-07-16
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
BE792939A (no) * 1972-04-10 1973-04-16 Rca Corp
US3814992A (en) * 1972-06-22 1974-06-04 Ibm High performance fet
US4017887A (en) * 1972-07-25 1977-04-12 The United States Of America As Represented By The Secretary Of The Air Force Method and means for passivation and isolation in semiconductor devices
JPS4951879A (no) * 1972-09-20 1974-05-20
GB1443434A (en) * 1973-01-22 1976-07-21 Mullard Ltd Semiconductor devices
JPS49105490A (no) * 1973-02-07 1974-10-05
US3872491A (en) * 1973-03-08 1975-03-18 Sprague Electric Co Asymmetrical dual-gate FET
US3867204A (en) * 1973-03-19 1975-02-18 Motorola Inc Manufacture of semiconductor devices
JPS5010083A (no) * 1973-05-23 1975-02-01
US3983572A (en) * 1973-07-09 1976-09-28 International Business Machines Semiconductor devices
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices
US3855008A (en) * 1973-08-30 1974-12-17 Gen Instrument Corp Mos integrated circuit process
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
US3874937A (en) * 1973-10-31 1975-04-01 Gen Instrument Corp Method for manufacturing metal oxide semiconductor integrated circuit of reduced size
US4075754A (en) * 1974-02-26 1978-02-28 Harris Corporation Self aligned gate for di-CMOS
US3876472A (en) * 1974-04-15 1975-04-08 Rca Corp Method of achieving semiconductor substrates having similar surface resistivity
US3958266A (en) * 1974-04-19 1976-05-18 Rca Corporation Deep depletion insulated gate field effect transistors
US3912545A (en) * 1974-05-13 1975-10-14 Motorola Inc Process and product for making a single supply N-channel silicon gate device
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
US4051504A (en) * 1975-10-14 1977-09-27 General Motors Corporation Ion implanted zener diode
US4125415A (en) * 1975-12-22 1978-11-14 Motorola, Inc. Method of making high voltage semiconductor structure
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
US4104784A (en) * 1976-06-21 1978-08-08 National Semiconductor Corporation Manufacturing a low voltage n-channel MOSFET device
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
US4108686A (en) * 1977-07-22 1978-08-22 Rca Corp. Method of making an insulated gate field effect transistor by implanted double counterdoping
US4350991A (en) * 1978-01-06 1982-09-21 International Business Machines Corp. Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US4393575A (en) * 1979-03-09 1983-07-19 National Semiconductor Corporation Process for manufacturing a JFET with an ion implanted stabilization layer
JPS56501028A (no) * 1979-08-13 1981-07-23
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
JPS593964A (ja) * 1982-06-29 1984-01-10 Semiconductor Res Found 半導体集積回路
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
DE3628754A1 (de) * 1986-08-27 1988-03-17 Nordmende Gmbh Fernsehempfaenger mit einem gehaeuse
JPH0797606B2 (ja) * 1986-10-22 1995-10-18 株式会社日立製作所 半導体集積回路装置の製造方法
DE3708170A1 (de) * 1987-03-13 1988-09-22 Electronic Werke Deutschland Gehaeuse fuer ein geraet der unterhaltungselektronik
US4990974A (en) * 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
DE4106533A1 (de) * 1991-03-01 1992-09-03 Electronic Werke Deutschland Gehaeuse fuer einen fernsehempfaenger
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5401987A (en) * 1993-12-01 1995-03-28 Imp, Inc. Self-cascoding CMOS device
KR100273291B1 (ko) * 1998-04-20 2001-01-15 김영환 모스 전계 효과 트랜지스터의 제조 방법
JP2005026464A (ja) * 2003-07-02 2005-01-27 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPWO2007004258A1 (ja) * 2005-06-30 2009-01-22 スパンション エルエルシー 半導体装置、およびその製造方法
US9002781B2 (en) 2010-08-17 2015-04-07 Fujitsu Limited Annotating environmental data represented by characteristic functions
US8874607B2 (en) * 2010-08-17 2014-10-28 Fujitsu Limited Representing sensor data as binary decision diagrams
US9138143B2 (en) 2010-08-17 2015-09-22 Fujitsu Limited Annotating medical data represented by characteristic functions
US8930394B2 (en) * 2010-08-17 2015-01-06 Fujitsu Limited Querying sensor data stored as binary decision diagrams
US9075908B2 (en) 2011-09-23 2015-07-07 Fujitsu Limited Partitioning medical binary decision diagrams for size optimization
US9176819B2 (en) 2011-09-23 2015-11-03 Fujitsu Limited Detecting sensor malfunctions using compression analysis of binary decision diagrams

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
DE1439740A1 (de) * 1964-11-06 1970-01-22 Telefunken Patent Feldeffekttransistor mit isolierter Steuerelektrode
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method
NL149638B (nl) * 1966-04-14 1976-05-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting bevattende ten minste een veldeffecttransistor, en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3472712A (en) * 1966-10-27 1969-10-14 Hughes Aircraft Co Field-effect device with insulated gate
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions

Also Published As

Publication number Publication date
ES385205A1 (es) 1973-04-01
BE729657A (no) 1969-09-10
CH505473A (de) 1971-03-31
DK135196C (no) 1977-08-29
JPS5134269B1 (no) 1976-09-25
US3653978A (en) 1972-04-04
DK135196B (da) 1977-03-14
AT311417B (de) 1973-11-12
JPS5135835B1 (no) 1976-10-05
GB1261723A (en) 1972-01-26
DE1913052C2 (de) 1983-06-09
DE1913052A1 (de) 1969-10-02
NL162253B (nl) 1979-11-15
FR2003656A1 (no) 1969-11-14
NL162253C (nl) 1980-04-15
CA934882A (en) 1973-10-02
NL6903441A (no) 1969-09-15

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