NO20004236D0 - Segmenterte ordlinjer - Google Patents

Segmenterte ordlinjer

Info

Publication number
NO20004236D0
NO20004236D0 NO20004236A NO20004236A NO20004236D0 NO 20004236 D0 NO20004236 D0 NO 20004236D0 NO 20004236 A NO20004236 A NO 20004236A NO 20004236 A NO20004236 A NO 20004236A NO 20004236 D0 NO20004236 D0 NO 20004236D0
Authority
NO
Norway
Prior art keywords
segment
memory
bit lines
bit
sensing means
Prior art date
Application number
NO20004236A
Other languages
English (en)
Other versions
NO20004236L (no
Inventor
Michael O Thompson
Richard H Womack
Johan Karlsson
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20004236A priority Critical patent/NO20004236L/no
Publication of NO20004236D0 publication Critical patent/NO20004236D0/no
Priority to US09/899,096 priority patent/US20020024835A1/en
Priority to AU2002223159A priority patent/AU2002223159B2/en
Priority to KR1020037002558A priority patent/KR100540266B1/ko
Priority to NO20014136A priority patent/NO318368B1/no
Priority to AT01985301T priority patent/ATE290711T1/de
Priority to CA002420378A priority patent/CA2420378C/en
Priority to CNB018178707A priority patent/CN100530420C/zh
Priority to EP01985301A priority patent/EP1316090B1/en
Priority to JP2002529782A priority patent/JP3848620B2/ja
Priority to PCT/NO2001/000348 priority patent/WO2002025665A2/en
Priority to DK01985301T priority patent/DK1316090T3/da
Priority to AU2315902A priority patent/AU2315902A/xx
Priority to RU2003108726/09A priority patent/RU2245584C2/ru
Priority to ES01985301T priority patent/ES2238053T3/es
Priority to DE60109307T priority patent/DE60109307T2/de
Priority to US10/088,913 priority patent/US20030137865A1/en
Publication of NO20004236L publication Critical patent/NO20004236L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Peptides Or Proteins (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Read Only Memory (AREA)
  • Magnetic Record Carriers (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
NO20004236A 2000-07-07 2000-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme NO20004236L (no)

Priority Applications (17)

Application Number Priority Date Filing Date Title
NO20004236A NO20004236L (no) 2000-08-24 2000-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme
US09/899,096 US20020024835A1 (en) 2000-07-07 2001-07-06 Non-volatile passive matrix device and method for readout of the same
DE60109307T DE60109307T2 (de) 2000-08-24 2001-08-24 Nichtfluechtige passive speicherarray und sein leseverfahren
EP01985301A EP1316090B1 (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same
JP2002529782A JP3848620B2 (ja) 2000-08-24 2001-08-24 不揮発性受動マトリックス装置および同装置の読み出し方法
NO20014136A NO318368B1 (no) 2000-08-24 2001-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmate for utlesing av samme
AT01985301T ATE290711T1 (de) 2000-08-24 2001-08-24 Nichtfluechtige passive speicherarray und sein leseverfahren
CA002420378A CA2420378C (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same
CNB018178707A CN100530420C (zh) 2000-08-24 2001-08-24 非易失性无源矩阵器件及其读出方法
AU2002223159A AU2002223159B2 (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same
KR1020037002558A KR100540266B1 (ko) 2000-08-24 2001-08-24 비휘발성 수동 매트릭스 디바이스 및 그 독출 방법
PCT/NO2001/000348 WO2002025665A2 (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same
DK01985301T DK1316090T3 (da) 2000-08-24 2001-08-24 Ikke-flygtig passiv matrix og fremgangsmåde til udlæsning af denne
AU2315902A AU2315902A (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same
RU2003108726/09A RU2245584C2 (ru) 2000-08-24 2001-08-24 Энергонезависимая пассивная матрица, способ считывания из подобной матрицы и устройство трехмерного хранения данных
ES01985301T ES2238053T3 (es) 2000-08-24 2001-08-24 Matriz pasiva no volatil y metodo para la lectura de la misma.
US10/088,913 US20030137865A1 (en) 2000-08-24 2001-09-24 Non-volatile passive matrix device and method for readout of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20004236A NO20004236L (no) 2000-08-24 2000-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme

Publications (2)

Publication Number Publication Date
NO20004236D0 true NO20004236D0 (no) 2000-08-24
NO20004236L NO20004236L (no) 2002-02-25

Family

ID=19911499

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20004236A NO20004236L (no) 2000-07-07 2000-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme

Country Status (14)

Country Link
US (1) US20030137865A1 (no)
EP (1) EP1316090B1 (no)
JP (1) JP3848620B2 (no)
KR (1) KR100540266B1 (no)
CN (1) CN100530420C (no)
AT (1) ATE290711T1 (no)
AU (2) AU2315902A (no)
CA (1) CA2420378C (no)
DE (1) DE60109307T2 (no)
DK (1) DK1316090T3 (no)
ES (1) ES2238053T3 (no)
NO (1) NO20004236L (no)
RU (1) RU2245584C2 (no)
WO (1) WO2002025665A2 (no)

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US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
NO314524B1 (no) * 2001-11-30 2003-03-31 Thin Film Electronics Asa Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten
US6996652B1 (en) * 2002-09-19 2006-02-07 Inapac Technology, Inc. High-speed segmented data bus architecture
NO324607B1 (no) * 2003-11-24 2007-11-26 Thin Film Electronics Asa Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering
KR100576484B1 (ko) * 2003-12-09 2006-05-10 주식회사 하이닉스반도체 차동 데이터를 가지는 불휘발성 강유전체 메모리 장치
NO324029B1 (no) * 2004-09-23 2007-07-30 Thin Film Electronics Asa Lesemetode og deteksjonsanordning
CN100466036C (zh) * 2005-06-30 2009-03-04 精工爱普生株式会社 显示装置及电子设备
TWI260643B (en) 2005-12-30 2006-08-21 Ind Tech Res Inst Organic memory
CN1996495B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 有机存储器之位单元
CN1996486B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 数字感测电路
CN100524519C (zh) * 2005-12-31 2009-08-05 财团法人工业技术研究院 有机存储器
ES2301344B1 (es) * 2006-03-14 2009-05-01 Universidad De Zaragoza Sistema de comunicaciones digitales para entornos residenciales, asistenciales, oficinas y similares.
EP1944763A1 (en) * 2007-01-12 2008-07-16 STMicroelectronics S.r.l. Reading circuit and method for data storage system
US9574326B2 (en) 2012-08-02 2017-02-21 Harnischfeger Technologies, Inc. Depth-related help functions for a shovel training simulator
AU2014202349A1 (en) 2012-08-02 2014-05-22 Harnischfeger Technologies, Inc. Depth-related help functions for a wheel loader training simulator
JP5714681B2 (ja) * 2013-10-25 2015-05-07 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9773553B1 (en) * 2016-08-19 2017-09-26 Micron Technology, Inc. Segmented memory and operation
DE102016012071A1 (de) 2016-10-10 2018-04-12 Kai-Uwe Demasius Matrix mit kapazitiver Steuerungsvorrichtung
CN110073440B (zh) 2016-10-10 2022-04-29 塞姆隆有限责任公司 电容矩阵布置及其激励方法
US11102437B2 (en) * 2018-11-20 2021-08-24 Samsung Electronics Co., Ltd. Memory circuit and semiconductor device
JP2020088497A (ja) * 2018-11-20 2020-06-04 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． メモリ回路、半導体装置および移動体デバイス
US12407532B2 (en) * 2020-02-18 2025-09-02 International Business Machines Corporation Gain cell memory based physically unclonable function
KR20210143612A (ko) * 2020-05-20 2021-11-29 삼성전자주식회사 비휘발성 메모리 및 비휘발성 메모리의 동작 방법
CN111696602A (zh) * 2020-05-22 2020-09-22 珠海拍字节信息科技有限公司 铁电存储器及其操作方法
US11309034B2 (en) * 2020-07-15 2022-04-19 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
CN114093398A (zh) * 2021-11-26 2022-02-25 无锡拍字节科技有限公司 一种铁电存储器的位线布局及铁电存储器

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US4599709A (en) * 1984-02-17 1986-07-08 At&T Bell Laboratories Byte organized static memory
SU1378682A1 (ru) * 1986-05-18 1994-12-30 В.И. Овчаренко Матричный накопитель для постоянного запоминающего устройства
SU1596392A1 (ru) * 1987-10-23 1990-09-30 Предприятие П/Я Х-5737 Матричный накопитель и способ управлени записью, считыванием и стиранием информации в накопителе
DE68923573T2 (de) * 1988-03-31 1996-01-18 Sony Corp Eingangsschaltungen.
JP2982905B2 (ja) * 1989-10-02 1999-11-29 三菱電機株式会社 ダイナミック型半導体記憶装置
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
KR950011965B1 (ko) * 1992-02-19 1995-10-12 삼성전자주식회사 불휘발성 반도체 메모리 장치
TW231343B (no) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
US5337414A (en) * 1992-09-22 1994-08-09 Unisys Corporation Mass data storage and retrieval system
US5424997A (en) * 1994-03-15 1995-06-13 National Semiconductor Corporation Non-volatile semiconductor memory having switching devices for segmentation of a memory page and a method thereof
US5567636A (en) * 1995-02-27 1996-10-22 Motorola Inc. Process for forming a nonvolatile random access memory array
US5574692A (en) * 1995-06-07 1996-11-12 Lsi Logic Corporation Memory testing apparatus for microelectronic integrated circuit
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory

Also Published As

Publication number Publication date
ATE290711T1 (de) 2005-03-15
AU2315902A (en) 2002-04-02
DK1316090T3 (da) 2005-05-30
WO2002025665A3 (en) 2002-05-16
EP1316090A2 (en) 2003-06-04
CN1471712A (zh) 2004-01-28
JP3848620B2 (ja) 2006-11-22
RU2245584C2 (ru) 2005-01-27
WO2002025665A2 (en) 2002-03-28
ES2238053T3 (es) 2005-08-16
CN100530420C (zh) 2009-08-19
DE60109307T2 (de) 2006-04-13
US20030137865A1 (en) 2003-07-24
NO20004236L (no) 2002-02-25
CA2420378C (en) 2006-05-09
KR100540266B1 (ko) 2006-01-10
JP2004510283A (ja) 2004-04-02
KR20030059110A (ko) 2003-07-07
DE60109307D1 (de) 2005-04-14
EP1316090B1 (en) 2005-03-09
AU2002223159B2 (en) 2005-04-14
CA2420378A1 (en) 2002-03-28

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Legal Events

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