NO20031364L - Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse - Google Patents

Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse

Info

Publication number
NO20031364L
NO20031364L NO20031364A NO20031364A NO20031364L NO 20031364 L NO20031364 L NO 20031364L NO 20031364 A NO20031364 A NO 20031364A NO 20031364 A NO20031364 A NO 20031364A NO 20031364 L NO20031364 L NO 20031364L
Authority
NO
Norway
Prior art keywords
addressable memory
memory devices
detection amplifier
amplifier systems
matrix addressable
Prior art date
Application number
NO20031364A
Other languages
English (en)
Other versions
NO20031364D0 (no
NO320017B1 (no
Inventor
Robert Schweickert
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20031364A priority Critical patent/NO320017B1/no
Publication of NO20031364D0 publication Critical patent/NO20031364D0/no
Priority to KR1020057017988A priority patent/KR100687998B1/ko
Priority to PCT/NO2004/000086 priority patent/WO2004086406A1/en
Priority to RU2005131193/09A priority patent/RU2311695C2/ru
Priority to DE602004014349T priority patent/DE602004014349D1/de
Priority to CA002520492A priority patent/CA2520492A1/en
Priority to US10/808,513 priority patent/US7113437B2/en
Priority to JP2006500738A priority patent/JP2006521645A/ja
Priority to AT04723432T priority patent/ATE398329T1/de
Priority to EP04723432A priority patent/EP1606820B1/en
Priority to AU2004222869A priority patent/AU2004222869A1/en
Priority to CN200480014391.7A priority patent/CN1795509A/zh
Publication of NO20031364L publication Critical patent/NO20031364L/no
Publication of NO320017B1 publication Critical patent/NO320017B1/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Static Random-Access Memory (AREA)
  • Facsimile Scanning Arrangements (AREA)
  • Facsimile Heads (AREA)
  • Character Input (AREA)
  • Read Only Memory (AREA)
  • Amplifiers (AREA)
NO20031364A 2003-03-26 2003-03-26 Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse NO320017B1 (no)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NO20031364A NO320017B1 (no) 2003-03-26 2003-03-26 Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse
CN200480014391.7A CN1795509A (zh) 2003-03-26 2004-03-25 读出放大器系统和提供有读出放大器的矩阵可寻址存储器件
US10/808,513 US7113437B2 (en) 2003-03-26 2004-03-25 Sense amplifier systems and a matrix-addressable memory device provided therewith
PCT/NO2004/000086 WO2004086406A1 (en) 2003-03-26 2004-03-25 Sense amplifier systems and a matrix-addressable memory device provided therewith
RU2005131193/09A RU2311695C2 (ru) 2003-03-26 2004-03-25 Устройство считывания заряда (варианты) и запоминающее устройство с матричной адресацией, снабженное таким устройством
DE602004014349T DE602004014349D1 (de) 2003-03-26 2004-03-25 Leseverstärkersysteme und damit ausgestattete matrixadressierbare speichereinrichtung
CA002520492A CA2520492A1 (en) 2003-03-26 2004-03-25 Sense amplifier systems and a matrix-addressable memory device provided therewith
KR1020057017988A KR100687998B1 (ko) 2003-03-26 2004-03-25 전하 감지 장치 및 전하 감지 장치가 제공되는 매트릭스-어드레싱가능 메모리 장치
JP2006500738A JP2006521645A (ja) 2003-03-26 2004-03-25 感度増幅器システムおよびそれが設けられたマトリックス上でアドレス指定可能なメモリ素子
AT04723432T ATE398329T1 (de) 2003-03-26 2004-03-25 Leseverstärkersysteme und damit ausgestattete matrixadressierbare speichereinrichtung
EP04723432A EP1606820B1 (en) 2003-03-26 2004-03-25 Sense amplifier systems and a matrix-addressable memory device provided therewith
AU2004222869A AU2004222869A1 (en) 2003-03-26 2004-03-25 Sense amplifier systems and a matrix-addressable memory device provided therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20031364A NO320017B1 (no) 2003-03-26 2003-03-26 Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse

Publications (3)

Publication Number Publication Date
NO20031364D0 NO20031364D0 (no) 2003-03-26
NO20031364L true NO20031364L (no) 2004-09-27
NO320017B1 NO320017B1 (no) 2005-10-10

Family

ID=19914603

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20031364A NO320017B1 (no) 2003-03-26 2003-03-26 Deteksjonsforsterkersystemer og matriseadresserbar minneinnretning med ±n av disse

Country Status (12)

Country Link
US (1) US7113437B2 (no)
EP (1) EP1606820B1 (no)
JP (1) JP2006521645A (no)
KR (1) KR100687998B1 (no)
CN (1) CN1795509A (no)
AT (1) ATE398329T1 (no)
AU (1) AU2004222869A1 (no)
CA (1) CA2520492A1 (no)
DE (1) DE602004014349D1 (no)
NO (1) NO320017B1 (no)
RU (1) RU2311695C2 (no)
WO (1) WO2004086406A1 (no)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11699475B2 (en) 2018-05-09 2023-07-11 Micron Technology, Inc. Ferroelectric memory plate power reduction

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US6922350B2 (en) * 2002-09-27 2005-07-26 Intel Corporation Reducing the effect of write disturbs in polymer memories
NO324029B1 (no) 2004-09-23 2007-07-30 Thin Film Electronics Asa Lesemetode og deteksjonsanordning
US8081715B1 (en) * 2005-01-27 2011-12-20 Marvell International Ltd. Device and method for sampling based on matched filtering
JP4374549B2 (ja) * 2005-12-20 2009-12-02 セイコーエプソン株式会社 強誘電体メモリ装置、電子機器および強誘電体メモリ装置の駆動方法
KR100769796B1 (ko) * 2006-05-12 2007-10-25 주식회사 하이닉스반도체 저전압용 롬
RU2339117C1 (ru) * 2007-05-03 2008-11-20 Институт физики полупроводников Сибирского отделения Российской академии наук Способ считывания сигнального заряда с матричного пзи-фотоприемника
RU2341850C1 (ru) * 2007-06-05 2008-12-20 Институт физики полупроводников Сибирского отделения Российской академии наук Устройство считывания сигнального заряда с матричного пзи-фотоприемника
RU2339118C1 (ru) * 2007-06-14 2008-11-20 Институт физики полупроводников Сибирского отделения Российской академии наук Способ считывания сигнального заряда с матричного пзи-фотоприемника
US7532528B2 (en) * 2007-06-30 2009-05-12 Intel Corporation Sense amplifier method and arrangement
FR2918523B1 (fr) * 2007-07-06 2011-02-11 Excem Dispositif d'interface pseudo-differentiel avec circuit d'equilibrage
RU2396597C1 (ru) * 2009-06-15 2010-08-10 Учреждение Российской академии наук Институт физики полупроводников им. А.В. Ржанова Сибирского отделения РАН (ИФП СО РАН) Устройство считывания сигнального заряда с матричного пзи-фотоприемника
US8605520B2 (en) * 2010-09-22 2013-12-10 Magic Technologies, Inc. Replaceable, precise-tracking reference lines for memory products
US9324405B2 (en) * 2010-11-30 2016-04-26 Radiant Technologies, Inc. CMOS analog memories utilizing ferroelectric capacitors
KR101798992B1 (ko) * 2011-01-10 2017-12-21 삼성전자주식회사 네거티브 커패시턴스 회로를 포함하는 감지 증폭기와, 이를 포함하는 장치들
US8693273B2 (en) 2012-01-06 2014-04-08 Headway Technologies, Inc. Reference averaging for MRAM sense amplifiers
FR3005195B1 (fr) * 2013-04-24 2016-09-02 Soitec Silicon On Insulator Dispositif de memoire avec circuits de reference exploites dynamiquement.
US8976613B2 (en) * 2013-07-23 2015-03-10 Taiwan Semiconductor Manufacturing Company Ltd. Differential current sensing scheme for magnetic random access memory
US9530501B2 (en) 2014-12-31 2016-12-27 Freescale Semiconductor, Inc. Non-volatile static random access memory (NVSRAM) having a shared port
US9460760B2 (en) 2015-01-23 2016-10-04 Globalfoundries Inc. Data-dependent self-biased differential sense amplifier
US9466394B1 (en) 2015-04-09 2016-10-11 Freescale Semiconductor, Inc. Mismatch-compensated sense amplifier for highly scaled technology
US9786346B2 (en) 2015-05-20 2017-10-10 Micron Technology, Inc. Virtual ground sensing circuitry and related devices, systems, and methods for crosspoint ferroelectric memory
US10032505B2 (en) 2015-07-13 2018-07-24 International Business Machines Corporation Dynamic random access memory with pseudo differential sensing
US9552869B1 (en) 2016-01-25 2017-01-24 International Business Machines Corporation Random access memory with pseudo-differential sensing
US9799388B1 (en) 2016-04-28 2017-10-24 Micron Technology, Inc. Charge sharing between memory cell plates using a conductive path
US9715919B1 (en) 2016-06-21 2017-07-25 Micron Technology, Inc. Array data bit inversion
US9899073B2 (en) 2016-06-27 2018-02-20 Micron Technology, Inc. Multi-level storage in ferroelectric memory
US10290341B2 (en) * 2017-02-24 2019-05-14 Micron Technology, Inc. Self-reference for ferroelectric memory
US10867653B2 (en) * 2018-04-20 2020-12-15 Micron Technology, Inc. Access schemes for protecting stored data in a memory device
CN111565032B (zh) * 2019-02-13 2023-11-10 上海耕岩智能科技有限公司 信号转换电路及信号读出电路架构
US12205633B2 (en) * 2022-06-14 2025-01-21 Globalfoundries U.S. Inc. Non-volatile memory device with reference voltage circuit including column(s) of reference bit cells adjacent columns of memory bit cells within a memory cell array

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11699475B2 (en) 2018-05-09 2023-07-11 Micron Technology, Inc. Ferroelectric memory plate power reduction

Also Published As

Publication number Publication date
NO20031364D0 (no) 2003-03-26
WO2004086406A1 (en) 2004-10-07
CN1795509A (zh) 2006-06-28
CA2520492A1 (en) 2004-10-07
JP2006521645A (ja) 2006-09-21
RU2311695C2 (ru) 2007-11-27
RU2005131193A (ru) 2006-05-27
WO2004086406A8 (en) 2006-04-20
US7113437B2 (en) 2006-09-26
EP1606820B1 (en) 2008-06-11
US20050105358A1 (en) 2005-05-19
NO320017B1 (no) 2005-10-10
ATE398329T1 (de) 2008-07-15
AU2004222869A1 (en) 2004-10-07
EP1606820A1 (en) 2005-12-21
KR20050118207A (ko) 2005-12-15
DE602004014349D1 (de) 2008-07-24
KR100687998B1 (ko) 2007-02-27

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