NO20041523L - Lysemitterende halvlederelement - Google Patents

Lysemitterende halvlederelement

Info

Publication number
NO20041523L
NO20041523L NO20041523A NO20041523A NO20041523L NO 20041523 L NO20041523 L NO 20041523L NO 20041523 A NO20041523 A NO 20041523A NO 20041523 A NO20041523 A NO 20041523A NO 20041523 L NO20041523 L NO 20041523L
Authority
NO
Norway
Prior art keywords
light emitting
semiconductor element
emitting semiconductor
light
semiconductor
Prior art date
Application number
NO20041523A
Other languages
English (en)
Inventor
Shinsuke Fujiwara
Takao Nakamura
Hiroki Mori
Koji Katayama
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003328088A external-priority patent/JP3900128B2/ja
Priority claimed from JP2003390261A external-priority patent/JP2005150656A/ja
Priority claimed from JP2003401560A external-priority patent/JP2005166803A/ja
Priority claimed from JP2003401557A external-priority patent/JP2005166802A/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of NO20041523L publication Critical patent/NO20041523L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
    • B60Q1/26—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
    • B60Q1/32—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating vehicle sides, e.g. clearance lights
    • B60Q1/326—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating vehicle sides, e.g. clearance lights on or for wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q1/00—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
    • B60Q1/02—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments
    • B60Q1/24—Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments for lighting other areas than only the way ahead
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Q—ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
    • B60Q2900/00—Features of lamps not covered by other groups in B60Q
    • B60Q2900/30—Lamps commanded by wireless transmissions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2200/00—Type of vehicle
    • B60Y2200/10—Road Vehicles
    • B60Y2200/11—Passenger cars; Automobiles

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
NO20041523A 2003-09-19 2004-04-06 Lysemitterende halvlederelement NO20041523L (no)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003328088A JP3900128B2 (ja) 2003-09-19 2003-09-19 ＺｎＳｅ系発光素子
JP2003390261A JP2005150656A (ja) 2003-11-20 2003-11-20 半導体発光素子
JP2003401560A JP2005166803A (ja) 2003-12-01 2003-12-01 ＺｎＳｅ系発光素子
JP2003401557A JP2005166802A (ja) 2003-12-01 2003-12-01 半導体発光素子

Publications (1)

Publication Number Publication Date
NO20041523L true NO20041523L (no) 2005-03-21

Family

ID=34199158

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20041523A NO20041523L (no) 2003-09-19 2004-04-06 Lysemitterende halvlederelement

Country Status (6)

Country Link
US (1) US20050062054A1 (no)
EP (1) EP1517379A3 (no)
KR (1) KR20050029103A (no)
CN (1) CN100342557C (no)
NO (1) NO20041523L (no)
TW (1) TWI232599B (no)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100561840B1 (ko) * 2003-07-09 2006-03-16 삼성전자주식회사 전극층, 이를 구비하는 발광소자 및 전극층 제조방법
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
US8541803B2 (en) 2009-05-05 2013-09-24 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
WO2010129464A1 (en) 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
KR20120092549A (ko) 2009-06-30 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 조정가능 색 온도를 갖는 백색광 전계발광 디바이스
EP2449608A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
CN104600565B (zh) * 2015-01-22 2017-08-25 中国科学院半导体研究所 一种具有低电子泄漏的砷化镓激光器及其制作方法
JP2017085035A (ja) 2015-10-30 2017-05-18 国立研究開発法人理化学研究所 紫外発光ダイオードおよびそれを備える電気機器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0391270A (ja) * 1989-09-01 1991-04-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
US5299217A (en) * 1990-10-11 1994-03-29 Hitachi, Ltd. Semiconductor light-emitting device with cadmium zinc selenide layer
EP0556461B1 (en) * 1992-02-19 1998-01-14 Sony Corporation Semiconductor laser
US5362974A (en) * 1992-06-10 1994-11-08 The Furukawa Electric Co., Ltd. Group II-VI material semiconductor optical device with strained multiquantum barriers
JPH0773140B2 (ja) * 1993-02-09 1995-08-02 日本電気株式会社 半導体レーザ
KR950010253A (ko) * 1993-09-07 1995-04-26 오가 노리오 반도체발광장치
JP2692563B2 (ja) * 1993-12-28 1997-12-17 日本電気株式会社 半導体レーザ埋め込み構造
JPH07231142A (ja) * 1994-02-18 1995-08-29 Mitsubishi Electric Corp 半導体発光素子
JPH07321409A (ja) * 1994-05-24 1995-12-08 Matsushita Electric Ind Co Ltd 半導体レーザー素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
JPH09293937A (ja) * 1996-02-29 1997-11-11 Sony Corp 半導体発光素子
EP0854473B1 (en) * 1997-01-17 2002-09-25 Matsushita Electric Industrial Co., Ltd. Optical pickup and optical disk apparatus using the same
DE19703615A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Optoelektronisches Halbleiterbauelement
KR19990014304A (ko) * 1997-07-30 1999-02-25 아사구사 나오유끼 반도체 레이저, 반도체 발광 소자 및 그 제조 방법
JPH11150334A (ja) * 1997-11-14 1999-06-02 Sony Corp 半導体発光素子
JP3533995B2 (ja) * 1999-07-01 2004-06-07 住友電気工業株式会社 発光ダイオードおよびその製造方法
WO2002082602A2 (en) * 2001-02-28 2002-10-17 The Research Foundation Of State University Of New York Semiconductor laser with reduced temperature sensitivity
JP4277246B2 (ja) * 2001-07-25 2009-06-10 信越半導体株式会社 発光素子
JP4016245B2 (ja) * 2001-10-03 2007-12-05 信越半導体株式会社 発光素子及びその製造方法
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof

Also Published As

Publication number Publication date
EP1517379A2 (en) 2005-03-23
KR20050029103A (ko) 2005-03-24
CN1599086A (zh) 2005-03-23
CN100342557C (zh) 2007-10-10
TWI232599B (en) 2005-05-11
US20050062054A1 (en) 2005-03-24
TW200512955A (en) 2005-04-01
EP1517379A3 (en) 2011-07-06

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Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application