KR950010253A - 반도체발광장치 - Google Patents

반도체발광장치

Info

Publication number
KR950010253A
KR950010253A KR1019940021783A KR19940021783A KR950010253A KR 950010253 A KR950010253 A KR 950010253A KR 1019940021783 A KR1019940021783 A KR 1019940021783A KR 19940021783 A KR19940021783 A KR 19940021783A KR 950010253 A KR950010253 A KR 950010253A
Authority
KR
South Korea
Prior art keywords
lattice constant
light emitting
substrate
emitting device
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019940021783A
Other languages
English (en)
Inventor
마사시 시라이시
사도시 이또
가즈시 나까노
아끼라 이시바시
마사오 이께다
히로유끼 오꾸야마
가쓰히로 아끼모도
도모노리 히노
마사가즈 우끼다
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9509794A external-priority patent/JP3557644B2/ja
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR950010253A publication Critical patent/KR950010253A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Ⅱ-Ⅵ족 화합물 반도체로부터 레이저 다이오드, 발광다이오드를 구성할 경우에, 보다 저임계치에서의 연속적인 발진을 행할 수 있도록 한다.
기판(1)상에 Ⅱ족 원소로서 Zn, Hg, Cd, Mg 중 최소한 1종류 이상의 원소, 또 Ⅵ족 원소로서, S, Se, Te, 중 최소한 1종류 이상의 원소를 사용한 Ⅱ-Ⅵ족 화합물 반도체로 이루어지는 최소한 제1도전형의 클래드층(2), 활성층(4)및 제2도전형의 클래드층(6)이 성장된 반도체 발광장치에 있어서, 최소한 한쪽의 클래드층(2) 또는 (6)의 격자상수를 기판(1)의 격자상수로부터 벗어난 구성으로 한다.

Description

반도체 발광장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예의 약선적 확대 단면도.

Claims (4)

  1. 기판상에 Ⅱ족 원소로서 Zn, Hg, Cd, Mg 중 최소한 1종류 이상의 원소, 또 Ⅵ족 원소로서, S, Se, Te 중 최소한 1종류 이상의 원소를 사용한 Ⅱ-Ⅵ족 화합물 반도체로 이루어지는 최소한 제1도전형의 클래드층, 활성층 및 제2도전형의 클래드층이 성장된 반도체 발광장치에 있어서, 최소한 한쪽의 클래드층의 격자상수가 상기 기판의 격자상수로부터 벗어난 구성으로 되는 것을 특징으로 하는 반도체 발광장치.
  2. 제1항에 있어서, 상기 기판의 격자상수 a에 대한 상기 클래드층의 격자상수의 편차량 △a의 비가, -8.83×10-3≤(△a/a)≤4.50×10-3으로 되어 이루어지는 것을 특징으로 하는 반도체 발광장치.
  3. 제1항에 있어서, 상기 기판의 격자상수 a에 대한 상기 클래드층의 격자상수의 편차량 △a의 비 △a/a가, -8.83×10-3≤(△a/a)＜0으로 되어 이루어지는 것을 특징으로 하는 반도체 발광장치.
  4. 제1항에 내지 제3항중 어느 한 항에 있어서, 상기 활성층에 대해 기판과는 반대측의 클래드층의 격자상수가 기판측의 클래드층의 격자상수에 비해 작게 되는 것을 특징으로 하는 반도체 발광장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940021783A 1993-09-07 1994-08-31 반도체발광장치 Ceased KR950010253A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP93-222,566 1993-09-07
JP22256693 1993-09-07
JP94-15,523 1994-02-09
JP1552394 1994-02-09
JP94-95,097 1994-05-09
JP9509794A JP3557644B2 (ja) 1993-05-20 1994-05-09 半導体発光装置

Publications (1)

Publication Number Publication Date
KR950010253A true KR950010253A (ko) 1995-04-26

Family

ID=27456398

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940021783A Ceased KR950010253A (ko) 1993-09-07 1994-08-31 반도체발광장치

Country Status (2)

Country Link
US (2) US5633514A (ko)
KR (1) KR950010253A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102573756B1 (ko) * 2022-09-30 2023-09-06 주식회사 디에스티 실린더 헤드용 드릴 가공 전용장치

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode
JP3303631B2 (ja) * 1995-01-04 2002-07-22 キヤノン株式会社 半導体量子井戸構造
JP3399216B2 (ja) * 1996-03-14 2003-04-21 ソニー株式会社 半導体発光素子
JPH10223929A (ja) * 1996-12-05 1998-08-21 Showa Denko Kk ＡｌＧａＩｎＰ発光素子用基板
GB2379086B (en) * 1997-06-26 2003-04-09 Lockheed Corp Defect reduction for interdiffused mercury cadmium telluride based infrared detector materials
JP4457427B2 (ja) * 1999-03-18 2010-04-28 ソニー株式会社 半導体発光装置とその製造方法
NO20041523L (no) * 2003-09-19 2005-03-21 Sumitomo Electric Industries Lysemitterende halvlederelement
US7629603B2 (en) * 2006-06-09 2009-12-08 Intel Corporation Strain-inducing semiconductor regions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091333A (en) * 1983-09-12 1992-02-25 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4806996A (en) * 1986-04-10 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate
JPH02194564A (ja) * 1989-01-24 1990-08-01 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
US5299217A (en) * 1990-10-11 1994-03-29 Hitachi, Ltd. Semiconductor light-emitting device with cadmium zinc selenide layer
KR100209101B1 (ko) * 1991-02-21 1999-07-15 이데이 노부유끼 반도체레이저
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102573756B1 (ko) * 2022-09-30 2023-09-06 주식회사 디에스티 실린더 헤드용 드릴 가공 전용장치

Also Published As

Publication number Publication date
US5633514A (en) 1997-05-27
US5872023A (en) 1999-02-16

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