NO20051523L - Nanoktystallelektonanordning - Google Patents

Nanoktystallelektonanordning

Info

Publication number
NO20051523L
NO20051523L NO20051523A NO20051523A NO20051523L NO 20051523 L NO20051523 L NO 20051523L NO 20051523 A NO20051523 A NO 20051523A NO 20051523 A NO20051523 A NO 20051523A NO 20051523 L NO20051523 L NO 20051523L
Authority
NO
Norway
Prior art keywords
layer
charge
conductivity
reservoir layer
port
Prior art date
Application number
NO20051523A
Other languages
English (en)
Other versions
NO20051523D0 (no
Inventor
Bohumil Lojek
Original Assignee
Atmel Corp A Delaware Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp A Delaware Corp filed Critical Atmel Corp A Delaware Corp
Publication of NO20051523D0 publication Critical patent/NO20051523D0/no
Publication of NO20051523L publication Critical patent/NO20051523L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

Sammendrag En MOS-transistor (29) som har egenskap som en ladningslagringsanordning som i en ikke-volatil minneanordning eller som en forsterker ved bruk av ladningslagringstrekkene for anordningen som en metode for å modulere ledningsevnen for kanalen mellom kilde og drenelektroder (31, 33). Over et dopet substrat (11) isolerer et portoksidlag (17) et dopet elektrisk isolert ladningsreservoarlag (19) fra substratet. Et-overliggende tunnelbarrierelag (21) isolerer ladningsreservoarlaget fra et nanokrystallag (23) som er i stand til å motta eller avgi elektrisk ladnings til ladningsreservoarlaget under påvirkning av kontrollporten (27) overliggende nanokrystallaget og separert ved et oksidlag (25). Elektrisk ladning på ladningsreservoarlaget påvirker ledningsevnen for kanalen. Anordningen kan blir operert i minnemodus som en EEPROM, eller i en forsterkermodus der endringene i portspenninger blir reflektert som endringer i ledningsevne for kanalen.
NO20051523A 2002-08-22 2005-03-22 Nanoktystallelektonanordning NO20051523L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/227,061 US6690059B1 (en) 2002-08-22 2002-08-22 Nanocrystal electron device
PCT/US2003/021464 WO2004019373A2 (en) 2002-08-22 2003-07-09 Nanocrystal electron device

Publications (2)

Publication Number Publication Date
NO20051523D0 NO20051523D0 (no) 2005-03-22
NO20051523L true NO20051523L (no) 2005-03-22

Family

ID=30770661

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20051523A NO20051523L (no) 2002-08-22 2005-03-22 Nanoktystallelektonanordning

Country Status (10)

Country Link
US (1) US6690059B1 (no)
EP (1) EP1540710A4 (no)
JP (1) JP2005536888A (no)
KR (1) KR20050053626A (no)
CN (1) CN1327512C (no)
AU (1) AU2003253848A1 (no)
CA (1) CA2496032A1 (no)
NO (1) NO20051523L (no)
TW (1) TWI225286B (no)
WO (1) WO2004019373A2 (no)

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KR100973282B1 (ko) * 2003-05-20 2010-07-30 삼성전자주식회사 나노 결정층을 구비하는 소노스 메모리 장치
US6962850B2 (en) * 2003-10-01 2005-11-08 Chartered Semiconductor Manufacturing Ltd. Process to manufacture nonvolatile MOS memory device
US6991984B2 (en) * 2004-01-27 2006-01-31 Freescale Semiconductor, Inc. Method for forming a memory structure using a modified surface topography and structure thereof
KR100601943B1 (ko) * 2004-03-04 2006-07-14 삼성전자주식회사 고르게 분포된 실리콘 나노 도트가 포함된 게이트를구비하는 메모리 소자의 제조 방법
US8828792B2 (en) * 2004-05-25 2014-09-09 The Trustees Of The University Of Pennsylvania Nanostructure assemblies, methods and devices thereof
US7405002B2 (en) * 2004-08-04 2008-07-29 Agency For Science, Technology And Research Coated water-soluble nanoparticles comprising semiconductor core and silica coating
US7301197B2 (en) * 2004-09-21 2007-11-27 Atmel Corporation Non-volatile nanocrystal memory transistors using low voltage impact ionization
US7534489B2 (en) * 2004-09-24 2009-05-19 Agency For Science, Technology And Research Coated composites of magnetic material and quantum dots
US7183180B2 (en) * 2004-10-13 2007-02-27 Atmel Corporation Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
US20060140009A1 (en) * 2004-12-23 2006-06-29 Bohumil Lojek Programming method for nanocrystal memory device
US7101760B1 (en) 2005-03-31 2006-09-05 Atmel Corporation Charge trapping nanocrystal dielectric for non-volatile memory transistor
US20060220094A1 (en) * 2005-03-31 2006-10-05 Bohumil Lojek Non-volatile memory transistor with nanotube floating gate
US20060231889A1 (en) * 2005-04-13 2006-10-19 Tupei Chen Two-terminal solid-state memory device and two-terminal flexible memory device based on nanocrystals or nanoparticles
TWI289336B (en) * 2005-11-07 2007-11-01 Ind Tech Res Inst Nanocrystal memory component, manufacturing method thereof and memory comprising the same
KR100690925B1 (ko) * 2005-12-01 2007-03-09 삼성전자주식회사 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법
US7482651B2 (en) * 2005-12-09 2009-01-27 Micron Technology, Inc. Enhanced multi-bit non-volatile memory device with resonant tunnel barrier
KR100837413B1 (ko) * 2006-02-28 2008-06-12 삼성전자주식회사 나노결정을 포함하는 메모리 소자 제조 방법 및 이에 의해제조된 메모리 소자
KR100735534B1 (ko) * 2006-04-04 2007-07-04 삼성전자주식회사 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법
KR100884240B1 (ko) * 2006-10-20 2009-02-17 삼성전자주식회사 반도체 소자 및 그 형성 방법
US7557008B2 (en) * 2007-01-23 2009-07-07 Freescale Semiconductor, Inc. Method of making a non-volatile memory device
GB0801494D0 (en) 2007-02-23 2008-03-05 Univ Ind & Acad Collaboration Nonvolatile memory electronic device using nanowire used as charge channel and nanoparticles used as charge trap and method for manufacturing the same
KR100850905B1 (ko) * 2007-02-23 2008-08-07 고려대학교 산학협력단 나노선­나노입자 이종결합의 비휘발성 메모리 전자소자 및그 제조방법
JP2009130120A (ja) * 2007-11-22 2009-06-11 Toshiba Corp 半導体装置
KR101155108B1 (ko) * 2009-04-30 2012-06-11 국민대학교산학협력단 전하저장층 및 그의 형성 방법, 이를 이용한 비휘발성 메모리 장치 및 그의 제조 방법
JP5537130B2 (ja) * 2009-11-25 2014-07-02 株式会社東芝 半導体記憶装置
US8536039B2 (en) * 2010-03-25 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-crystal gate structure for non-volatile memory
CN102543696B (zh) * 2010-12-17 2014-12-17 中国科学院微电子研究所 一种半导体器件的制造方法
DE102013211360A1 (de) 2013-06-18 2014-12-18 Robert Bosch Gmbh Halbleiter-Leistungsschalter und Verfahren zur Herstellung eines Halbleiter-Leistungsschalters
CN112735272B (zh) * 2020-12-30 2022-05-17 武汉华星光电技术有限公司 显示面板及显示装置

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Also Published As

Publication number Publication date
NO20051523D0 (no) 2005-03-22
EP1540710A4 (en) 2008-11-05
CN1327512C (zh) 2007-07-18
CN1692494A (zh) 2005-11-02
JP2005536888A (ja) 2005-12-02
US6690059B1 (en) 2004-02-10
AU2003253848A8 (en) 2004-03-11
WO2004019373A2 (en) 2004-03-04
EP1540710A2 (en) 2005-06-15
TWI225286B (en) 2004-12-11
TW200405525A (en) 2004-04-01
KR20050053626A (ko) 2005-06-08
WO2004019373B1 (en) 2004-07-01
WO2004019373A3 (en) 2004-05-27
CA2496032A1 (en) 2004-03-04
AU2003253848A1 (en) 2004-03-11

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