NO20051668L - Fremgangsmate for a berge slettede bit i en minneanordning - Google Patents

Fremgangsmate for a berge slettede bit i en minneanordning

Info

Publication number
NO20051668L
NO20051668L NO20051668A NO20051668A NO20051668L NO 20051668 L NO20051668 L NO 20051668L NO 20051668 A NO20051668 A NO 20051668A NO 20051668 A NO20051668 A NO 20051668A NO 20051668 L NO20051668 L NO 20051668L
Authority
NO
Norway
Prior art keywords
current
cells
memory device
reference stream
state
Prior art date
Application number
NO20051668A
Other languages
English (en)
Norwegian (no)
Inventor
Danut I Manea
Original Assignee
Atmel Corp A Delaware Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp A Delaware Corp filed Critical Atmel Corp A Delaware Corp
Publication of NO20051668L publication Critical patent/NO20051668L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
NO20051668A 2002-09-04 2005-04-04 Fremgangsmate for a berge slettede bit i en minneanordning NO20051668L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/235,265 US6724662B2 (en) 2002-09-04 2002-09-04 Method of recovering overerased bits in a memory device
PCT/US2003/023881 WO2004023239A2 (fr) 2002-09-04 2003-07-30 Procede de recuperation de bits ecrases dans une memoire

Publications (1)

Publication Number Publication Date
NO20051668L true NO20051668L (no) 2005-06-06

Family

ID=31977540

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20051668A NO20051668L (no) 2002-09-04 2005-04-04 Fremgangsmate for a berge slettede bit i en minneanordning

Country Status (11)

Country Link
US (1) US6724662B2 (fr)
EP (1) EP1543526B1 (fr)
JP (1) JP2005538484A (fr)
KR (1) KR20050032124A (fr)
CN (1) CN100435242C (fr)
AU (1) AU2003257048A1 (fr)
CA (1) CA2497528A1 (fr)
DE (1) DE60323999D1 (fr)
NO (1) NO20051668L (fr)
TW (1) TWI229348B (fr)
WO (1) WO2004023239A2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004171625A (ja) * 2002-11-18 2004-06-17 Renesas Technology Corp 不揮発性記憶装置
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7307878B1 (en) * 2005-08-29 2007-12-11 Spansion Llc Flash memory device having improved program rate
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7957204B1 (en) 2005-09-20 2011-06-07 Spansion Llc Flash memory programming power reduction
US7433228B2 (en) * 2005-09-20 2008-10-07 Spansion Llc Multi-bit flash memory device having improved program rate
US7362610B1 (en) 2005-12-27 2008-04-22 Actel Corporation Programming method for non-volatile memory and non-volatile memory-based programmable logic device
US7342830B1 (en) 2006-01-17 2008-03-11 Spansion Llc Program and program verify operations for flash memory
US7403425B2 (en) * 2006-03-07 2008-07-22 Micron Technology, Inc. Programming a flash memory device
KR100744013B1 (ko) 2006-07-31 2007-07-30 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
CN101630532B (zh) * 2008-07-17 2012-07-11 上海华虹Nec电子有限公司 用于电可擦除可编程只读存储器的灵敏放大器及实现方法
US8027187B2 (en) * 2008-09-12 2011-09-27 Micron Technology, Inc. Memory sensing devices, methods, and systems
US8289773B2 (en) * 2010-11-09 2012-10-16 Freescale Semiconductor, Inc. Non-volatile memory (NVM) erase operation with brownout recovery technique
US9280168B2 (en) * 2013-03-29 2016-03-08 Intel Corporation Low-power, high-accuracy current reference for highly distributed current references for cross point memory
KR101832384B1 (ko) 2015-09-14 2018-02-26 김형석 떠 먹는 두부의 제조방법
KR101698834B1 (ko) 2016-08-24 2017-01-23 화이버트론 주식회사 침입 감지 장치용 절곡 기구 및 이를 포함하는 침입 감지 장치
CN109308388B (zh) * 2018-09-12 2022-11-08 成都师范学院 电流分数阶积分控制式忆感器
CN117316245A (zh) * 2022-06-22 2023-12-29 世界先进积体电路股份有限公司 非挥发性存储器装置及其控制方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5293560A (en) 1988-06-08 1994-03-08 Eliyahou Harari Multi-state flash EEPROM system using incremental programing and erasing methods
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5272669A (en) 1991-02-20 1993-12-21 Sundisk Corporation Method and structure for programming floating gate memory cells
US5237535A (en) * 1991-10-09 1993-08-17 Intel Corporation Method of repairing overerased cells in a flash memory
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5335198A (en) * 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5359558A (en) * 1993-08-23 1994-10-25 Advanced Micro Devices, Inc. Flash eeprom array with improved high endurance
CN1097268C (zh) 1994-06-02 2002-12-25 英特尔公司 动态每单元一位到多位转换的存贮器
JP2692635B2 (ja) * 1995-03-17 1997-12-17 日本電気株式会社 不揮発性半導体記憶装置及びそのデータ消去方法
JPH08263992A (ja) * 1995-03-24 1996-10-11 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
US5642311A (en) * 1995-10-24 1997-06-24 Advanced Micro Devices Overerase correction for flash memory which limits overerase and prevents erase verify errors
US5901090A (en) * 1998-05-27 1999-05-04 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US6011721A (en) * 1998-08-12 2000-01-04 Advanced Micro Devices Method for sensing state of erasure of a flash electrically erasable programmable read-only memory (EEPROM)
US6205059B1 (en) * 1998-10-05 2001-03-20 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US6275415B1 (en) 1999-10-12 2001-08-14 Advanced Micro Devices, Inc. Multiple byte channel hot electron programming using ramped gate and source bias voltage
JP3569185B2 (ja) * 1999-12-24 2004-09-22 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置
US6327183B1 (en) 2000-01-10 2001-12-04 Advanced Micro Devices, Inc. Nonlinear stepped programming voltage

Also Published As

Publication number Publication date
EP1543526A2 (fr) 2005-06-22
KR20050032124A (ko) 2005-04-06
CN1692448A (zh) 2005-11-02
AU2003257048A8 (en) 2004-03-29
TWI229348B (en) 2005-03-11
TW200406783A (en) 2004-05-01
US6724662B2 (en) 2004-04-20
AU2003257048A1 (en) 2004-03-29
WO2004023239A2 (fr) 2004-03-18
EP1543526B1 (fr) 2008-10-08
JP2005538484A (ja) 2005-12-15
WO2004023239A3 (fr) 2004-05-06
CN100435242C (zh) 2008-11-19
CA2497528A1 (fr) 2004-03-18
EP1543526A4 (fr) 2006-01-11
DE60323999D1 (de) 2008-11-20
US20040052143A1 (en) 2004-03-18

Similar Documents

Publication Publication Date Title
NO20051668L (no) Fremgangsmate for a berge slettede bit i en minneanordning
EP0725555A3 (fr) Méthode et appareil pour la manipulation d'une cellule ATM
GB2401460A (en) Partial page programming of multi level flash semiconductor memory
TW200609944A (en) Method and apparatus for operating a string of charge trapping memory cell
WO2003001530A3 (fr) Procede d'effacement pour memoire flash a masse virtuelle a bits doubles
WO2005086576A3 (fr) Codage d'etats dans des cellules flash multibit
NO20052147L (no) Fremgangsmate og apparat for a tilrettelegge vat eller torr styreledningsforbindelse for bronnmiljo.
WO2001065567A3 (fr) Effacement selectif d'une cellule de memoire non volatile de dispositif a memoire flash
EP0725554A3 (fr) Méthode et appareil par la commutation, transmission multidestinataire, multiplexage et démultiplexage d'une cellule ATM
EP1592024A3 (fr) Procédé d'effacement avec équilibrage de charge pour mémoire non volatile a piégeage de charges
WO2002071410A3 (fr) Tension de programme superieure et taux de programmation plus rapide fondes sur de meilleurs procedes d'effacement
WO2003100786A3 (fr) Lecture serie de la sortie de matrices de cellules multiniveaux
WO2001065566A3 (fr) Effacement selectif d'une cellule de memoire non selective d'un dispositif de memoire flash
IT1255932B (it) Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
DE60133259D1 (de) Schnelles Programmier- und Programmierverifikationsverfahren
EP2408135A3 (fr) Appareil de contrôle d'erreur
EP1039388A3 (fr) Circuit de mémoire semiconductrice à blocs effaçables avec une fonction de remplacement des blocs de mémoire défectueux
NO20065705L (no) Fremgangsmate for a bestemme lagringskapasiteter for syregass i et geologisk medium ved hjelp av en flerfase reaktiv transportmodell
TW200620314A (en) Isolation control circuit and method for a memory device
TW200710856A (en) Memory device, memory array segment, and method of programming a memory cell
WO2004010314A3 (fr) Procede, systeme et programme de commande de multiples dispositifs de stockage
TW200606951A (en) Nonvolatile semiconductor storing device and block redundancy saving method
TW200746146A (en) NAND type multi-bit charge storage memory array and methods for operating and fabricating the same
DE60323828D1 (de) Signalaggregation
EP1130868A3 (fr) Coprocesseur pour utilisation dans des modems à tons multiples discrets