NO20063797L - Halvlederstruktur - Google Patents

Halvlederstruktur

Info

Publication number
NO20063797L
NO20063797L NO20063797A NO20063797A NO20063797L NO 20063797 L NO20063797 L NO 20063797L NO 20063797 A NO20063797 A NO 20063797A NO 20063797 A NO20063797 A NO 20063797A NO 20063797 L NO20063797 L NO 20063797L
Authority
NO
Norway
Prior art keywords
region
doping type
semiconductor substrate
blowout
outlet
Prior art date
Application number
NO20063797A
Other languages
English (en)
Other versions
NO333550B1 (no
Inventor
Gerhard Lutz
Rainer Richter
Peter Lechner
Lothar Struder
Original Assignee
Max Planck Gesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft filed Critical Max Planck Gesellschaft
Publication of NO20063797L publication Critical patent/NO20063797L/no
Publication of NO333550B1 publication Critical patent/NO333550B1/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Non-Volatile Memory (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)

Abstract

Oppfinnelsen gjelder en halvlederstruktur spesielt for bruk i en halvlederdetektor. Nevnte halvlederstruktur innbefatter et svakt dopet halvledersubsfrat (HK) av en første eller andre dopingstype, en høyt dopet utløpsregion (D) av en andre dopingstype, lokalisert på en første overflate av halvledersubsfratet (HK), en høyt dopet kilderegion (S) av den andre dopingstype, lokalisert på den første overflate av halvledersubsfratet (HK), en kanal (K) som sfrekker seg mellom kilderegionen (S) og utløpsregionen (D), en dopet indre portregion (IG) av den første dopingstype, som er i det minste delvis lokalisert under kanalen (K), og en utblåsningskontakt (CL) for å fjerne ladningsbærere fra den indre portregion (IG). I henhold til oppfinnelsen, sfrekker den indre portregion seg i halvledersubsfratet (HK) i det minste delvis opp til utblåsningskontakten (CL) og utblåsningskontakten (CL) er lokalisert på utløpet og relativt til kilderegionen (S).
NO20063797A 2004-01-28 2006-08-25 Halvlederstruktur NO333550B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004004283A DE102004004283A1 (de) 2004-01-28 2004-01-28 Halbleiterstruktur
PCT/EP2005/000402 WO2005074012A2 (de) 2004-01-28 2005-01-17 Halbleiterstruktur

Publications (2)

Publication Number Publication Date
NO20063797L true NO20063797L (no) 2006-08-25
NO333550B1 NO333550B1 (no) 2013-07-08

Family

ID=34801139

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20063797A NO333550B1 (no) 2004-01-28 2006-08-25 Halvlederstruktur

Country Status (6)

Country Link
US (1) US7586136B2 (no)
EP (1) EP1709691B8 (no)
AT (1) ATE402489T1 (no)
DE (2) DE102004004283A1 (no)
NO (1) NO333550B1 (no)
WO (1) WO2005074012A2 (no)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007077292A1 (en) 2006-01-05 2007-07-12 Artto Aurola Visible light detecting semiconductor radiation detector
WO2007077286A1 (en) * 2006-01-05 2007-07-12 Artto Aurola Semiconductor radiation detector detecting visible light
EP1873834B1 (de) 2006-06-29 2008-12-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Löschbarriere, insbesondere für einem Halbleiterdetektor, und zugehöriges Betriebsverfahren
DE102007017640B3 (de) * 2007-04-13 2008-09-04 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterdetektor und zugehöriges Betriebsverfahren
US7727821B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture
DE102007048890B3 (de) * 2007-10-11 2009-03-19 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. DEPFET-Transistor mit großem Dynamikbereich und Halbleiterdetektor
DE102009023807A1 (de) * 2009-06-03 2010-12-09 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur, insbesondere BIB-Detektor mit einem DEPFET als Ausleseelement, sowie entsprechendes Betriebsverfahren
DE102010027128A1 (de) 2010-07-14 2012-01-19 Pnsensor Gmbh Halbleiterbauelement, insbesondere Strahlungsdetektor, mit einem integrierten Überspannungsschutz
DE102011115656B4 (de) 2011-09-28 2014-10-16 Pnsensor Gmbh Halbleiterdetektor mit einem Zwischenspeicher für Signalladungsträger und entsprechendes Betriebsverfahren
DE102019206494A1 (de) * 2019-05-06 2020-11-12 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. DEPFET-Transistor und Verfahren zur Herstellung eines DEPFET- Transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4331391A1 (de) 1993-09-15 1995-03-16 Josef Dr Kemmer Halbleiter(detektor)struktur

Also Published As

Publication number Publication date
WO2005074012A3 (de) 2005-09-29
WO2005074012A2 (de) 2005-08-11
US7586136B2 (en) 2009-09-08
EP1709691B1 (de) 2008-07-23
EP1709691B8 (de) 2008-10-15
ATE402489T1 (de) 2008-08-15
EP1709691A2 (de) 2006-10-11
DE502005004799D1 (de) 2008-09-04
NO333550B1 (no) 2013-07-08
DE102004004283A1 (de) 2005-08-25
US20080230811A1 (en) 2008-09-25

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