SE0700896L - Halvledarkomponent i kiselkarbid - Google Patents

Halvledarkomponent i kiselkarbid

Info

Publication number
SE0700896L
SE0700896L SE0700896A SE0700896A SE0700896L SE 0700896 L SE0700896 L SE 0700896L SE 0700896 A SE0700896 A SE 0700896A SE 0700896 A SE0700896 A SE 0700896A SE 0700896 L SE0700896 L SE 0700896L
Authority
SE
Sweden
Prior art keywords
silicon carbide
semiconductor component
additional layer
highly doped
present
Prior art date
Application number
SE0700896A
Other languages
English (en)
Other versions
SE532625C2 (sv
Inventor
Martin Domeij
Original Assignee
Transic Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transic Ab filed Critical Transic Ab
Priority to SE0700896A priority Critical patent/SE532625C2/sv
Priority to PCT/SE2008/050408 priority patent/WO2008127186A1/en
Priority to EP08741898A priority patent/EP2135284A4/en
Priority to US12/450,708 priority patent/US8829533B2/en
Publication of SE0700896L publication Critical patent/SE0700896L/sv
Publication of SE532625C2 publication Critical patent/SE532625C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H01L29/0611—
    • H01L29/732—
    • H01L29/7371—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE0700896A 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid SE532625C2 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE0700896A SE532625C2 (sv) 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid
PCT/SE2008/050408 WO2008127186A1 (en) 2007-04-11 2008-04-10 Silicon carbide semiconductor device
EP08741898A EP2135284A4 (en) 2007-04-11 2008-04-10 SEMICONDUCTOR ELEMENT FROM SILICON CARBIDE
US12/450,708 US8829533B2 (en) 2007-04-11 2008-04-10 Silicon carbide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0700896A SE532625C2 (sv) 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid

Publications (2)

Publication Number Publication Date
SE0700896L true SE0700896L (sv) 2008-10-12
SE532625C2 SE532625C2 (sv) 2010-03-09

Family

ID=39864176

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0700896A SE532625C2 (sv) 2007-04-11 2007-04-11 Halvledarkomponent i kiselkarbid

Country Status (4)

Country Link
US (1) US8829533B2 (sv)
EP (1) EP2135284A4 (sv)
SE (1) SE532625C2 (sv)
WO (1) WO2008127186A1 (sv)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE537101C2 (sv) * 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
SE535157C2 (sv) * 2010-07-14 2012-05-02 Fairchild Semiconductor Konduktivitetsmodulering i en bipolär transistor i kiselkarbid
IT1401754B1 (it) * 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
SE1051137A1 (sv) * 2010-10-29 2012-04-30 Fairchild Semiconductor Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav
US20160277017A1 (en) * 2011-09-13 2016-09-22 Fsp Technology Inc. Snubber circuit
WO2013107508A1 (en) * 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
JP5924328B2 (ja) * 2013-10-31 2016-05-25 トヨタ自動車株式会社 ツェナーダイオード
US10541300B2 (en) 2016-05-26 2020-01-21 General Electric Company Semiconductor device and method of making thereof
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) * 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness
WO2022020147A2 (en) * 2020-07-24 2022-01-27 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US12701739B2 (en) 2023-09-19 2026-08-04 Ge Aviation Systems Llc Radiation hardened semiconductor power device

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US3964089A (en) * 1972-09-21 1976-06-15 Bell Telephone Laboratories, Incorporated Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone
FR2543736B1 (fr) 1983-03-31 1986-05-02 Thomson Csf Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture
US4945394A (en) 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
JPH0828423B2 (ja) * 1988-10-14 1996-03-21 日本電気株式会社 半導体記憶装置
JPH03203265A (ja) * 1989-12-28 1991-09-04 Sony Corp 半導体装置
US5637910A (en) 1994-02-02 1997-06-10 Rohm Co., Ltd. Multi-emitter or a multi-base transistor
US6348712B1 (en) * 1999-10-27 2002-02-19 Siliconix Incorporated High density trench-gated power MOSFET
JP2001177060A (ja) * 1999-12-14 2001-06-29 Nec Corp モノリシック集積回路装置及びその製造方法
US6455362B1 (en) * 2000-08-22 2002-09-24 Micron Technology, Inc. Double LDD devices for improved dram refresh
DE10126627A1 (de) * 2001-05-31 2002-12-12 Infineon Technologies Ag Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben
US6849874B2 (en) 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
US6982440B2 (en) 2002-02-19 2006-01-03 Powersicel, Inc. Silicon carbide semiconductor devices with a regrown contact layer
US6815304B2 (en) 2002-02-22 2004-11-09 Semisouth Laboratories, Llc Silicon carbide bipolar junction transistor with overgrown base region
DE10223951B4 (de) 2002-05-29 2009-09-24 Infineon Technologies Ag Hochvoltdiode mit optimiertem Abschaltverfahren und entsprechendes Optimierverfahren
JP3940699B2 (ja) * 2003-05-16 2007-07-04 株式会社東芝 電力用半導体素子
JP2005167035A (ja) * 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
CN100565908C (zh) * 2004-07-08 2009-12-02 半南实验室公司 由碳化硅制造的单片垂直结场效应晶体管和肖特基势垒二极管及其制造方法
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JP4768259B2 (ja) * 2004-12-21 2011-09-07 株式会社東芝 電力用半導体装置
JP4802542B2 (ja) * 2005-04-19 2011-10-26 株式会社デンソー 炭化珪素半導体装置
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
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US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
DE102005046707B3 (de) 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
JP5002148B2 (ja) * 2005-11-24 2012-08-15 株式会社東芝 半導体装置
JP5147244B2 (ja) 2007-01-17 2013-02-20 関西電力株式会社 バイポーラ型半導体素子

Also Published As

Publication number Publication date
EP2135284A4 (en) 2012-04-25
US8829533B2 (en) 2014-09-09
EP2135284A1 (en) 2009-12-23
US20100117097A1 (en) 2010-05-13
SE532625C2 (sv) 2010-03-09
WO2008127186A1 (en) 2008-10-23

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