NO20071765L - Prosess for fremstilling av silisium tetraklorid ved reaksjon mellom silisium metall og klor med intern kjoling - Google Patents
Prosess for fremstilling av silisium tetraklorid ved reaksjon mellom silisium metall og klor med intern kjolingInfo
- Publication number
- NO20071765L NO20071765L NO20071765A NO20071765A NO20071765L NO 20071765 L NO20071765 L NO 20071765L NO 20071765 A NO20071765 A NO 20071765A NO 20071765 A NO20071765 A NO 20071765A NO 20071765 L NO20071765 L NO 20071765L
- Authority
- NO
- Norway
- Prior art keywords
- chlorine
- reaction
- silicon
- preparation
- internal cooling
- Prior art date
Links
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title abstract 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052801 chlorine Inorganic materials 0.000 title abstract 3
- 239000000460 chlorine Substances 0.000 title abstract 3
- 239000005049 silicon tetrachloride Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000001816 cooling Methods 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
- 239000003507 refrigerant Substances 0.000 abstract 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 1
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10715—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material
- C01B33/10721—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material with the preferential formation of tetrachloride
- C01B33/10726—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material with the preferential formation of tetrachloride from silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Prosess for å produsere silisiumtetraklorid, SiCl4, ved reaksjon mellom silisium metall, Si, og klor, Cl2, i en reaktor. Temperaturen og reaksjonshastigheten kontrolleres ved samtidig direkte innsprøyting av klor og et kjølemedium i reaksjonssonen til en reaktor. Kjølemediet kan fortrinnsvis være silisiumtetraklorid eller en inert gass.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20071765A NO20071765L (no) | 2007-04-02 | 2007-04-02 | Prosess for fremstilling av silisium tetraklorid ved reaksjon mellom silisium metall og klor med intern kjoling |
| PCT/NO2008/000107 WO2008120996A1 (en) | 2007-04-02 | 2008-03-17 | Process for production of silicon tetrachloride by reaction of silicon metal and chlorine with internal cooling |
| TW97109568A TW200902443A (en) | 2007-04-02 | 2008-03-19 | Process for production of silicon tetrachloride by reaction of silicon metal and chlorine with internal cooling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20071765A NO20071765L (no) | 2007-04-02 | 2007-04-02 | Prosess for fremstilling av silisium tetraklorid ved reaksjon mellom silisium metall og klor med intern kjoling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20071765L true NO20071765L (no) | 2008-10-03 |
Family
ID=39808494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20071765A NO20071765L (no) | 2007-04-02 | 2007-04-02 | Prosess for fremstilling av silisium tetraklorid ved reaksjon mellom silisium metall og klor med intern kjoling |
Country Status (3)
| Country | Link |
|---|---|
| NO (1) | NO20071765L (no) |
| TW (1) | TW200902443A (no) |
| WO (1) | WO2008120996A1 (no) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103101913B (zh) * | 2013-01-31 | 2014-09-03 | 内蒙古盾安光伏科技有限公司 | 四氯化硅冷氢化生产三氯氢硅的系统及方法 |
| CN109467091A (zh) * | 2018-12-25 | 2019-03-15 | 天津中科拓新科技有限公司 | 一种四氯化硅合成的节能装置及方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR8905023A (pt) * | 1989-09-29 | 1991-04-02 | Fundacao Centro Tecnologico De | Processo e equipamento para sintese e purificacao de tetracloreto de silicio para fabricacao de fibras opticas |
| JP2002173313A (ja) * | 2000-12-04 | 2002-06-21 | Denki Kagaku Kogyo Kk | 四塩化珪素の製造方法 |
-
2007
- 2007-04-02 NO NO20071765A patent/NO20071765L/no not_active Application Discontinuation
-
2008
- 2008-03-17 WO PCT/NO2008/000107 patent/WO2008120996A1/en not_active Ceased
- 2008-03-19 TW TW97109568A patent/TW200902443A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW200902443A (en) | 2009-01-16 |
| WO2008120996A1 (en) | 2008-10-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |