NO20082052L - Poleringspasta og fremgangsmate for anvendelse av denne - Google Patents

Poleringspasta og fremgangsmate for anvendelse av denne

Info

Publication number
NO20082052L
NO20082052L NO20082052A NO20082052A NO20082052L NO 20082052 L NO20082052 L NO 20082052L NO 20082052 A NO20082052 A NO 20082052A NO 20082052 A NO20082052 A NO 20082052A NO 20082052 L NO20082052 L NO 20082052L
Authority
NO
Norway
Prior art keywords
particles
abrasive particles
abrasive
hard
polishing paste
Prior art date
Application number
NO20082052A
Other languages
English (en)
Norwegian (no)
Inventor
Ronald W Laconto
Andrew G Haerle
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Publication of NO20082052L publication Critical patent/NO20082052L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
NO20082052A 2005-09-30 2008-04-29 Poleringspasta og fremgangsmate for anvendelse av denne NO20082052L (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72227005P 2005-09-30 2005-09-30
US75555405P 2005-12-30 2005-12-30
PCT/US2006/037825 WO2007041199A2 (en) 2005-09-30 2006-09-29 Polishing slurries and methods for utilizing same

Publications (1)

Publication Number Publication Date
NO20082052L true NO20082052L (no) 2008-04-29

Family

ID=37499367

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20082052A NO20082052L (no) 2005-09-30 2008-04-29 Poleringspasta og fremgangsmate for anvendelse av denne

Country Status (11)

Country Link
US (1) US8105135B2 (pt)
EP (1) EP1928966A2 (pt)
JP (1) JP2009509784A (pt)
KR (1) KR101022982B1 (pt)
AU (1) AU2006297240B2 (pt)
BR (1) BRPI0616706A2 (pt)
CA (1) CA2624246A1 (pt)
IL (1) IL190409A0 (pt)
NO (1) NO20082052L (pt)
TW (1) TW200724633A (pt)
WO (1) WO2007041199A2 (pt)

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CA2700408A1 (en) * 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Improved silicon carbide particles, methods of fabrication, and methods using same
WO2009046296A1 (en) 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
US20100062287A1 (en) * 2008-09-10 2010-03-11 Seagate Technology Llc Method of polishing amorphous/crystalline glass to achieve a low rq & wq
US9567492B2 (en) 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
JP6756460B2 (ja) * 2014-12-26 2020-09-16 株式会社フジミインコーポレーテッド 研磨方法及びセラミック製部品の製造方法
JP2017002166A (ja) 2015-06-09 2017-01-05 テイカ株式会社 ガラス及びセラミック研磨用組成物
JP6694745B2 (ja) * 2016-03-31 2020-05-20 株式会社フジミインコーポレーテッド 研磨用組成物
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
WO2019164449A1 (en) * 2018-02-22 2019-08-29 Massachusetts Institute Of Technology Method of reducing semiconductor substrate surface unevenness
US11597854B2 (en) * 2019-07-16 2023-03-07 Cmc Materials, Inc. Method to increase barrier film removal rate in bulk tungsten slurry
JP7547920B2 (ja) * 2020-10-19 2024-09-10 株式会社レゾナック ＳｉＣ基板の研磨方法
CN116619144B (zh) * 2023-05-30 2026-01-06 华侨大学 一种用于光电材料的软硬协同加工方法

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Also Published As

Publication number Publication date
WO2007041199A3 (en) 2007-06-28
US8105135B2 (en) 2012-01-31
CA2624246A1 (en) 2007-04-12
AU2006297240A1 (en) 2007-04-12
US20070087667A1 (en) 2007-04-19
IL190409A0 (en) 2008-11-03
KR101022982B1 (ko) 2011-03-18
JP2009509784A (ja) 2009-03-12
EP1928966A2 (en) 2008-06-11
TW200724633A (en) 2007-07-01
BRPI0616706A2 (pt) 2011-06-28
WO2007041199A2 (en) 2007-04-12
AU2006297240B2 (en) 2009-04-09
KR20080059606A (ko) 2008-06-30

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Legal Events

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FC2A Withdrawal, rejection or dismissal of laid open patent application