NO20082102L - Smeltedigel for krystallisering av silisium og fremgangsmate for fremstilling av digelen - Google Patents
Smeltedigel for krystallisering av silisium og fremgangsmate for fremstilling av digelenInfo
- Publication number
- NO20082102L NO20082102L NO20082102A NO20082102A NO20082102L NO 20082102 L NO20082102 L NO 20082102L NO 20082102 A NO20082102 A NO 20082102A NO 20082102 A NO20082102 A NO 20082102A NO 20082102 L NO20082102 L NO 20082102L
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- crucible
- crystallization
- making
- melting pot
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 238000002425 crystallisation Methods 0.000 title 1
- 230000008025 crystallization Effects 0.000 title 1
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011253 protective coating Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052500 inorganic mineral Inorganic materials 0.000 abstract 1
- 239000011707 mineral Substances 0.000 abstract 1
- 239000012768 molten material Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
- C04B35/6316—Binders based on silicon compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
- C04B35/6264—Mixing media, e.g. organic solvents
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5066—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details specially adapted for crucible or pot furnaces
- F27B14/10—Crucibles
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
- C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Ceramic Products (AREA)
- Glass Compositions (AREA)
- Optical Elements Other Than Lenses (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Oppfinnelsen angår en smeltedigel for krystallisering av silisium og fremstilling og anvendelse av frigjøringsbelegg for smeltedigler benyttet for håndtering av smeltede materialer som bringes til å størkne i smeltedigelen og deretter fjernes som støpeblokker, og mer spesielt frigjøringsbelegg for smeltedigler benyttet for størkning av polykrystallinsk silisium. Oppfinnerens siktemål var å tilveiebringe en smeltedigel omfattende et silisiumnitridbelegg som er hurtigere og billigere å fremstille, og som er sterkere, med en forbedret vedhefting til veggene. Det har nå vist seg at disse problemer kan løses med en smeltedigel for krystallisering av silisium omfattende et a) basislegeme omfattende en bunnflate og sidevegger som avgrenser et indre volum; b) et beskyttende belegg omfattende 80-95 vekt% silisiumnitrid og 5-20 vekt% av et mineralsk lavtemperaturbindemiddel, hvor det totale oksygeninnhold er fra 5 til 15 vekt%.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05447224 | 2005-10-06 | ||
| PCT/EP2006/009671 WO2007039310A1 (en) | 2005-10-06 | 2006-10-06 | Crucible for the crystallization of silicon and process for making the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20082102L true NO20082102L (no) | 2008-05-05 |
Family
ID=35735284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20082102A NO20082102L (no) | 2005-10-06 | 2008-05-05 | Smeltedigel for krystallisering av silisium og fremgangsmate for fremstilling av digelen |
Country Status (18)
| Country | Link |
|---|---|
| US (1) | US8298333B2 (no) |
| EP (1) | EP1954856B1 (no) |
| JP (1) | JP4917607B2 (no) |
| KR (1) | KR101212924B1 (no) |
| CN (1) | CN101278078B (no) |
| AT (1) | ATE439461T1 (no) |
| AU (1) | AU2006298957B2 (no) |
| BR (1) | BRPI0616485A2 (no) |
| CA (1) | CA2624887C (no) |
| DE (1) | DE602006008498D1 (no) |
| ES (1) | ES2327570T3 (no) |
| NO (1) | NO20082102L (no) |
| PL (1) | PL1954856T3 (no) |
| RU (1) | RU2401889C2 (no) |
| TW (1) | TWI400369B (no) |
| UA (1) | UA89284C2 (no) |
| WO (1) | WO2007039310A1 (no) |
| ZA (1) | ZA200803754B (no) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005050593A1 (de) * | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
| EP1811064A1 (fr) | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
| ATE528267T1 (de) * | 2007-04-25 | 2011-10-15 | Esk Ceramics Gmbh & Co Kg | Formkörper mit einer dauerhaften siliciumnitridhaltigen hartbeschichtung, verfahren zu dessen herstellung und dessen verwendung |
| US8236232B2 (en) | 2007-04-30 | 2012-08-07 | General Electric Company | Methods for making reinforced refractory crucibles for melting titanium alloys |
| US8048365B2 (en) * | 2007-04-30 | 2011-11-01 | General Electric Company | Crucibles for melting titanium alloys |
| BE1017674A3 (fr) * | 2007-07-05 | 2009-03-03 | Fib Services Internat | Composition de traitement de chambre a parois refractaires et son procede de mise en oeuvre. |
| DE102007053284A1 (de) | 2007-11-08 | 2009-05-20 | Esk Ceramics Gmbh & Co. Kg | Fest haftende siliciumnitridhaltige Trennschicht |
| DE102008031766A1 (de) | 2008-07-04 | 2009-10-15 | Schott Ag | Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels |
| CN101433890B (zh) * | 2008-12-05 | 2010-12-29 | 江阴海润太阳能电力有限公司 | 低压下在石英坩埚内壁上喷涂氮化硅涂层的方法及装置 |
| RU2384410C1 (ru) * | 2008-12-11 | 2010-03-20 | Открытое акционерное общество Научно-производственное объединение "Искра" | Способ подготовки к работе формообразующей оправки |
| CN101775639B (zh) * | 2009-01-08 | 2012-05-30 | 常熟华融太阳能新型材料有限公司 | 用于多晶硅结晶炉炉壁保护的内衬及其制造方法 |
| CN101508590B (zh) * | 2009-03-20 | 2012-07-04 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅铸锭用坩埚涂层以及制备方法 |
| CN101798236B (zh) * | 2009-04-30 | 2011-12-07 | 山东圣川陶瓷材料有限公司 | 干法水泥回转窑预热器用陶瓷内筒 |
| WO2011009062A2 (en) * | 2009-07-16 | 2011-01-20 | Memc Singapore Pte, Ltd. | Coated crucibles and methods for preparing and use thereof |
| JP5518584B2 (ja) * | 2010-06-16 | 2014-06-11 | 電気化学工業株式会社 | 離型剤用窒化珪素粉末。 |
| CN101870592B (zh) * | 2010-06-30 | 2012-05-30 | 武汉理工大学 | 镀氮化钛碳化硅纤维的制备方法 |
| FR2964117B1 (fr) * | 2010-08-27 | 2012-09-28 | Commissariat Energie Atomique | Creuset pour la solidification de lingot de silicium |
| JP5788891B2 (ja) * | 2010-10-08 | 2015-10-07 | Jx日鉱日石金属株式会社 | シリコンインゴット製造用容器 |
| EP2660201B1 (en) * | 2010-12-28 | 2017-03-22 | Ube Industries, Ltd. | Polycrystalline silicon ingot casting mold and method for producing the same, and slurry used for its method |
| JP5637221B2 (ja) * | 2010-12-28 | 2014-12-10 | 宇部興産株式会社 | 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー |
| US8664135B2 (en) * | 2010-12-30 | 2014-03-04 | Saint-Gobain Ceramics & Plastics, Inc. | Crucible body and method of forming same |
| MY165455A (en) * | 2011-08-31 | 2018-03-22 | 3M Innovative Properties Co | Silicon-nitride-containing separating layer having high hardness |
| WO2013066495A1 (en) * | 2011-09-09 | 2013-05-10 | Innovent Technologies | Coated crucible and method of making a coated crucible |
| US8747538B2 (en) * | 2011-09-20 | 2014-06-10 | Chung-Hou Tony Hsiao | Photovoltaic ingot mold release |
| CN102358953B (zh) * | 2011-09-28 | 2015-12-09 | 江西赛维Ldk太阳能高科技有限公司 | 一种减少粘埚的坩埚及其制备方法 |
| US8858697B2 (en) | 2011-10-28 | 2014-10-14 | General Electric Company | Mold compositions |
| CN103130528B (zh) * | 2011-12-05 | 2014-06-11 | 江苏协鑫硅材料科技发展有限公司 | 多晶硅铸锭用的免烧结坩埚涂层结构及其制备方法 |
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| US4218418A (en) * | 1978-06-22 | 1980-08-19 | Crystal Systems, Inc. | Processes of casting an ingot and making a silica container |
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| EP1739209A1 (en) | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
| EP1811064A1 (fr) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
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2006
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- 2006-10-06 US US12/089,147 patent/US8298333B2/en not_active Expired - Fee Related
- 2006-10-06 DE DE602006008498T patent/DE602006008498D1/de active Active
- 2006-10-06 RU RU2008117093/05A patent/RU2401889C2/ru not_active IP Right Cessation
- 2006-10-06 CN CN2006800369429A patent/CN101278078B/zh not_active Expired - Fee Related
- 2006-10-06 PL PL06806079T patent/PL1954856T3/pl unknown
- 2006-10-06 UA UAA200805915A patent/UA89284C2/ru unknown
- 2006-10-06 EP EP06806079A patent/EP1954856B1/en not_active Not-in-force
- 2006-10-06 ES ES06806079T patent/ES2327570T3/es active Active
- 2006-10-06 ZA ZA200803754A patent/ZA200803754B/xx unknown
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- 2006-10-06 AU AU2006298957A patent/AU2006298957B2/en not_active Ceased
- 2006-10-06 AT AT06806079T patent/ATE439461T1/de active
- 2006-10-06 WO PCT/EP2006/009671 patent/WO2007039310A1/en not_active Ceased
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Also Published As
| Publication number | Publication date |
|---|---|
| JP4917607B2 (ja) | 2012-04-18 |
| US8298333B2 (en) | 2012-10-30 |
| ZA200803754B (en) | 2009-09-30 |
| TW200720496A (en) | 2007-06-01 |
| TWI400369B (zh) | 2013-07-01 |
| CA2624887C (en) | 2013-07-09 |
| CA2624887A1 (en) | 2007-04-12 |
| KR20080051144A (ko) | 2008-06-10 |
| ES2327570T3 (es) | 2009-10-30 |
| AU2006298957B2 (en) | 2010-06-03 |
| PL1954856T3 (pl) | 2010-01-29 |
| AU2006298957A1 (en) | 2007-04-12 |
| KR101212924B1 (ko) | 2012-12-14 |
| UA89284C2 (ru) | 2010-01-11 |
| RU2008117093A (ru) | 2009-11-20 |
| US20080260608A1 (en) | 2008-10-23 |
| CN101278078A (zh) | 2008-10-01 |
| EP1954856B1 (en) | 2009-08-12 |
| BRPI0616485A2 (pt) | 2012-12-25 |
| EP1954856A1 (en) | 2008-08-13 |
| JP2009510387A (ja) | 2009-03-12 |
| DE602006008498D1 (de) | 2009-09-24 |
| RU2401889C2 (ru) | 2010-10-20 |
| CN101278078B (zh) | 2011-01-19 |
| ATE439461T1 (de) | 2009-08-15 |
| WO2007039310A1 (en) | 2007-04-12 |
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