NO803662L - Felteffekttransistor, fremgangsmaate for dens fremstilling og forsterker med slik transistor - Google Patents

Felteffekttransistor, fremgangsmaate for dens fremstilling og forsterker med slik transistor

Info

Publication number: NO803662L
Authority: NO; Norway
Prior art keywords: substrate; layer; drain; source; grid
Prior art date: 1979-12-04

Application number

NO803662A

Other languages

English (en)

Norwegian (no)

Inventor

Alain Bert

Original Assignee

Thomson Csf

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-12-04

Filing date

1980-12-03

Publication date

1981-06-05

1980-12-03 Application filed by Thomson Csf filed Critical Thomson Csf

1981-06-05 Publication of NO803662L publication Critical patent/NO803662L/no

Links

230000005669 field effect Effects 0.000 title claims description 13
238000000034 method Methods 0.000 title claims description 7
238000004519 manufacturing process Methods 0.000 title claims 2
239000000758 substrate Substances 0.000 claims description 29
239000004065 semiconductor Substances 0.000 claims description 7
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
238000002513 implantation Methods 0.000 claims description 5
239000000463 material Substances 0.000 claims description 5
230000004888 barrier function Effects 0.000 claims description 4
238000000151 deposition Methods 0.000 claims description 4
230000008021 deposition Effects 0.000 claims description 3
229910052710 silicon Inorganic materials 0.000 claims description 3
239000010703 silicon Substances 0.000 claims description 3
230000015572 biosynthetic process Effects 0.000 claims description 2
230000004907 flux Effects 0.000 claims 2
229910052751 metal Inorganic materials 0.000 claims 2
239000002184 metal Substances 0.000 claims 2
230000008030 elimination Effects 0.000 claims 1
238000003379 elimination reaction Methods 0.000 claims 1
239000011810 insulating material Substances 0.000 claims 1
229910052782 aluminium Inorganic materials 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
230000005684 electric field Effects 0.000 description 5
238000013461 design Methods 0.000 description 4
230000003321 amplification Effects 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
238000003486 chemical etching Methods 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
238000003199 nucleic acid amplification method Methods 0.000 description 2
230000008569 process Effects 0.000 description 2
-1 sulfur ions Chemical class 0.000 description 2
241001629511 Litchi Species 0.000 description 1
229910000990 Ni alloy Inorganic materials 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
ZUGYBSSWYZCQSV-UHFFFAOYSA-N indium(3+);phosphite Chemical compound [In+3].[O-]P([O-])[O-] ZUGYBSSWYZCQSV-UHFFFAOYSA-N 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000010561 standard procedure Methods 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
239000011593 sulfur Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/125—Shapes of junctions between the regions

Landscapes

Junction Field-Effect Transistors (AREA)
Bipolar Transistors (AREA)

NO803662A 1979-12-04 1980-12-03 Felteffekttransistor, fremgangsmaate for dens fremstilling og forsterker med slik transistor NO803662L (no)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR7929764A FR2471049A1 (fr)	1979-12-04	1979-12-04	Transistor a effet de champ, procede de fabrication de celui-ci, et amplificateur comprenant un tel transistor

Publications (1)

Publication Number	Publication Date
NO803662L true NO803662L (no)	1981-06-05

Family

ID=9232375

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO803662A NO803662L (no)	1979-12-04	1980-12-03	Felteffekttransistor, fremgangsmaate for dens fremstilling og forsterker med slik transistor

Country Status (4)

Country	Link
EP (1)	EP0030178A3 (de)
JP (1)	JPS5693374A (de)
FR (1)	FR2471049A1 (de)
NO (1)	NO803662L (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100242477B1 (ko) *	1991-07-15	2000-02-01	비센트 비.인그라시아	반도체 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2444489A1 (de) *	1974-09-18	1976-04-01	Heinz Prof Dr Rer Nat Beneking	Halbleiteranordnung und verfahren zu ihrer herstellung
DE2821975C2 (de) *	1978-05-19	1983-01-27	Siemens AG, 1000 Berlin und 8000 München	Metall-Halbleiter-Feldeffekttransistor (MESFET) und Verfahren zu dessen Herstellung

1979
- 1979-12-04 FR FR7929764A patent/FR2471049A1/fr active Granted
1980
- 1980-11-13 EP EP80401623A patent/EP0030178A3/de not_active Ceased
- 1980-12-03 NO NO803662A patent/NO803662L/no unknown
- 1980-12-04 JP JP17145080A patent/JPS5693374A/ja active Pending

Also Published As

Publication number	Publication date
EP0030178A3 (de)	1981-07-01
EP0030178A2 (de)	1981-06-10
JPS5693374A (en)	1981-07-28
FR2471049B1 (de)	1983-11-25
FR2471049A1 (fr)	1981-06-12

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