NO843615L - Infra-roed detektor. - Google Patents
Infra-roed detektor.Info
- Publication number
- NO843615L NO843615L NO843615A NO843615A NO843615L NO 843615 L NO843615 L NO 843615L NO 843615 A NO843615 A NO 843615A NO 843615 A NO843615 A NO 843615A NO 843615 L NO843615 L NO 843615L
- Authority
- NO
- Norway
- Prior art keywords
- layers
- type
- conductivity
- detector
- photodetector
- Prior art date
Links
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 6
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- -1 calcium mercury-silver Chemical compound 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
Landscapes
- Light Receiving Elements (AREA)
- Air Bags (AREA)
- Glass Compositions (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8324513 | 1983-09-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO843615L true NO843615L (no) | 1988-03-01 |
Family
ID=10548718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO843615A NO843615L (no) | 1983-09-13 | 1984-09-12 | Infra-roed detektor. |
Country Status (5)
| Country | Link |
|---|---|
| DK (1) | DK437084A (it) |
| GB (1) | GB2201835B (it) |
| IT (1) | IT8567525A0 (it) |
| NO (1) | NO843615L (it) |
| SE (1) | SE8504829D0 (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267745B (zh) * | 2021-12-29 | 2025-02-21 | 材料科学姑苏实验室 | 电子、空穴传输通道分离的碲化镉探测器及其制备方法 |
-
1984
- 1984-09-12 NO NO843615A patent/NO843615L/no unknown
- 1984-09-13 GB GB8423179A patent/GB2201835B/en not_active Expired
- 1984-09-13 DK DK437084A patent/DK437084A/da not_active Application Discontinuation
-
1985
- 1985-06-06 IT IT8567525A patent/IT8567525A0/it unknown
- 1985-10-16 SE SE8504829A patent/SE8504829D0/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB8423179D0 (en) | 1988-06-29 |
| GB2201835B (en) | 1989-02-22 |
| GB2201835A (en) | 1988-09-07 |
| SE8504829D0 (sv) | 1985-10-16 |
| IT8567525A0 (it) | 1985-06-06 |
| DK437084A (da) | 1985-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0087299B1 (en) | Multilayer avalanche photodetector | |
| US9712105B2 (en) | Lateral photovoltaic device for near field use | |
| US20100159631A1 (en) | Reduced dark current photodetector | |
| JP2007535806A (ja) | 人工アモルファス半導体および太陽電池への適用 | |
| US20050029541A1 (en) | Charge controlled avalanche photodiode and method of making the same | |
| JP2781021B2 (ja) | 磁界センサ | |
| US7045378B2 (en) | Forming a photodiode to include a superlattice exclusion layer | |
| US4786335A (en) | Infra-red detector | |
| EP0304048B1 (en) | A planar type heterostructure avalanche photodiode | |
| JPH038117B2 (it) | ||
| NO843615L (no) | Infra-roed detektor. | |
| US20120056243A1 (en) | Photodetector and method for manufacturing photodetector | |
| US5031012A (en) | Devices having asymmetric delta-doping | |
| CN207282503U (zh) | InAs/GaSbⅡ类超晶格 | |
| US4075043A (en) | Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique | |
| US4860074A (en) | Alternating gradient photodetector | |
| JPS6057233B2 (ja) | ホトダイオ−ド検出器及びその製造方法 | |
| JP2703167B2 (ja) | 受光素子及びその製造方法 | |
| US6331716B1 (en) | Variable capacity device with quantum-wave interference layers | |
| US20210167239A1 (en) | Light-Receiving Element | |
| EP0249624A1 (en) | Photodetectors and methods for making such detectors | |
| RU49361U1 (ru) | Фоточувствительная структура | |
| JPS63278283A (ja) | 光導電型受光素子 | |
| JP3676802B2 (ja) | 周期表第▲２▼−▲６▼族の材料からなる赤外線光検出器のエピタキシャル・パッシベーション | |
| JPH03244164A (ja) | 半導体受光素子 |