NO863931L - Forbedret silisiumnitrid og fremgangsmaate til dets fremstilling. - Google Patents

Forbedret silisiumnitrid og fremgangsmaate til dets fremstilling.

Info

Publication number: NO863931L
Authority: NO; Norway
Prior art keywords: ppm; content; silicon nitride; reaction; less
Prior art date: 1985-10-17

Application number

NO863931A

Other languages

English (en)

Norwegian (no)

Other versions

NO863931D0 (no

Inventor

Benno Laubach

Gerhard Franz

Ulrike Wickel

Lothar Schoenfelder

Original Assignee

Bayer Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-10-17

Filing date

1986-10-02

Publication date

1987-04-21

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6283751&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO863931(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1986-10-02 Application filed by Bayer Ag filed Critical Bayer Ag

1986-10-02 Publication of NO863931D0 publication Critical patent/NO863931D0/no

1987-04-21 Publication of NO863931L publication Critical patent/NO863931L/no

Links

229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
239000010703 silicon Substances 0.000 title claims abstract description 16
238000000034 method Methods 0.000 title claims description 19
238000004519 manufacturing process Methods 0.000 title claims description 10
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 5
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 26
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
-1 silicon halides Chemical class 0.000 claims abstract description 19
239000002245 particle Substances 0.000 claims abstract description 18
229910002804 graphite Inorganic materials 0.000 claims abstract description 16
239000010439 graphite Substances 0.000 claims abstract description 16
229910052799 carbon Inorganic materials 0.000 claims abstract description 15
229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
229910021529 ammonia Inorganic materials 0.000 claims abstract description 12
239000000843 powder Substances 0.000 claims abstract description 11
229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
229910052736 halogen Inorganic materials 0.000 claims abstract description 8
150000002367 halogens Chemical class 0.000 claims abstract description 8
239000012535 impurity Substances 0.000 claims abstract description 8
238000010574 gas phase reaction Methods 0.000 claims abstract description 3
238000006243 chemical reaction Methods 0.000 claims description 24
239000000203 mixture Substances 0.000 claims description 12
239000007789 gas Substances 0.000 claims description 10
239000011261 inert gas Substances 0.000 claims description 7
239000007795 chemical reaction product Substances 0.000 claims description 6
239000000463 material Substances 0.000 claims description 5
238000002156 mixing Methods 0.000 claims description 4
238000007669 thermal treatment Methods 0.000 claims description 3
150000004820 halides Chemical class 0.000 claims description 2
238000010438 heat treatment Methods 0.000 claims description 2
239000012159 carrier gas Substances 0.000 claims 3
229910004298 SiO 2 Inorganic materials 0.000 claims 1
229910000069 nitrogen hydride Inorganic materials 0.000 claims 1
239000000047 product Substances 0.000 description 12
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
239000000919 ceramic Substances 0.000 description 7
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
239000000460 chlorine Substances 0.000 description 6
238000002425 crystallisation Methods 0.000 description 5
230000008025 crystallization Effects 0.000 description 5
235000012239 silicon dioxide Nutrition 0.000 description 5
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
229910052801 chlorine Inorganic materials 0.000 description 4
229910052756 noble gas Inorganic materials 0.000 description 4
150000002835 noble gases Chemical class 0.000 description 4
239000010453 quartz Substances 0.000 description 4
229910052757 nitrogen Inorganic materials 0.000 description 3
238000007493 shaping process Methods 0.000 description 3
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
229910010271 silicon carbide Inorganic materials 0.000 description 3
VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
239000012298 atmosphere Substances 0.000 description 2
229910010293 ceramic material Inorganic materials 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
239000003245 coal Substances 0.000 description 2
239000000356 contaminant Substances 0.000 description 2
238000011109 contamination Methods 0.000 description 2
RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 2
229910000071 diazene Inorganic materials 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
239000011733 molybdenum Substances 0.000 description 2
JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical class C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 2
239000002994 raw material Substances 0.000 description 2
239000005049 silicon tetrachloride Substances 0.000 description 2
238000005245 sintering Methods 0.000 description 2
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
229910007991 Si-N Inorganic materials 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
229910006294 Si—N Inorganic materials 0.000 description 1
229910017878 a-Si3N4 Inorganic materials 0.000 description 1
239000000654 additive Substances 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
239000011230 binding agent Substances 0.000 description 1
229910052791 calcium Inorganic materials 0.000 description 1
239000011575 calcium Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
229910052681 coesite Inorganic materials 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000001816 cooling Methods 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
239000010431 corundum Substances 0.000 description 1
229910052593 corundum Inorganic materials 0.000 description 1
238000005336 cracking Methods 0.000 description 1
229910052906 cristobalite Inorganic materials 0.000 description 1
238000004821 distillation Methods 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
238000010191 image analysis Methods 0.000 description 1
150000003949 imides Chemical class 0.000 description 1
238000001746 injection moulding Methods 0.000 description 1
239000013067 intermediate product Substances 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
238000000465 moulding Methods 0.000 description 1
238000005121 nitriding Methods 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
150000002894 organic compounds Chemical class 0.000 description 1
239000003960 organic solvent Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
239000003973 paint Substances 0.000 description 1
239000011148 porous material Substances 0.000 description 1
238000003825 pressing Methods 0.000 description 1
239000003870 refractory metal Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
230000035939 shock Effects 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
150000004756 silanes Chemical class 0.000 description 1
150000003377 silicon compounds Chemical class 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
239000007779 soft material Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
239000002904 solvent Substances 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
239000012798 spherical particle Substances 0.000 description 1
239000007858 starting material Substances 0.000 description 1
229910052682 stishovite Inorganic materials 0.000 description 1
229920001169 thermoplastic Polymers 0.000 description 1
239000004416 thermosoftening plastic Substances 0.000 description 1
PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1
230000007306 turnover Effects 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0687—After-treatment, e.g. grinding, purification
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/02—Amorphous compounds
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/04—Compounds with a limited amount of crystallinty, e.g. as indicated by a crystallinity index
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Nanotechnology (AREA)
Inorganic Chemistry (AREA)
Composite Materials (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Physics & Mathematics (AREA)
Ceramic Products (AREA)
Silicon Compounds (AREA)

NO863931A 1985-10-17 1986-10-02 Forbedret silisiumnitrid og fremgangsmaate til dets fremstilling. NO863931L (no)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19853536933 DE3536933A1 (de)	1985-10-17	1985-10-17	Verbessertes siliciumnitrid und verfahren zu dessen herstellung

Publications (2)

Publication Number	Publication Date
NO863931D0 NO863931D0 (no)	1986-10-02
NO863931L true NO863931L (no)	1987-04-21

Family

ID=6283751

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO863931A NO863931L (no)	1985-10-17	1986-10-02	Forbedret silisiumnitrid og fremgangsmaate til dets fremstilling.

Country Status (4)

Country	Link
EP (1)	EP0219764B1 (fr)
JP (1)	JPS62182105A (fr)
DE (2)	DE3536933A1 (fr)
NO (1)	NO863931L (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3829503A1 (de) *	1988-08-31	1990-03-01	Bayer Ag	Siliciumnitridpulver mit geringem sauerstoffgehalt
DE4139748A1 (de) *	1991-12-03	1993-06-09	Bayer Ag, 5090 Leverkusen, De	Fluorarme si-haltige keramische pulver und verfahren zu deren herstellung
DE4200787A1 (de) *	1992-01-15	1993-07-22	Bayer Ag	Verfahren zur herstellung von si(pfeil abwaerts)3(pfeil abwaerts)(pfeil hoch)n(pfeil hoch)(pfeil abwaerts)4(pfeil abwaerts), neue ausgangsverbindung hierfuer sowie verfahren zu dessen herstellung
DE4214725C2 (de) *	1992-05-04	1995-04-20	Starck H C Gmbh Co Kg	Feinteilige Nichtoxid-Keramikpulver
GB9306802D0 (en) *	1993-04-01	1993-05-26	Tioxide Specialties Ltd	Process for the production of silicon nitride
DE4337336C1 (de) *	1993-11-02	1994-12-15	Starck H C Gmbh Co Kg	Feinteilige Metall-, Legierungs- und Metallverbindungspulver
EP0963464B1 (fr) *	1997-02-06	2001-07-18	Deutsche Solar GmbH	Creuset muni de couches de protection en silicium, procede d'application la couche de protection en silicium et utilisation
NO344185B1 (en) *	2016-05-31	2019-09-30	Inst Energiteknik	Electrode and Battery comprising a powder of Silicon Nitride particles

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR1368568A (fr) *	1962-09-10	1964-07-31	United Aircraft Corp	Nitrure de silicium pyrolytique et son procédé de préparation
JPS54124898A (en) *	1978-03-22	1979-09-28	Toyo Soda Mfg Co Ltd	Preparation of silicon nitride
JPS54132500A (en) *	1978-04-05	1979-10-15	Toshiba Ceramics Co	Manufacture of silicon nitride powder
JPS6049121B2 (ja) *	1978-04-11	1985-10-31	旭硝子株式会社	窒化珪素の製造方法
JPS57175711A (en) *	1981-04-21	1982-10-28	Asahi Glass Co Ltd	Synthesis of silicon nitride
JPS5855315A (ja) *	1981-09-24	1983-04-01	Toyo Soda Mfg Co Ltd	窒化珪素粉末の製造方法
JPS58199707A (ja) *	1982-05-18	1983-11-21	Ube Ind Ltd	結晶質窒化ケイ素粉末の製法
JPS58213607A (ja) *	1982-06-07	1983-12-12	Shin Etsu Chem Co Ltd	シリコンイミドおよび／または窒化けい素の製造方法
JPS5973412A (ja) *	1982-10-15	1984-04-25	Agency Of Ind Science & Technol	窒化けい素粉体の製造方法

1985
- 1985-10-17 DE DE19853536933 patent/DE3536933A1/de not_active Withdrawn
1986
- 1986-10-02 NO NO863931A patent/NO863931L/no unknown
- 1986-10-08 DE DE8686113935T patent/DE3677696D1/de not_active Expired - Lifetime
- 1986-10-08 EP EP86113935A patent/EP0219764B1/fr not_active Expired - Lifetime
- 1986-10-13 JP JP61241566A patent/JPS62182105A/ja active Pending

Also Published As

Publication number	Publication date
EP0219764B1 (fr)	1991-02-27
NO863931D0 (no)	1986-10-02
EP0219764A2 (fr)	1987-04-29
JPS62182105A (ja)	1987-08-10
EP0219764A3 (en)	1988-02-24
DE3536933A1 (de)	1987-04-23
DE3677696D1 (de)	1991-04-04

Publication	Publication Date	Title
JPH0649514A (ja)	1994-02-22	金属およびセラミツクスの微粉末の製造法
NO174694B (no)	1994-03-14	Apparat og fremgangsmaate for fremstilling av ensartete, fine, borinneholdende, keramiske pulvere
JPH0217481B2 (fr)	1990-04-20
JPS6112844B2 (fr)	1986-04-10
KR20110112334A (ko)	2011-10-12	고순도 질화규소 제조방법
CN1107085A (zh)	1995-08-23	细粒金属，合金和金属化合物粉末
NO863931L (no)	1987-04-21	Forbedret silisiumnitrid og fremgangsmaate til dets fremstilling.
JPS5913442B2 (ja)	1984-03-29	高純度の型窒化珪素の製造法
FR2545077A1 (fr)	1984-11-02	Preparation de poudres de diborures metalliques
CA3006924C (fr)	2020-01-07	Procede de depot d'un revetement in-situ sur des pieces sollicitees thermiquement et chimiquement d'un reacteur a lit fluidise pour l'obtention de polysilicium de haute purete
US20190186045A1 (en)	2019-06-20	Device for growing silicon carbide of specific shape
US11148978B2 (en)	2021-10-19	Method for producing silicon-carbide-based composite
US3773899A (en)	1973-11-20	Manufacture of silicon carbide
JP2721678B2 (ja)	1998-03-04	β−炭化珪素成形体及びその製造法
JPH06127922A (ja)	1994-05-10	多結晶シリコン製造用流動層反応器
US20050255245A1 (en)	2005-11-17	Method and apparatus for the chemical vapor deposition of materials
JPS5930645B2 (ja)	1984-07-28	高純度α型窒化珪素の製造法
JPS58199707A (ja)	1983-11-21	結晶質窒化ケイ素粉末の製法
Ziegenbalg et al.	2004	Vapor Phase Synthesis of Multicomponent Si‐N‐Ti Powders
Kasai et al.	1985	Synthesis of Si3N4 powder by thermal decomposition of Si (NH) 2 and sintering properties
JPS6132244B2 (fr)	1986-07-25
RU2513402C2 (ru)	2014-04-20	Способ получения додекаборида алюминия
JP2007254868A (ja)	2007-10-04	チタン化合物の成膜方法
JPH02217394A (ja)	1990-08-30	結晶質窒化珪素塊状体
JPH03247506A (ja)	1991-11-05	多結晶炭化珪素