NO914401L - Fotodetektor - Google Patents

Fotodetektor

Info

Publication number
NO914401L
NO914401L NO91914401A NO914401A NO914401L NO 914401 L NO914401 L NO 914401L NO 91914401 A NO91914401 A NO 91914401A NO 914401 A NO914401 A NO 914401A NO 914401 L NO914401 L NO 914401L
Authority
NO
Norway
Prior art keywords
semiconductor layer
type semiconductor
layer
photo detector
type
Prior art date
Application number
NO91914401A
Other languages
English (en)
Other versions
NO914401D0 (no
Inventor
Takeshi Himoto
Ichiro Tonai
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of NO914401D0 publication Critical patent/NO914401D0/no
Publication of NO914401L publication Critical patent/NO914401L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Light Receiving Elements (AREA)

Abstract

En fotodetektor omfatter f.eks. et halvlederlag (2) av N-type, et halvlederområde (3) av P-type valgbart dannet i et midtparti av en overflate av halvlederlaget, et skål-lignende utformet P/N-sjikt som befinner mellom disse, en ringformet elektrode (5) dannet på P-type-området og en elektrode (7) dannet på den annen side av halvlederlaget av N-type. På halvlederlaget av N-type er et dielektrisk lag (6) avleiret for å hindre lys fra å nå frem til halvlederlaget, ved at det reflekteres av et flerlags dielektrikum bestående av to forskjellige media med virksom tykkelse som. • er lik en fjerdedel av lysets bølgelengde.
NO91914401A 1990-11-13 1991-11-11 Fotodetektor NO914401L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2308094A JPH04179278A (ja) 1990-11-13 1990-11-13 受光素子

Publications (2)

Publication Number Publication Date
NO914401D0 NO914401D0 (no) 1991-11-11
NO914401L true NO914401L (no) 1992-05-14

Family

ID=17976795

Family Applications (1)

Application Number Title Priority Date Filing Date
NO91914401A NO914401L (no) 1990-11-13 1991-11-11 Fotodetektor

Country Status (5)

Country Link
US (1) US5214276A (no)
EP (1) EP0487209A1 (no)
JP (1) JPH04179278A (no)
CA (1) CA2054566A1 (no)
NO (1) NO914401L (no)

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JP3242495B2 (ja) * 1993-07-01 2001-12-25 シャープ株式会社 多層膜フィルタ付き受光素子及びその製造方法
DE4408155C2 (de) * 1994-03-11 2001-12-06 Balzers Ag Liechtenstein Flüssigkristallanzeige
EP0773591A3 (en) * 1995-11-13 1998-09-16 Sumitomo Electric Industries, Ltd. Light emitting/detecting module
US5790296A (en) * 1996-08-20 1998-08-04 Sipe; John Edward Method and apparatus for controlling propagation of electrical charges using multiple coherent light beams
DE19830179B4 (de) * 1998-07-06 2009-01-08 Institut für Mikroelektronik Stuttgart Stiftung des öffentlichen Rechts MOS-Transistor für eine Bildzelle
AU2996400A (en) * 1999-03-01 2000-09-21 Sensors Unlimited Inc. Doped structures for improved ingaas performance in imaging devices
US6437425B1 (en) * 2000-01-18 2002-08-20 Agere Systems Guardian Corp Semiconductor devices which utilize low K dielectrics
US6489659B2 (en) * 2000-04-20 2002-12-03 Agere Systems Inc. Non-hermetic APD
US6753580B1 (en) * 2000-05-05 2004-06-22 International Rectifier Corporation Diode with weak anode
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
US6815790B2 (en) * 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
JP3928723B2 (ja) * 2003-02-10 2007-06-13 セイコーエプソン株式会社 光素子と光ファイバとの結合構造、光素子と光ファイバとの結合方法、ならびに光モジュール
DE10318667B4 (de) * 2003-04-24 2009-05-20 Infineon Technologies Ag Optoelektronisches Bauteil mit einem Teildurchlässigen Spiegel und Verfahren zu seinem Betrieb
US8766392B2 (en) * 2007-05-07 2014-07-01 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7655999B2 (en) * 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US8164151B2 (en) * 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US7242069B2 (en) * 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8519503B2 (en) * 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7880258B2 (en) * 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7256470B2 (en) * 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7279731B1 (en) 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
CN100423231C (zh) * 2005-12-02 2008-10-01 中国科学院上海微系统与信息技术研究所 一种制备相变存储器纳米加热电极的方法
JP4502996B2 (ja) * 2006-10-30 2010-07-14 日本テキサス・インスツルメンツ株式会社 フォトダイオード
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
CN100541146C (zh) * 2007-04-25 2009-09-16 中国科学院上海技术物理研究所 防非红外辐射入射面响应的碲镉汞红外探测器芯片
US20100053802A1 (en) * 2008-08-27 2010-03-04 Masaki Yamashita Low Power Disk-Drive Motor Driver
JP5498399B2 (ja) 2008-02-12 2014-05-21 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 色検出器
WO2009102328A1 (en) 2008-02-13 2009-08-20 Hewlett-Packard Development Company, L.P. Color detector having area scaled photodetectors
US8022452B2 (en) * 2008-12-12 2011-09-20 Omnivision Technologies, Inc. Elimination of glowing artifact in digital images captured by an image sensor
US8399909B2 (en) * 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8598673B2 (en) * 2010-08-23 2013-12-03 Discovery Semiconductors, Inc. Low-noise large-area photoreceivers with low capacitance photodiodes
CN103050565B (zh) * 2012-12-26 2016-05-04 华工科技产业股份有限公司 突发式光模块用浅沟栅状背光探测器及其制作方法
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US9876127B2 (en) 2013-11-22 2018-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Backside-illuminated photodetector structure and method of making the same

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US3579130A (en) * 1969-07-18 1971-05-18 Vern N Smiley Thin film active interference filter
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
DE2637616A1 (de) * 1976-08-20 1978-02-23 Siemens Ag Filter fuer fotodetektoren
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JPS63227056A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd イメ−ジセンサ
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WO1990009038A1 (en) * 1989-02-03 1990-08-09 British Telecommunications Public Limited Company Optical detector

Also Published As

Publication number Publication date
EP0487209A1 (en) 1992-05-27
CA2054566A1 (en) 1992-05-14
NO914401D0 (no) 1991-11-11
US5214276A (en) 1993-05-25
JPH04179278A (ja) 1992-06-25

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