NO994080L - Anordning og fremgangsmaate til forbedring av vakuum i et system med meget höy vakuum - Google Patents
Anordning og fremgangsmaate til forbedring av vakuum i et system med meget höy vakuumInfo
- Publication number
- NO994080L NO994080L NO994080A NO994080A NO994080L NO 994080 L NO994080 L NO 994080L NO 994080 A NO994080 A NO 994080A NO 994080 A NO994080 A NO 994080A NO 994080 L NO994080 L NO 994080L
- Authority
- NO
- Norway
- Prior art keywords
- vacuum
- chamber
- improving
- undercoat
- high vacuum
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
- H01J7/183—Composition or manufacture of getters
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Catalysts (AREA)
- Physical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Jet Pumps And Other Pumps (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Furnace Details (AREA)
- Laminated Bodies (AREA)
- Hooks, Suction Cups, And Attachment By Adhesive Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9702305A FR2760089B1 (fr) | 1997-02-26 | 1997-02-26 | Agencement et procede pour ameliorer le vide dans un systeme a vide tres pousse |
| PCT/EP1998/000978 WO1998037958A1 (fr) | 1997-02-26 | 1998-02-20 | Agencement et procede pour ameliorer le vide dans un systeme a vide tres pousse |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO994080D0 NO994080D0 (no) | 1999-08-24 |
| NO994080L true NO994080L (no) | 1999-08-24 |
| NO317574B1 NO317574B1 (no) | 2004-11-15 |
Family
ID=9504208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO19994080A NO317574B1 (no) | 1997-02-26 | 1999-08-24 | Fremgangsmate for paforing av belegg med getterfunksjon tilpasset for dannelse av meget hoyt vakuum. |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US6554970B1 (no) |
| EP (1) | EP0964741B1 (no) |
| JP (1) | JP4451498B2 (no) |
| AT (1) | ATE248645T1 (no) |
| AU (1) | AU6722898A (no) |
| CA (1) | CA2282664C (no) |
| DE (1) | DE69817775T2 (no) |
| DK (1) | DK0964741T3 (no) |
| ES (1) | ES2206905T3 (no) |
| FR (1) | FR2760089B1 (no) |
| NO (1) | NO317574B1 (no) |
| PT (1) | PT964741E (no) |
| RU (1) | RU2192302C2 (no) |
| WO (1) | WO1998037958A1 (no) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU5102600A (en) * | 1999-06-02 | 2000-12-28 | Saes Getters S.P.A. | Composite materials capable of hydrogen sorption independently from activating treatments and methods for the production thereof |
| IT1318937B1 (it) * | 2000-09-27 | 2003-09-19 | Getters Spa | Metodo per la produzione di dispositivi getter porosi con ridottaperdita di particelle e dispositivi cosi' prodotti |
| US7315115B1 (en) | 2000-10-27 | 2008-01-01 | Canon Kabushiki Kaisha | Light-emitting and electron-emitting devices having getter regions |
| DE10209423A1 (de) * | 2002-03-05 | 2003-09-18 | Schwerionenforsch Gmbh | Beschichtung aus einer Gettermetall-Legierung sowie Anordnung und Verfahren zur Herstellung derselben |
| ITMI20031178A1 (it) * | 2003-06-11 | 2004-12-12 | Getters Spa | Depositi multistrato getter non evaporabili ottenuti per |
| CN101163586A (zh) * | 2005-02-17 | 2008-04-16 | 泽斯吸气剂公司 | 柔性多层吸气器 |
| DE102005042809B4 (de) * | 2005-09-08 | 2008-12-11 | Geoforschungszentrum Potsdam | Aktive Messeinrichtung, insbesondere Sekundärionen-Massenspektrometer |
| GB0523838D0 (en) * | 2005-11-23 | 2006-01-04 | Oxford Instr Analytical Ltd | X-Ray detector and method |
| JP4794514B2 (ja) * | 2007-07-11 | 2011-10-19 | 昭和電工株式会社 | 磁気記録媒体の製造方法および製造装置 |
| JP4820783B2 (ja) * | 2007-07-11 | 2011-11-24 | 昭和電工株式会社 | 磁気記録媒体の製造方法および製造装置 |
| EP2071188A1 (en) | 2007-12-10 | 2009-06-17 | VARIAN S.p.A. | Device for the deposition of non-evaporable getters (NEGs) and method of deposition using said device |
| RU2555283C2 (ru) * | 2013-10-18 | 2015-07-10 | Общество с Ограниченной Ответственностью "Мембраны-НЦ" | Способ нанесения палладиевого покрытия на подложку |
| KR102154893B1 (ko) | 2014-06-26 | 2020-09-11 | 사에스 게터스 에스.페.아. | 게터 펌핑 시스템 |
| DE102016123146A1 (de) | 2016-06-03 | 2017-12-07 | Movatec Gmbh | Vakuumgerät und Verfahren zur Beschichtung von Bauteilen |
| JP6916537B2 (ja) | 2016-11-28 | 2021-08-11 | 大学共同利用機関法人 高エネルギー加速器研究機構 | 非蒸発型ゲッタコーティング部品、容器、製法、装置 |
| CN119767508B (zh) * | 2025-01-02 | 2026-01-13 | 中子科学(重庆)研究院有限公司 | 吸气薄壁件及制备方法、真空室组件及真空调控方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3630690A (en) * | 1969-04-21 | 1971-12-28 | Gen Electric | Hydrogen-pumping apparatus of laminated construction |
| US4000335A (en) * | 1974-09-20 | 1976-12-28 | The United States Of America As Represented By The Secretary Of The Army | Method of making photocathodes |
| JPS5832229B2 (ja) * | 1978-09-22 | 1983-07-12 | 日本真空技術株式会社 | 金属窒化物を被覆した真空容器及び真空機器用部品 |
| DE3225751C1 (de) * | 1982-07-09 | 1984-01-26 | Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe | Vorrichtung zum Abtrennen der gasfoermigen Wasserstoffisotope |
| JPH01242134A (ja) * | 1988-03-23 | 1989-09-27 | Hitachi Ltd | 真空排気装置 |
| SU1644996A1 (ru) * | 1989-04-21 | 1991-04-30 | Ю. А Истомин и В Ю Истомин | Способ получени алмазов |
| JP2895554B2 (ja) * | 1990-02-22 | 1999-05-24 | 日本真空技術株式会社 | 多層被膜を有する真空容器及び真空機器用部品 |
-
1997
- 1997-02-26 FR FR9702305A patent/FR2760089B1/fr not_active Expired - Lifetime
-
1998
- 1998-02-20 JP JP53727298A patent/JP4451498B2/ja not_active Expired - Lifetime
- 1998-02-20 AU AU67228/98A patent/AU6722898A/en not_active Abandoned
- 1998-02-20 RU RU99120179/12A patent/RU2192302C2/ru active
- 1998-02-20 EP EP98912350A patent/EP0964741B1/fr not_active Expired - Lifetime
- 1998-02-20 DK DK98912350T patent/DK0964741T3/da active
- 1998-02-20 ES ES98912350T patent/ES2206905T3/es not_active Expired - Lifetime
- 1998-02-20 PT PT98912350T patent/PT964741E/pt unknown
- 1998-02-20 DE DE69817775T patent/DE69817775T2/de not_active Expired - Lifetime
- 1998-02-20 US US09/367,930 patent/US6554970B1/en not_active Expired - Lifetime
- 1998-02-20 WO PCT/EP1998/000978 patent/WO1998037958A1/fr not_active Ceased
- 1998-02-20 CA CA2282664A patent/CA2282664C/fr not_active Expired - Lifetime
- 1998-02-20 AT AT98912350T patent/ATE248645T1/de active
-
1999
- 1999-08-24 NO NO19994080A patent/NO317574B1/no not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NO317574B1 (no) | 2004-11-15 |
| PT964741E (pt) | 2004-01-30 |
| CA2282664C (fr) | 2010-08-24 |
| NO994080D0 (no) | 1999-08-24 |
| FR2760089B1 (fr) | 1999-04-30 |
| JP2001513017A (ja) | 2001-08-28 |
| DK0964741T3 (da) | 2004-01-12 |
| ATE248645T1 (de) | 2003-09-15 |
| US6554970B1 (en) | 2003-04-29 |
| EP0964741A1 (fr) | 1999-12-22 |
| FR2760089A1 (fr) | 1998-08-28 |
| DE69817775T2 (de) | 2004-07-15 |
| ES2206905T3 (es) | 2004-05-16 |
| CA2282664A1 (fr) | 1998-09-03 |
| RU2192302C2 (ru) | 2002-11-10 |
| WO1998037958A1 (fr) | 1998-09-03 |
| EP0964741B1 (fr) | 2003-09-03 |
| JP4451498B2 (ja) | 2010-04-14 |
| DE69817775D1 (de) | 2003-10-09 |
| AU6722898A (en) | 1998-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO994080D0 (no) | Anordning og fremgangsmåte til forbedring av vakuum i et system med meget höy vakuum | |
| DE69719507D1 (de) | Verfahren zur anwendung eines nicht verdampfbaren getters | |
| TW360925B (en) | Surface treatment device | |
| NO961739L (no) | Fremgangsmåte til fremstilling av tynne metallmembraner | |
| EA200401344A1 (ru) | Система для формирования плазмы при атмосферном давлении | |
| TW360907B (en) | Chamber for constructing a film on a semiconductor wafer | |
| CA2051556A1 (en) | Gas sensor | |
| EP1801898A3 (en) | Integrated circuit device and fabrication using metal-doped chalcogenide materials | |
| AU638288B2 (en) | Plasma display panel and method of manufacturing the same | |
| WO2001088966A3 (en) | Method of adjusting the thickness of an electrode in a plasma processing system | |
| AR028638A1 (es) | Electrodo de difusion de gas estable dimensionalmente y procedimiento para obtenerlo | |
| KR970003543A (ko) | 텅스텐 증착용 개선된 접착층 | |
| NO940416D0 (no) | Fremgangsmaate for tetning av en kanal | |
| RU99120179A (ru) | Устройство и способ получения повышенного вакуума в системе со сверхвысоким вакуумом | |
| CA2345801A1 (en) | Instrument for combustible gas detection | |
| TW367543B (en) | Reactive PVD with NEG pump | |
| ATE345404T1 (de) | Verfahren zum abscheiden von schichtsystemen | |
| TW266335B (en) | Preparation of electrode | |
| MY108081A (en) | Anode for chromium plating and processes for producing and using the same. | |
| EP2071188A1 (en) | Device for the deposition of non-evaporable getters (NEGs) and method of deposition using said device | |
| EP0615273A1 (en) | Method and apparatus for detection of sputtering target erosion | |
| KR920012535A (ko) | 다이아몬드의 화학 증착 방법에 사용되는 금속 성장 가속기 쉘 | |
| EP1059657A3 (en) | Isotopic reference material | |
| FR2858776B1 (fr) | Procede d'assemblage d'une membrane d'extraction sur un support | |
| WO1999019049A3 (en) | Semiconductor manufacturing system with getter safety device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK1K | Patent expired |